ONSEMI NTP2955G

NTP2955
Power MOSFET
−60 V, −12 A, Single P−Channel, TO−220
Features
•
•
•
•
Low RDS(on)
Rugged Performance
Fast Switching
Pb−Free Package is Available*
http://onsemi.com
Applications
V(BR)DSS
RDS(on) Typ
ID MAX
−60 V
156 mW @ −10 V
−12 A
• Industrial
• Automotive
• Power Supplies
P−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
±20
V
ID
−12
A
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
TC = 25°C
TC = 85°C
PD
62.5
W
TA = 25°C
ID
−2.4
A
TA = 85°C
2.4
W
IDM
−42
A
TJ,
TSTG
−55 to
175
°C
IS
−12
A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = −30 V, VG = −10 V,
IPK = −12 A, L = 3.0 mH, RG = 3.0 W)
EAS
216
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Symbol
Max
Unit
Junction−to−Case
RqJC
2.4
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
62.5
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
MARKING DIAGRAM &
PIN ASSIGNMENT
D
−1.8
PD
Pulsed Drain Current
S
−9.0
TC = 25°C
TA = 25°C
G
NT2955G
AYWW
1
2
A
Y
WW
G
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
G D S
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1
TO−220
CASE 221A
STYLE 5
THERMAL RESISTANCE RATINGS
Parameter
3
NTP2955
NTP2955G
Package
Shipping
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
NTP2955/D
NTP2955
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
67
VGS = 0 V,
VDS = −48 V
mV/°C
TJ = 25°C
−1.0
TJ = 125°C
−10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = −250 mA
mA
±100
nA
−4.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
−2.0
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
VGS = −10 V, ID = −12 A
156
gFS
VDS = −60 V, ID = −12 A
6.0
Forward Transconductance
56
mV/°C
196
mW
S
CHARGES AND CAPACITANCES
CISS
Input Capacitance
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = −25 V
507
700
150
250
48
98
nC
Total Gate Charge
QG(TOT)
14
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
6.2
td(on)
10
20
tr
41
80
27
47
45
85
TJ = 25°C
−1.6
−2.0
TJ = 125°C
−1.36
VGS = −10 V, VDS = −48 V,
ID = −12 A
1.6
pF
2.5
3.4
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VGS = −10 V, VDD = −30 V,
ID = −12 A, RG = 9.1 W
tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = −12 A
V
53
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −12 A
QRR
42
126
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
ns
12
nC
NTP2955
−7.0 V
−9.5 V
15
−6.0 V
10
−5.5 V
.
−5.0 V
5
−4.0 V
2
4
6
8
TJ = 125°C
15
10
TJ = −55°C
5
0
0
10
2
4
6
8
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.4
VGS = −10 V
0.3
T = 125°C
0.2
T = 25°C
0.1
T = −55°C
0
0
TJ = 25°C
20
−4.5 V
2
4
6
8
10
12
14
0.4
TJ = 25°C
0.3
0.2
VGS = −10 V
0.1
VGS = −15 V
0
0
2
4
6
8
10
12
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
2.0
VGS = 0 V
1.5
1.0
0.5
0
−50
−25
0
14
1000
ID = −12 A
VGS = −10 V
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = −10 V
−8.0 V
−ID, DRAIN CURRENT (A)
20
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
25
TJ = 25°C
VGS = −10 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
25
25
50
75
100
125
150
100
TJ = 125°C
10
1
175
TJ = 100°C
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation
with Temperature
Figure 6. Drain−to−Source Leakage
versus Voltage
http://onsemi.com
3
60
1100
CISS
1000
C, CAPACITANCE (pF)
VGS = −0 V
TJ = 25°C
900
800
700
CRSS
600
CISS
500
400
300
200
COSS
100
CRSS
VDS = −0 V
0
−10
−5
0
−VGS
5
10
15
20
12
TJ = 25°C
QT
10
30
6
VGS
4
20
2
10
0
25
0
4
−VDS
8
0
16
12
QG, TOTAL GATE CHARGE, (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
14
VDD = −30 V
ID = −12 A
VGS = −10 V
tf
100
−IS, SOURCE CURRENT (A)
1000
tr
td(off)
td(on)
10
1
10
6
4
2
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
VGS = −10 V
SINGLE PULSE
TJ = 25°C
100 ms
10 ms
10
0.1
0.1
8
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1 ms
1
10
RG, GATE RESISTANCE (W)
1000
100
VGS = −0 V
TJ = 25°C
12
0
100
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
10
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
t, TIME (ns)
40
QGD
QGS
Figure 7. Capacitance Variation
−ID, DRAIN CURRENT (A)
50
VDS
8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
1
60
ID = −12 A
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1200
−VGS, GATE−TO−SOURCE VOLTAGE (V)
NTP2955
100
250
ID = −12 A
200
150
100
50
0
25
50
75
100
125
150
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy
versus Starting Junction Temperature
http://onsemi.com
4
2.0
175
NTP2955
PACKAGE DIMENSIONS
TO−220
T SUFFIX
PLASTIC PACKAGE
CASE 221A−09
ISSUE AA
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
GATE
DRAIN
SOURCE
DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
5
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NTP2955/D