MICROCHIP TC4429CAT

TC4420
TC4429
6A HIGH-SPEED MOSFET DRIVERS
FEATURES
GENERAL DESCRIPTION
■
The TC4420/4429 are 6A (peak), single output MOSFET
drivers. The TC4429 is an inverting driver (pin-compatible
with the TC429), while the TC4420 is a non-inverting driver.
These drivers are fabricated in CMOS for lower power, more
efficient operation versus bipolar drivers.
Both devices have TTL-compatible inputs, which can be
driven as high as VDD + 0.3V or as low as – 5V without upset
or damage to the device. This eliminates the need for
external level shifting circuitry and its associated cost and
size. The output swing is rail-to-rail ensuring better drive
voltage margin, especially during power up/power down
sequencing. Propagational delay time is only 55nsec (typ.)
and the output rise and fall times are only 25nsec (typ.) into
2500pF across the usable power supply range.
Unlike other drivers, the TC4420/4429 are virtually
latch-up proof. They replace three or more discrete components saving PCB area, parts and improving overall system
reliability.
■
■
■
■
■
■
■
■
■
■
■
Latch-Up Protected ............ Will Withstand >1.5A
Reverse Output Current
Logic Input Will Withstand Negative Swing Up
to 5V
ESD Protected ..................................................... 4kV
Matched Rise and Fall Times ...................... 25nsec
High Peak Output Current ......................... 6A Peak
Wide Operating Range .......................... 4.5V to 18V
High Capacitive Load Drive ...................... 10,000pF
Short Delay Time ................................. 55nsec Typ.
Logic High Input, Any Voltage ............. 2.4V to VDD
Low Supply Current With Logic "1" Input ... 450µA
Low Output Impedance .................................... 2.5Ω
Output Voltage Swing to Within 25mV of Ground
or VDD
APPLICATIONS
■
■
■
■
Switch-Mode Power Supplies
Motor Controls
Pulse Transformer Driver
Class D Switching Amplifiers
ORDERING INFORMATION
PIN CONFIGURATIONS
TO-220-5
8-Pin DIP
8-Pin SOIC
VDD
1
8
VDD
VDD
1
8
VDD
INPUT
2
7
OUTPUT
INPUT
2
7
OUTPUT
NC
3
6
OUTPUT
NC
3
6
OUTPUT
GND
4
5
GND
GND
4
5
GND
TC4420
TC4429
INPUT
GND
VDD
GND
OUTPUT
Tab is
Connected
to VDD
TC4420
TC4429
TC4420
TC4429
Temperature
Range
Part No.
Logic
Package
TC4420CAT
TC4420COA
TC4420CPA
TC4420EOA
TC4420EPA
TC4420IJA
TC4420MJA
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
5-Pin TO-220
0°C to +70°C
8-Pin SOIC
0°C to +70°C
8-Pin PDIP
0°C to +70°C
8-Pin SOIC
– 40°C to +85°C
8-Pin PDIP
– 40°C to +85°C
8-Pin CerDIP
–25°C to +85°C
8-Pin CerDIP – 55°C to +125°C
TC4429CAT
TC4429COA
TC4429CPA
TC4429EOA
TC4429EPA
TC4429IJA
TC4429MJA
Inverting
Inverting
Inverting
Inverting
Inverting
Inverting
Inverting
5-Pin TO-220
0°C to +70°C
8-Pin SOIC
0°C to +70°C
8-Pin PDIP
0°C to +70°C
8-Pin SOIC
– 40°C to +85°C
8-Pin PDIP
– 40°C to +85°C
8-Pin CerDIP – 25°C to +85°C
8-Pin CerDIP – 55°C to +125°C
NOTE: Duplicate pins must both be connected for proper operation.
FUNCTIONAL BLOCK DIAGRAM
VDD
500 µA
TC4429
300 mV
OUTPUT
INPUT
TC4420
4.7V
GND
EFFECTIVE
INPUT
C = 38 pF
© 2001 Microchip Technology Inc.
DS21419A
TC4420/9-6 10/18/96
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
Storage Temperature Range ................ – 65°C to +150°C
Operating Temperature (Chip) .............................. +150°C
Operating Temperature Range (Ambient)
C Version ............................................... 0°C to +70°C
I Version ........................................... – 25°C to +85°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ............................................... – 5V to > VDD
Input Current (VIN > VDD) .........................................50mA
Power Dissipation, (TA ≤ 70°C)
PDIP ............................................................... 730mW
SOIC ............................................................... 470mW
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Package Power Dissipation, TC ≤ 25°C
5-Pin TO-220 (With Heat Sink) ......................... 12.5W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
SOIC ............................................................. 4mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedances (To Case)
5-Pin TO-220 RθJ-C ...................................................... 10°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields.
Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions
above those indicated in the operation sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Input
VIH
VIL
VIN (Max)
IIN
Output
VOH
VOL
RO
RO
IPK
IREV
Test Conditions
Min
Typ
Max
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
Input Current
0V ≤ VIN ≤ VDD
2.4
—
–5
– 10
1.8
1.3
—
—
—
0.8
VDD +0.3
10
V
V
V
µA
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
See Figure 1
See Figure 1
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
VDD = 18V (See Figure 5)
Duty Cycle ≤ 2%
t ≤ 300µsec
VDD – 0.025
—
—
—
—
1.5
—
—
2.1
1.5
6
—
—
0.025
2.8
2.5
—
—
V
V
Ω
Ω
A
A
Figure 1, CL = 2500pF
Figure 1, CL = 2500pF
Figure 1
Figure 1
—
—
—
—
25
25
55
55
35
35
75
75
nsec
nsec
nsec
nsec
VIN = 3V
VIN = 0V
—
—
4.5
0.45
55
—
1.5
150
18
mA
µA
V
Switching Time (Note 1)
tR
Rise Time
tF
Fall Time
tD1
Delay Time
tD2
Delay Time
Power Supply
IS
Power Supply Current
VDD
Operating Input Voltage
TC4420/9-6 10/18/96
2
© 2001 Microchip Technology Inc.
Unit
DS21419A
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V ≤ VDD ≤ 18V,
unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Input
VIH
VIL
VIN (Max)
IIN
Output
VOH
VOL
RO
RO
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
Input Current
0V ≤ VIN ≤ VDD
2.4
—
–5
– 10
—
—
—
—
—
0.8
VDD + 0.3
10
V
V
V
µA
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
See Figure 1
See Figure 1
IOUT = 10mA, VDD = 18V
IOUT = 10mA, VDD = 18V
VDD – 0.025
—
—
—
—
—
3
2.3
—
0.025
5
5
V
V
Ω
Ω
Figure 1, CL = 2500pF
Figure 1, CL = 2500pF
Figure 1
Figure 1
—
—
—
—
32
34
50
65
60
60
100
100
nsec
nsec
nsec
nsec
VIN = 3V
VIN = 0V
—
—
4.5
0.45
60
—
3
400
18
mA
µA
V
Switching Time (Note 1)
tR
Rise Time
tF
Fall Time
tD1
Delay Time
tD2
Delay Time
Power Supply
IS
Power Supply Current
VDD
Operating Input Voltage
Unit
NOTE: 1. Switching times guaranteed by design.
VDD = 18V
1µF
1
+5V
8
90%
INPUT
0.1µF
0.1µF
0V
INPUT
2
6
+18V
OUTPUT
4
tD1
tF
tD2
tR
90%
90%
OUTPUT
7
CL = 2500pF
TC4429
10%
0V
10%
10%
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10nsec.
5
Figure 1. Switching Time Test Circuit
© 2001 Microchip Technology Inc.
DS21419A
3
TC4420/9-6 10/18/96
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
Fall Time vs. Supply Voltage
120
80
40
C L = 10,000 pF
60
C L = 4700 pF
40
C L = 2200 pF
7
9
11
13
C L = 4700 pF
40
C L = 2200 pF
20
20
5
C L = 10,000 pF
60
TIME (nsec)
80
TIME (nsec)
TIME (nsec)
50
C L = 2200 pF
VDD = 18V
100
0
Rise and Fall Times vs. Temperature
100
5
7
VDD (V)
9
11
VDD (V)
13
tFALL
tRISE
20
10
0
15
30
0
–60
15
100
100
80
80
60
60
20
60
TA (°C)
100
140
Propagation Delay Time
vs. Supply Voltage
Fall Time vs. Capacitive Load
Rise Time vs. Capacitive Load
–20
65
VDD = 12V
VDD = 18V
40
DELAY TIME (nsec)
VDD = 5V
40
TIME (nsec)
TIME (nsec)
60
VDD = 5V
VDD = 12V
VDD = 18V
20
20
55
tD2
50
45
tD1
40
10
1000
10
1000
10,000
Propagation Delay Time
vs. Temperature
6
84
C L = 2200 pF
VDD = 18V
CL= 2200 pF
tD1
20
10
70
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
tD2
18
1000
VDD = 15V
40
8
10
12 14 16
SUPPLY VOLTAGE (V)
Supply Current vs. Frequency
Supply Current vs. Capacitive Load
50
DELAY TIME (nsec)
4
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
30
35
10,000
56
42
500 kHz
28
200 kHz
18V
10V
100
5V
10
14
20 kHz
0
–60
0
0
–20
TC4420/9-6 10/18/96
20
60
TA (°C)
100
140
0
100
1000
CAPACITIVE LOAD (pF)
4
10,000
0
100
1000
FREQUENCY (kHz)
© 2001 Microchip Technology Inc.
