May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted NDP410A NDP410AE NDB410A NDB410AE Symbol Parameter NDP410B NDP410BE NDB410B NDB410BE Units VDSS Drain-Source Voltage 100 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 100 V VGSS Gate-Source Voltage - Continuous ±20 V - Nonrepetitive (tP < 50 µs) ±40 V ID Drain Current - Continuous - Pulsed PD Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation 9 8 A 36 32 A 50 W 0.33 W/°C -65 to 175 °C 275 °C NDP410.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units 50 mJ 9 A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) EAS Single Pulse Drain-Source Avalanche Energy VDD = 25 V, ID = 9 A IAR Maximum Drain-Source Avalanche Current NDP410AE NDP410BE NDB410AE NDB410BE OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ALL IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V ALL IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse 100 V 250 µA 1 mA ALL 100 nA VGS = -20 V, VDS = 0 V ALL -100 nA VDS = VGS, ID = 250 µA ALL TJ = 125°C ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance TJ = 125°C VGS = 10 V, ID = 4.5 A TJ = 125°C NDP410A NDP410AE NDB410A NDB410AE TJ = 125°C NDP410B NDP410BE NDB410B NDB410BE VGS = 10 V, ID = 4 A ID(on) gFS On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 10 V 2 2.9 4 V 1.4 2.3 3.6 V 0.2 0.25 Ω 0.38 0.5 Ω 0.3 Ω 0.6 Ω NDP410A NDP410AE NDB410A NDB410AE 9 A NDP410B NDP410BE NDB410B NDB410BE 8 A VDS = 10 V, ID = 4.5 A ALL 3 VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL 385 500 pF ALL 80 100 pF ALL 20 30 pF 4.8 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance NDP410.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units ALL 7.5 20 nS ALL 29 50 nS SWITCHING CHARACTERISTICS (Note 2) tD(ON) Turn - On Delay Time tr Turn - On Rise Time VDD = 50 V, ID = 9 A, VGS = 10 V, RGEN = 24 Ω tD(OFF) Turn - Off Delay Time ALL 26 45 nS tf Turn - Off Fall Time ALL 24 45 nS Qg Total Gate Charge ALL 11.6 17 nC Qgs Gate-Source Charge ALL 2.3 nC Qgd Gate-Drain Charge ALL 5 nC VDS = 80 V, ID = 9 A, VGS = 10V DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IS = 9 A, dIS/dt = 100 A/µs (Note 2) NDP410A NDP410AE NDB410A NDB410AE 9 A NDP410B NDP410BE NDB410B NDB410BE 8 A NDP410A NDP410AE NDB410A NDB410AE 36 A NDP410B NDP410BE NDB410B NDB410BE 32 A ALL 0.87 1.3 V 0.75 1.2 V ALL 85 120 ns ALL 6 9 A TJ = 125°C THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case ALL 3 °C/W RθJA Thermal Resistance, Junction-to-Ambient ALL 62.5 °C/W Notes: 1. NDP410A/410B and NDB410A/410B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP410.SAM Typical Electrical Characteristics 2 V GS = 20V 1 21 0 V 8.0 7.0 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 16 12 6.0 8 5.0 4 0 0 2 4 6 VDS , DRAIN-SOURCE VOLTAGE (V) 8.0 10 12 20 1.4 1.2 1 0 V 12 16 2 1.6 1.2 0.8 -25 0 = 10V GS GS = 10V R DS(on), NORMALIZED V 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 ID , DRAIN CURRENT (A) 2.5 I D = 4.5A T = 125°C J 2 1.5 25°C 1 -55°C 0.5 0 175 0 Figure 3. On-Resistance Variation with Temperature. 4 8 I D , DRAIN CURRENT (A) 12 16 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.2 10 J = -55°C 25 125 V th , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE (V) T V DS = 10V 8 I D, DRAIN CURRENT (A) 4 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.8 0.4 -50 6.0 7.0 Figure 1. On-Region Characteristics. 2.4 = 5V 1.6 0.8 8 GS 1.8 6 4 2 0 2 3 4 V GS 5 6 7 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 8 V DS = V GS I D = 250µA 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 175 J Figure 6. Gate Threshold Variation with Temperature. NDP410.SAM Typical Electrical Characteristics (continued) 15 10 I D = 250µA I S , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.06 1.04 1.02 1 0.98 0.96 -50 -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 V GS = 0V TJ = 125°C 25°C 1 -55°C 0.1 0.01 0.2 175 Figure 7. Breakdown Voltage Variation with Temperature. 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 20 1000 I D = 9A CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) C iss 500 200 C oss 100 50 20 10 0.1 C rss f = 1 MHz VGS = 0V V DS = 20V 50 80 15 10 5 0 0.2 0.5 1 2 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 50 Figure 9. Capacitance Characteristics. 0 5 t on t d(on) V OUT R GEN tf 90% Output, Vout 10% 10% 90% DUT G Input, Vin S Figure 11. Switching Test Circuit. 20 t d(off) 90% D 15 t off tr RL V IN 10 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. VDD VGS 1.4 Inverted 50% 50% 10% Pulse Width Figure 12. Switching Waveforms. NDP410.SAM Typical Electrical Characteristics (continued) 8 , TRANSCONDUCTANCE (SIEMENS) V = 10V DS VGS = 10V T J = -55°C 6 L tp VDD - 25°C t p is adjusted to reach the desired peak inductive current, I L . tp 125°C 4 + BV DSS 2 VDD g FS IL 0 0 2 4 6 , DRAIN CURRENT (A) I D 8 10 Figure 13. Transconductance Variation with Drain Current and Temperature. I D , DRAIN CURRENT (A) 50 10 RD 10 S( ON ) Lim µs it 10 1m 5 10 DC V GS = 20V 2 Figure 14. Unclamped Inductive Load Circuit and Waveforms. 0µ s s ms SINGLE PULSE T C = 25°C 1 0.5 1 2 3 5 10 20 50 VDS , DRAIN-SOURCE VOLTAGE (V) 100 150 Figure 15. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R = 3.0 °C/W θJC 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.02 t1 0.01 0.03 0.02 0.01 0.01 Single Pulse 0.02 t2 TJ - T C = P * R θJC (t) Duty Cycle, D = t1 /t2 0.05 0.1 0.2 0.5 1 2 5 t 1 ,TIME (ms) 10 20 50 100 200 500 1000 Figure 16. Transient Thermal Response Curve. NDP410.SAM