MICROCHIP TC4427M

TC4426M/TC4427M/TC4428M
1.5A Dual High-Speed Power MOSFET Drivers
Features
General Description
• High Peak Output Current – 1.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability – 1000 pF
in 25 ns (typ.)
• Short Delay Times – 40 ns (typ.)
• Matched Rise and Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 4 mA
- With Logic ‘0’ Input – 400 µA
• Low Output Impedance – 7Ω
• Latch-Up Protected: Will Withstand 0.5A Reverse
Current
• Input: Will Withstand Negative Inputs Up to 5V
• ESD Protected – 4 kV
• Pin-Compatible with the TC426M/TC427M/
TC428M, TC4426AM/TC4427AM/TC4428AM
Devices
• Wide Operating Temperature Range:
- -55°C to +125°C
• See TC4426/TC4427/TC4428 data sheet
(DS21422) for additional temperature range and
packaging offerings
The TC4426M/TC4427M/TC4428M are improved
versions of the earlier TC426M/TC427M/TC428M
family of MOSFET drivers. The TC4426M/TC4427M/
TC4428M devices have matched rise and fall times
when charging and discharging the gate of a MOSFET.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
500 mA of reverse current (of either polarity) being
forced back into their outputs. All terminals are fully
protected against Electrostatic Discharge (ESD) up to
4 kV.
The TC4426M/TC4427M/TC4428M MOSFET drivers
can
easily
charge/discharge
1000 pF
gate
capacitances in under 30 ns and provide low enough
impedances in both the on and off states to ensure the
MOSFET's intended state will not be affected, even by
large transients.
The TC4426AM/TC4427AM/TC4428AM family of
devices are also compatible drivers. The TC4426AM/
TC4427AM/TC4428AM devices have matched
leading and falling edge input-to-output delay times, in
addition to the matched rise and fall times of the
TC4426M/TC4427M/TC4428M devices.
Applications
Package Types
8-Pin CERDIP TC4426M TC4427M TC4428M
NC 1
IN A 2
GND 3
IN B 4
© 2005 Microchip Technology Inc.
TC4426M
TC4427M
TC4428M
• Switch-mode Power Supplies
• Line Drivers
• Pulse Transformer Drive
8 NC
NC
NC
7 OUT A
OUT A
OUT A
6 VDD
VDD
VDD
5 OUT B
OUT B
OUT B
DS21938A-page 1
TC4426M/TC4427M/TC4428M
Functional Block Diagram
Inverting
VDD
300 mV
Output
Non-Inverting
Input
Effective
Input C = 12 pF
(Each Input)
4.7V
TC4426M/TC4427M/TC4428M(1)
(2)
GND
Note 1: The TC4426M has two inverting drivers; the TC4427M has two non-inverting drivers;
the TC4428M has one inverting and one non-inverting driver.
2: Ground any unused driver input.
DS21938A-page 2
© 2005 Microchip Technology Inc.
TC4426M/TC4427M/TC4428M
1.0
ELECTRICAL
CHARACTERISTICS
† Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B .......... (VDD + 0.3V) to (GND – 5V)
Storage Temperature Range .........................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
-1.0
—
+1.0
µA
0V ≤ VIN ≤ VDD
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC TEST
Low Output Voltage
VOL
—
—
0.025
V
DC TEST
Output Resistance
RO
—
7
10
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
1.5
—
A
VDD = 18V
Latch-Up Protection
Withstand Reverse Current
IREV
—
>0.5
—
A
Duty cycle ≤ 2%, t ≤ 300 µs
VDD = 18V
tR
—
19
30
ns
Figure 4-1
Fall Time
tF
—
25
30
ns
Figure 4-1
Delay Time
tD1
—
20
30
ns
Figure 4-1
Delay Time
tD2
—
40
50
ns
Figure 4-1
IS
—
—
—
—
4.5
0.4
mA
VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Input
Output
Switching Time (Note 1)
Rise Time
Power Supply
Power Supply Current
Note 1:
Switching times ensured by design.
