KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W (Ta=25°C) Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 60 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage - 60 V -7 IC Collector Current (DC) -5 V A ICP *Collector Current (Pulse) -8 A IB Base Current -1 A PC Collector Dissipation (Ta=25°C) 1.3 W Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = - 50V, IE = 0 IEBO Emitter Cut-off Current VEB = - 7V, IC = 0 hFE1 hFE2 hFE3 * DC Current Gain VCE = - 1V, IC = - 0.1A VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A Min. 60 100 50 Typ. 200 Max. - 10 Units µA - 10 µA 400 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.14 - 0.3 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.9 - 1.2 V VCC = - 10V, IC = - 2A IB1 = - IB2 =0.2A RL = 5Ω 0.15 1 µs 0.78 2.5 µs 0.18 1 µs tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification O Y G hFE2 100 ~ 200 160 ~ 320 200 ~ 400 ©2003 Fairchild Semiconductor Corporation Rev. B, May 2003 KSB1151 Typical Characteristics -1000 IB = -200 mA IB = -15 0m A -8 V CE = -2V 00mA I B = -1 IB = -80mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -10 IB = -60mA 0mA I B = -4 -6 A I B = -30m IB = -20mA -4 IB = -10mA -2 IB = 0 -0 -0.4 -0.8 -1.2 -100 V CE = -1V -10 -1 -0.01 -1.6 -0.1 -10 IC [A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain -10 -10 IC = 10 IB VCEO(MAX) ) (s at C E V -1 d ite m Li -0.1 -1 b s/ -0.01 d ite m Li -0.1 S V BE(sat) -1 2m S IC(DC)MAX 0m n 20 atio ip ss Di IC[A], COLLECTOR CURRENT IC(Pulse)MAX S m 10 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 -2.0 -0.1 -10 -1 -10 IC[A], COLLECTOR CURRENT -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Forward Bias Operating Area -10 160 dT[%], Ic DERATING 120 -6 -4 VCEO(SUS) IC[A], COLLECTOR CURRENT 140 -8 -2 100 80 s/b 60 DI 40 LIM ITE D SS IP A TI O 20 -0 N LI M IT ED 0 -20 -40 -60 -80 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Reverse Bias Safe Operating Area ©2003 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 6. Derating Curve of Safe Operating Areas Rev. B, May 2003 KSB1151 Typical Characteristics (Continued) 30 PC[W], POWER DISSIPATION 25 20 15 10 5 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2003 Fairchild Semiconductor Corporation Rev. B, May 2003 KSB1151 Package Dimensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I2