FAIRCHILD NDB6050L

April 1996
NDP6050L / NDB6050L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
48A, 50V. RDS(ON) = 0.025Ω @ VGS = 5V.
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
T C = 25°C unless otherwise noted
NDP6050L
NDB6050L
Units
VDSS
Drain-Source Voltage
50
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
50
V
VGSS
Gate-Source Voltage - Continuous
± 16
V
- Nonrepetitive (tP < 50 µs)
ID
Drain Current
± 25
- Continuous
48
- Pulsed
144
PD
Total Power Dissipation @ TC = 25°C
TJ,TSTG
Operating and Storage Temperature
TL
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
Derate above 25°C
© 1997 Fairchild Semiconductor Corporation
A
100
W
0.67
W/°C
-65 to 175
°C
275
°C
NDP6050L Rev. C / NDB6050L Rev. D
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
200
mJ
48
A
250
µA
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 25 V, ID = 48 A
IAR
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 50 V, VGS = 0 V
50
V
1
mA
IGSSF
Gate - Body Leakage, Forward
VGS = 16 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -16 V, VDS = 0 V
-100
nA
1
2
V
0.65
1.5
TJ = 125°C
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS = 5 V, ID = 24 A
0.025
Ω
0.04
TJ = 125°C
0.02
VGS = 10 V, ID = 24 A
ID(on)
On-State Drain Current
VGS = 5 V, VDS = 10 V
48
A
gFS
Forward Transconductance
VDS = 10 V, ID = 24 A
10
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1630
2000
pF
460
800
pF
150
400
pF
15
30
nS
320
500
nS
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 48 A,
VGS = 5 V, RGEN = 15 Ω,
RGS = 15 Ω
VDS = 48 V,
ID = 48 A, VGS = 5 V
49
100
nS
161
300
nS
36
60
nC
8.2
nC
21
nC
NDP6050L Rev. C / NDB6050L Rev. D
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
48
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
144
A
VSD
Drain-Source Diode Forward Voltage
1.3
V
VGS = 0 V, IS = 24 A (Note 1)
1.2
TJ = 125°C
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = 48 A,
dIF/dt = 100 A/µs
35
75
140
ns
2
3.6
8
A
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
1.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6050L Rev. C / NDB6050L Rev. D
Typical Electrical Characteristics
100
2
V
6.0
GS
5.0
80
60
R DS(on) , NORMALIZED
4.5
4.0
40
3.5
3.0
20
2.5
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
VGS = 10V
0
1
2
3
VDS , DRAIN-SOURCE VOLTAGE (V)
4
4.5
5.0
5.5
6.0
1
10
0
20
40
I
D
60
80
100
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
2
VGS = 5.0V
V GS = 5V
R DS(on), NORMALIZED
1.75
1.5
1.25
1
0.75
0.5
-50
-25
0
25
50
75
100
125
T J , JUNCTION TEMPERATURE (°C)
150
DRAIN-SOURCE ON-RESISTANCE
R DS(ON), NORMALIZED
4.0
1 .5
5
I D = 24A
DRAIN-SOURCE ON-RESISTANCE
3.5
0 .5
0
1.8
TJ = 125°C
1.6
1.4
25°C
1.2
1
-55°C
0.8
0.6
175
0
20
40
60
80
100
I D , DRAIN CURRENT (A)
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
T = -55°C
J
VDS = 10V
50
25°C
V GS(th) , NORMALIZED
125°C
40
30
20
10
0
1
2
3
4
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
GATE-SOURCE THRESHOLD VOLTAGE
60
I D , DRAIN CURRENT (A)
= 3.0V
VDS = VGS
1.2
I D = 250µA
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
TJ , JUNCTION TEMPERATURE (°C)
150
175
Figure 6. Gate Threshold Variation with
Temperature
NDP6050L Rev. C / NDB6050L Rev. D
Typical Electrical Characteristics (continued)
80
I D = 250µA
1.1
1.05
1
0.95
0.9
-50
10
IS , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.15
-25
0
25
50
75
100
125
TJ , JUNCTION TEMPERATURE (°C)
150
25°C
1
-55°C
0.1
0.01
0.001
V GS = 0V
0.0001
0.2
175
Figure 7. Breakdown Voltage Variation with
Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
V SD , BODY DIODE FORWARD VOLTAGE (V)
10
3000
V DS = 12V
I D = 48A
V GS, GATE-SOURCE VOLTAGE (V)
Ciss
2000
1000
Coss
500
300
f = 1 MHz
V GS = 0 V
200
Crss
100
48V
8
24V
6
4
2
0
1
2
3
V
DS
5
10
20
30
50
0
20
, DRAIN TO SOURCE VOLTAGE (V)
V DD
t on
t d(on)
R GEN
R GS
t d(off)
tf
VOUT
VO U T
10%
10%
INVERTED
DUT
G
80
90%
90%
D
60
to f f
tr
RL
VIN
40
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics
Figure 9. Capacitance Characteristics
VGEN
1.8
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
4000
CAPACITANCE (pF)
TJ = 125°C
90%
S
V IN
50%
50%
10%
PULSE W IDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDP6050L Rev. C / NDB6050L Rev. D
Typical Electrical Characteristics (continued)
300
40
200
100
I D , DRAIN CURRENT (A)
25°C
30
125°C
20
10
RD
S(
O
Lim
N)
10
it
10
0µ
µs
s
50
1m
20
10
10
10
SINGLE PULSE
5
s
ms
0m
s
DC
VGS = 5V
RθJC = 1.5 o C/W
T C = 25°C
2
V DS =10V
g
FS
, TRANSCONDUCTANCE (SIEMENS)
T J = -55°C
1
0
0
10
20
ID , DRAIN CURRENT (A)
30
40
1
2
3
5
10
20
30
50
100
V DS , DRAIN-SOURCE VOLTAGE (V))
Figure 13. Transconductance Variation with Drain
Current and Temperature
Figure 14. Maximum Safe Operating Area
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.5
0.3
R θJC (t) = r(t) * RθJC
R
θJC = 1.5 °C/W
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
0.03
t1
0.02
0.01
0.02
0.01
0.01
0.02
0.05
t2
TJ - T C = P * R θ
JC (t)
Duty Cycle, D = t 1 /t2
Single Pulse
0.1
0.2
0.5
1
2
5
t1 ,TIME (m s)
10
20
50
100
200
500
1000
Figure 15. Transient Thermal Response Curve
NDP6050L Rev. C / NDB6050L Rev. D