© 2005 Microchip Technology Inc.
DS21938A-page 3
TC4426M/TC4427M/TC4428M
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
-10
—
+10
µA
0V ≤ VIN ≤ VDD
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance
RO
—
9
12
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
1.5
—
A
VDD = 18V
Latch-Up Protection
Withstand Reverse Current
IREV
—
>0.5
—
A
Duty cycle ≤ 2%, t ≤ 300 µs
VDD = 18V
Input
Output
Switching Time (Note 1)
Rise Time
tR
—
—
40
ns
Figure 4-1
Fall Time
tF
—
—
40
ns
Figure 4-1
Delay Time
tD1
—
—
40
ns
Figure 4-1
Delay Time
tD2
—
—
60
ns
Figure 4-1
IS
—
—
—
—
8.0
0.6
mA
VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Power Supply
Power Supply Current
Note 1:
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (M)
TA
-55
—
+125
ºC
Maximum Junction Temperature
TJ
—
—
+150
ºC
Storage Temperature Range
TA
-65
—
+150
ºC
θJA
—
150
—
ºC/W
Package Thermal Resistances
Thermal Resistance, 8L-CERDIP
DS21938A-page 4
© 2005 Microchip Technology Inc.
TC4426M/TC4427M/TC4428M
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.
100
100
2200 pF
2200 pF
80
1500 pF
1500 pF
tFALL (nsec)
tRISE (nsec)
80
60
1000 pF
40
60
1000 pF
40
470 pF
470 pF
20
20
100 pF
100 pF
0
0
4
6
FIGURE 2-1:
Voltage.
8
10
14
12
VDD (V)
16
18
Rise Time vs. Supply
100
4
14
16
18
Fall Time vs. Supply
5V
tFALL (nsec)
tRISE (nsec)
12
VDD (V)
80
10V
15V
40
20
60
10V
15V
40
20
0
100
1000
CLOAD (pF)
FIGURE 2-2:
Load.
0
100
10,000
Rise Time vs. Capacitive
Propagation Delay (nsec)
C LOAD = 1000 pF
VDD = 17.5V
40
30
tFALL
20
10
–55 –35 –15
tRISE
CLOAD = 1000 pF
VIN = 5V
tD2
tD1
© 2005 Microchip Technology Inc.
6
105 125
Rise and Fall Times vs.
10,000
Fall Time vs. Capacitive
80
75
70
65
60
55
50
45
40
35
30
25
20
4
5
25 45 65 85
TEMPERATURE (˚C)
1000
CLOAD (pF)
FIGURE 2-5:
Load.
60
TIME (nsec)
10
100
5V
60
FIGURE 2-3:
Temperature.
8
FIGURE 2-4:
Voltage.
80
50
6
8
10
12
14
16
18
VDD (V)
FIGURE 2-6:
Supply Voltage.
Propagation Delay Time vs.
DS21938A-page 5
TC4426M/TC4427M/TC4428M
Note: Unless otherwise indicated, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.
45
CLOAD = 1000 pF
55
VDD = 12V
50
45
tD2
40
35
30
tD1
25
CLOAD = 1000 pF
VIN = 5V
VDD = 18V
tD2
40
Delay Time (nsec)
Propagation Delay (nsec)
60
20
35
30
25
20
tD1
15
15
10
10
0
1
2
3
4
5
6
7
8
9
10
11
12
-55
-35
-15
Input Amplitude (V)
FIGURE 2-7:
Input Amplitude.
5
25
45
65
85
105 125
Temperature (ºC)
Propagation Delay Time vs.
FIGURE 2-10:
Temperature.
Propagation Delay Time vs.
4.0
IQUIESCENT (mA)
IQUIESCENT (mA)
V DD = 18V
BOTH INPUTS = 1
1
3.5
3.0
BOTH INPUTS = 1
2.5
BOTH INPUTS = 0
0.1
4
6
8
FIGURE 2-8:
Voltage.
10
12
VDD
14
16
2.0
–55 –35 –15
18
Supply Current vs. Supply
FIGURE 2-11:
Temperature.
