FAIRCHILD NDB4050

July 1996
NDP4050 / NDB4050
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
15A, 50V. RDS(ON) = 0.10Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
____________________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
Parameter
NDP4050
VDSS
Drain-Source Voltage
50
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
50
V
VGSS
Gate-Source Voltage - Continuous
± 20
V
ID
Drain Current - Continuous
- Nonrepetitive (tP < 50 µs)
- Pulsed
PD
Total Power Dissipation
Derate above 25°C
TJ,TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDB4050
Units
± 40
± 15
A
± 45
50
W
0.33
W/°C
-65 to 175
°C
275
°C
NDP4050 Rev. B
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
40
mJ
15
A
250
µA
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
IAR
Maximum Drain-Source Avalanche Current
VDD = 25 V, ID = 15 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 50 V, VGS = 0 V
50
V
1
mA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100
nA
V
TJ = 125°C
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
2
3
4
1.4
2.4
3.6
VGS = 10 V, ID = 7.5 A
TJ = 125°C
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
15
gFS
Forward Transconductance
VDS = 10 V, ID = 7.5 A
3
Ω
0.078
0.1
0.12
0.165
A
5.7
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25, VGS = 0 V,
f = 1.0 MHz
370
450
pF
165
200
pF
50
100
pF
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
tf
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 15 A
VGS = 10 V, RGEN = 25 Ω
8
20
ns
70
100
ns
Turn - Off Delay Time
18
30
ns
Turn - Off Fall Time
37
50
ns
12.7
17
nC
VDS = 48 V
ID = 15 A, VGS = 10 V
3.2
nC
7
nC
NDP4050 Rev. B
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuos Drain-Source Diode Forward Current
15
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
45
A
VSD
Source-Drain Diode Forward Voltage
0.95
1.3
V
0.88
1.2
25
46
100
ns
1.5
3.4
7
A
3
°C/W
62.5
°C/W
VGS = 0 V, IS = 7.5 A
(Note 1)
TJ = 125°C
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = 15 A,
dIF/dt = 100 A/µs
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP4050 Rev. B
Typical Electrical Characteristics
2
12
10
25
9.0
8.0
R DS(on) , NORMALIZED
I D , DRAIN-SOURCE CURRENT (A)
V GS = 2 0 V
20
7.0
15
10
6.0
5
5.0
DRAIN-SOURCE ON-RESISTANCE
30
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
8.0
1.4
9.0
10
1.2
1
12
20
0.8
0
5
5
10
15
20
I D , DRAIN CURRENT (A)
30
3
2.2
RDS(on) , NORMALIZED
VGS = 10 V
1.8
1.6
1.4
1.2
1
0.8
DRAIN-SOURCE ON-RESISTANCE
I D = 7.5 A
2
0.6
-50
VGS = 10 V
2.5
TJ = 125°C
2
1.5
25°C
1
-55°C
0.5
-25
0
25
50
75
100
125
150
175
0
5
10
15
20
ID , DRAIN CURRENT (A)
T J, JUNCTION TEMPERATURE (°C)
25
30
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
1.2
V DS = 1 0 V
T = -55°C
J
25°C
125°C
V th , NORMALIZED
15
10
5
0
2
4
6
8
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Drain Current Variation with Gate
Voltage and Temperature.
10
GATE-SOURCE THRESHOLD VOLTAGE
20
ID , DRAIN CURRENT (A)
25
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 1. On-Region Characteristics.
R DS(ON), NORMALIZED
7.0
1.6
0.6
0
DRAIN-SOURCE ON-RESISTANCE
VGS = 6.0V
1.8
VDS = VGS
1.1
I D = 250µA
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
T J , JUNCTION TEMPERATURE (°C)
150
175
Figure 6. Gate Threshold Variation with
Temperature.
NDP4050 Rev. B
Typical Electrical Characteristics (continued)
20
VGS = 0V
I D = 250µA
IS , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.15
1.1
1.05
1
0.95
0.9
-50
-25
0
25
50
75
100
125
T J , JUNCTION TEMPERATURE (°C)
150
175
10
5
25°C
2
-55°C
1
0.5
0.2
0.1
0.4
0.6
0.8
1
1.2
1.4
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
700
20
500
I D = 15A
, GATE-SOURCE VOLTAGE (V)
C iss
300
200
C oss
100
V GS = 0V
C rss
30
1
2
3
5
10
20
30
24V
48V
10
5
GS
f = 1 MHz
50
V DS = 12V
15
V
CAPACITANCE (pF)
T J = 125°C
0
60
0
5
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
t on
t d(on)
VGS
R GEN
t off
tr
RL
t d(off)
tf
90%
90%
V OUT
D
VOUT
10%
10%
INVERTED
DUT
G
20
Figure 10. Gate Charge Characteristics.
VDD
V IN
15
Q g , GATE CHARGE (nC)
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP4050 Rev. B
Typical Electrical Characteristics (continued)
70
V DS = 1 5 V
10
50
TJ = -55°C
25°C
6
R
I D , DRAIN CURRENT (A)
20
125°C
4
2
(
DS
)
ON
LIM
IT
1m
10
10
50
DC
V GS = 20V
0u
s
s
ms
ms
SINGLE PULSE
2
R θJC = 3 o C/W
1
T C = 25°C
g
FS
, TRANSCONDUCTANCE (SIEMENS)
8
0
0
2
4
6
8
10
0.5
1
2
I D , DRAIN CURRENT (A)
5
10
30
50
70
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with
Drain Current and Temperature.
Figure 14. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.3
R θJC (t) = r(t) * RθJC
R
θJC = 3.0 °C/W
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
t1
0.02
0.03
0.02
Duty Cycle, D = t1 /t2
Single Pulse
0.01
0.01
t2
TJ - TC = P * R θJC (t)
0.01
0.05
0.1
0.5
1
5
t1 , TIME (ms)
10
50
100
500
1000
Figure 15. Transient Thermal Response Curve.
NDP4050 Rev. B