10,000
DS21419A
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
TYPICAL CHARACTERISTICS (Cont.)
Low-State Output Resistance
High-State Output Resistance
2.5
5
100 mA
2
ROUT (Ω )
ROUT (Ω )
4
50 mA
10 mA
100 mA
50 mA
1.5
3
10 mA
2
5
7
9
11
VDD (V)
13
1
15
5
7
Effect of Input Amplitude
on Propagation Delay
9
11
VDD (V)
13
15
Total nA•S Crossover*
200
4
Crossover Area (A•S) x 10
DELAY TIME (nsec)
-9
LOAD = 2200 pF
160
120
INPUT 2.4V
INPUT 3V
80
INPUT 5V
40
INPUT 8V AND 10V
3
2
1
0
0
5
6
7
8
9 10 11 12 13 14 15
VDD (V)
5
6
7 8 9 10 11 12 13 14 15
SUPPLY VOLTAGE (V)
* The values on this graph represent
the loss seen by the driver during
one complete cycle. For a single
transition, divide the value by 2.
© 2001 Microchip Technology Inc.
DS21419A
5
TC4420/9-6 10/18/96
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
PACKAGE DIMENSIONS
PIN 1
8-Pin Plastic DIP
.260 (6.60)
.240 (6.10)
.045 (1.14)
.030 (0.76)
.070 (1.78)
.040 (1.02)
.310 (7.87)
.290 (7.37)
.400 (10.16)
.348 (8.84)
.200 (5.08)
.140 (3.56)
.040 (1.02)
.020 (0.51)
.150 (3.81)
.115 (2.92)
.110 (2.79)
.090 (2.29)
3° MIN.
.400 (10.16)
.310 (7.87)
.022 (0.56)
.015 (0.38)
.110 (2.79)
.090 (2.29)
8-Pin CerDIP
.015 (0.38)
.008 (0.20)
PIN 1
.300 (7.62)
.230 (5.84)
.020 (0.51) MIN.
.055 (1.40) MAX.
.320 (8.13)
.290 (7.37)
.400 (10.16)
.370 (9.40)
.200 (5.08)
.160 (4.06)
.040 (1.02)
.020 (0.51)
.150 (3.81)
MIN.
.200 (5.08)
.125 (3.18)
.015 (0.38)
.008 (0.20)
3° MIN.
.400 (10.16)
.320 (8.13)
.065 (1.65) .020 (0.51)
.045 (1.14) .016 (0.41)
Dimensions: inches (mm)
TC4420/9-6 10/18/96
6
© 2001 Microchip Technology Inc.
DS21419A
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
PACKAGE DIMENSIONS (Cont.)
8-Pin SOIC
.157 (3.99)
.150 (3.81)
.244 (6.20)
.228 (5.79)
.050 (1.27) TYP.
.197 (5.00)
.189 (4.80)
.069 (1.75)
.053 (1.35)
.010 (0.25)
.007 (0.18)
8° MAX.
.020 (0.51) .010 (0.25)
.013 (0.33) .004 (0.10)
.050 (1.27)
.016 (0.40)
.165 (4.19)
5-Pin TO-220
.117 (2.97)
.103 (2.62)
.415 (10.54)
.390 (9.91)
.156 (3.96)
.140 (3.56)
DIA.
.055 (1.40)
.045 (1.14)
.293 (7.44)
.204 (5.18)
.613 (15.57)
.569 (14.45)
3° - 7.5°
5 PLCS.
.037 (0.95)
.025 (0.64)
.590 (14.99)
.482 (12.24)
.025 (0.64)
.012 (0.30)
.072 (1.83)
.062 (1.57)
PIN 1
.115 (2.92)
.087 (2.21)
.273 (6.93)
.263 (6.68)
© 2001 Microchip Technology Inc.
DS21419A
7
Dimensions: inches (mm)
TC4420/9-6 10/18/96
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
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All rights reserved. © 2001 Microchip Technology Incorporated. Printed in the USA. 1/01
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01/09/01
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TC4420/9-6 10/18/96
8
© 2001 Microchip Technology Inc.
DS21419A