25 45
TA ( C)
65
85
105 125
Supply Current vs.
25
25
20
20
WORST CASE @ TJ = +150 C
RDS(ON) (Ω)
RDS(ON) (Ω)
5
15
TYP @ TA = +25 C
10
WORST CASE @ TJ = +150 C
15
TYP @ TA = +25 C
10
8
8
5
5
4
6
8
10
12
14
16
18
4
6
VDD
FIGURE 2-9:
Supply Voltage.
DS21938A-page 6
Output Resistance (ROH) vs.
FIGURE 2-12:
Supply Voltage.
8
10
12
VDD
14
16
18
Output Resistance (ROL) vs.
© 2005 Microchip Technology Inc.
TC4426M/TC4427M/TC4428M
Note: Unless otherwise indicated, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.
60
VDD = 18V
60
2 MHz
VDD = 18V
50
1000 pF
2200 pF
50
ISUPPLY (mA)
ISUPPLY (mA)
900 kHz
40
600 kHz
30
20
200 kHz
10
40
100 pF
30
20
10
20 kHz
0
100
1000
CLOAD (pF)
FIGURE 2-13:
Capacitive Load.
0
10,000
Supply Current vs.
10
FIGURE 2-16:
Frequency.
2 MHz
VDD = 12V
VDD = 12V
50
50
40
40
ISUPPLY (mA)
ISUPPLY (mA)
Supply Current vs.
60
60
30
900 kHz
20
600 kHz
10
1000
CLOAD (pF)
FIGURE 2-14:
Capacitive Load.
2200 pF
1000 pF
30
20
100 pF
10
200 kHz
20 kHz
0
100
0
10
10,000
Supply Current vs.
100
1000
FREQUENCY (kHz)
FIGURE 2-17:
Frequency.
60
Supply Current vs.
60
VDD = 6V
VDD = 6V
50
50
40
30
ISUPPLY (mA)
ISUPPLY (mA)
100
1000
FREQUENCY (kHz)
2 MHz
20
900 kHz
600 kHz
200 kHz
20 kHz
10
0
100
FIGURE 2-15:
Capacitive Load.
1000
CLOAD (pF)
2200 pF
30
1000 pF
20
10
10,000
Supply Current vs.
© 2005 Microchip Technology Inc.
40
100 pF
0
10
FIGURE 2-18:
Frequency.
100
1000
FREQUENCY (kHz)
Supply Current vs.
DS21938A-page 7
TC4426M/TC4427M/TC4428M
Note: Unless otherwise indicated, TA = +25ºC with
4.5V ≤ VDD ≤ 18V.
–8
10
9
8
7
6
A • sec
5
4
3
2
–9
10
Note:
4
6
8
10
12
VDD
14
16
18
The values seen in this graph represent the
loss seen by both drivers in a package
during one complete cycle. For a single
driver, divide the stated values by 2. For a
single transition of a single driver, divide
the stated value by 4.
FIGURE 2-19:
Supply Voltage.
DS21938A-page 8
Crossover Energy vs.
© 2005 Microchip Technology Inc.
TC4426M/TC4427M/TC4428M
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
8-Pin
CERDIP
Symbol
1
NC
No connection
2
IN A
Input A
3
GND
Ground
4
IN B
Input B
5
OUT B
6
VDD
7
OUT A
8
NC
3.1
3.3
Output A & B (OUT A and OUT B)
MOSFET drivers OUT A & B are low-impedance,
CMOS push-pull style outputs. The pull-down and pullup devices are of equal strength, making the rise and
fall times equivalent.
Description
3.4
Output B
Supply input
Supply Input (VDD)
The VDD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed with local
ceramic capacitors. The value of these capacitors
should be chosen based on the capacitive load that is
being driven. A value of 1.0 µF is suggested.
Output A
No connection
Inputs A & B (IN A and IN B)
MOSFET drivers IN A & B are high-impedance, TTL/
CMOS-compatible inputs. These inputs also have
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.2
Ground (GND)
GND is the device return pin. The ground pin(s) should
have a low-impedance connection to the bias supply
source return. High peak currents will flow out of the
ground pin(s) when the capacitive load is being
discharged.
