KSC5054 KSC5054 High Speed High Voltage Switching Industrial Use 1 NPN Epitaxial Silicon Transistor I-PAK 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V 400 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IB Base Current IC Collector Current (DC) ICP *Collector Current (Pulse) 1 A PC Collector Dissipation (Ta=25°C) 1 W PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C 7 V 0.25 A 0.5 A * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = 0.3A, IB1 = 0.06A, L = 10mH Min. 400 Max. Units V VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 0.3A, IB1 = -IB2 = 0.06A VBE(off) = -5V, L = 10mH 450 V VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 0.6A, IB1 = 0.2, L = 10mH IB2 = -0.06, VBE(off) = -5V 400 V 10 µA 1 mA ICBO Collector Cut-off Current VCB = 400V, IE = 0 ICER Collector Cut-off Current VCE = 400V, RBE = 51Ω, TC = 125°C IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA ICEX1 ICEX2 Collector Cut-off Current VCE = 400V, VBE (off) = -1.5V VCE = 400V, VBE (off) = -1.5V @ TC = 125°C 10 1 µA mA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.3A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.3A, IB = 0.06A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.3A, IB = 0.06A 1.2 V tON Turn ON Time µs Storage Time 2.5 µs tF Fall Time VCC = 150V, IC = 0.3A IB1 = -IB2 = 0.06A, RL = 500Ω PW = 50µs, Duty Cycle≤2% 1 tSTG 1 µs 20 10 80 * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification R O Y hFE1 20 ~ 40 30 ~ 60 40 ~ 80 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5054 Typical Characteristics 1000 0.5 VCE = 5V 0.4 A IB = 35m mA I B = 30 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT A mA I B = 45m I = 40mA B I B = 50 mA I B = 25 mA I B = 20 mA I B = 15 0.3 mA I B = 10 0.2 A IB = 5m 0.1 1 2 3 4 10 1 0.1 0.0 0 100 5 Figure 1. Static Characteristic 100 1000 Figure 2. DC current Gain 10 10 IC = 5 IB1 = -5 IB2 IC = 5 IB VBE(sat) 1 0.1 tSTG, tF (µs), TIME VCE(sat) tstg 1 VCE(sat) tf 0.01 0.1 1 10 100 ton 0.1 10 1000 IC[mA], COLLECTOR CURRENT 100 1000 IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 10 10 µ Dis sip ati DC 0.1 10 0µ 1m s s on Lim ite d d ite Lim VCEO(sus) MAX. b S/ 0.01 s 1E-3 0.001 0.8 0.6 0.4 0.2 VCEO(SUS) IC(max). (Pulse) 1 IC[A], COLLECTOR CURRENT 1.0 VCEX(SUS) VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT 1 0.0 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 0 100 200 300 400 500 V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Reverse Bias Safe Operating Area Rev. A1, June 2001 KSC5054 Typical Characteristics (Continued) 16 140 14 PC(W), POWER DISSIPATION 160 dT(%), IC DERATING 120 100 80 S/b Di ss ip at ion 60 40 Lim Lim ite d ite d 20 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 o Tc[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0 0 25 50 75 100 125 150 175 200 o Tc[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A1, June 2001 KSC5054 Package Demensions I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 2.30TYP [2.30±0.20] ±0.20 ±0.30 16.10 ±0.20 ±0.30 9.30 0.76 ±0.10 1.80 0.80 MAX0.96 0.50 ±0.10 6.10 ±0.20 (0.50) 0.70 (4.34) ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3