© 2005 Microchip Technology Inc.
DS21938A-page 9
TC4426M/TC4427M/TC4428M
4.0
APPLICATIONS INFORMATION
+5V
90%
Input
VDD = 18V
0V
4.7 µF
0.1 µF
Input
tD1
7
VDD
tR
90%
90%
Output
5
10%
10%
0V
Inverting Driver
CL = 1000 pF
4
tD2
tF
Output
6
2
10%
+5V
90%
Input
3
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 ns
0V
VDD
10%
tD1 90%
tR
Output
0V
10%
90%
tD2
tF
10%
Non-Inverting Driver
FIGURE 4-1:
DS21938A-page 10
Switching Time Test Circuit.
© 2005 Microchip Technology Inc.
TC4426M/TC4427M/TC4428M
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
8-Lead CERDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
TC4427
3
MJA e^^256
0543
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2005 Microchip Technology Inc.
DS21938A-page 11
TC4426M/TC4427M/TC4428M
8-Lead Ceramic Dual In-line – 300 mil (CERDIP)
E1
2
1
n
D
E
A2
A
c
L
B1
eB
B
A1
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Standoff §
Shoulder to Shoulder Width
Ceramic Pkg. Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
*Controlling Parameter
JEDEC Equivalent: MS-030
A
A1
E
E1
D
L
c
B1
B
eB
p
MIN
.160
.020
.290
.230
.370
.125
.008
.045
.016
.320
INCHES*
NOM
8
.100
.180
.030
.305
.265
.385
.163
.012
.055
.018
.360
MAX
.200
.040
.320
.300
.400
.200
.015
.065
.020
.400
MILLIMETERS
NOM
8
2.54
4.06
4.57
0.51
0.77
7.37
7.75
5.84
6.73
9.40
9.78
3.18
4.13
0.20
0.29
1.14
1.40
0.41
0.46
8.13
9.15
MIN
MAX
5.08
1.02
8.13
7.62
10.16
5.08
0.38
1.65
0.51
10.16
Drawing No. C04-010
DS21938A-page 12
© 2005 Microchip Technology Inc.
TC4426M/TC4427M/TC4428M
APPENDIX A:
REVISION HISTORY
Revision A (February 2005)
• Original Release of this Document.
© 2005 Microchip Technology Inc.
DS21938A-page 13
TC4426M/TC4427M/TC4428M
NOTES:
DS21938A-page 14
© 2005 Microchip Technology Inc.
TC4426M/TC4427M/TC4428M
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
XX
Device and Temperature
Range
Package
Device and
Temperature Range:
TC4426M:
TC4427M:
TC4428M:
Package:
1.5A Dual MOSFET Driver, Inverting,
-55°C to +125°C
1.5A Dual MOSFET Driver, Non-Inverting,
-55°C to +125°C
1.5A Dual MOSFET Driver, Complementary,
-55°C to +125°C
JA = Ceramic Dual In-line (300 mil Body), 8-lead
© 2005 Microchip Technology Inc.
Examples:
a)
TC4426MJA:
1.5A Dual MOSFET
driver, Inverting,
-55°C to +125°C,
8LD CERDIP package.
a)
TC4427MJA:
1.5A Dual MOSFET
driver, Non-Inverting,
-55°C to +125°C,
8LD CERDIP package.
a)
TC4428MJA:
1.5A Dual MOSFET
driver, Complementary,
-55°C to +125°C,
8LD CERDIP package.
DS21938A-page 15
TC4426M/TC4427M/TC4428M
NOTES:
DS21938A-page 16
© 2005 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
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implicitly or otherwise, under any Microchip intellectual property
rights.
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© 2005, Microchip Technology Incorporated, Printed in the
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© 2005 Microchip Technology Inc.
DS21938A-page 17
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10/20/04
DS21938A-page 18
© 2005 Microchip Technology Inc.