PANJIT PJP6000

PJP6000
60V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=14mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Converters and Power Motor Controls
• Fully Characterized Avalanche Voltage and Current
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: TO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : P6000
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R
S ym b o l
Li mi t
U ni t s
D r a i n- S o ur c e Vo l t a g e
VD S
60
V
G a t e - S o ur c e Vo l t a g e
VGS
+20
V
ID
60
A
ID M
210
A
PD
90
5 3 .5
W
TJ ,TS T G
-5 5 to +1 5 0
Avalanche Energy with Single Pulse
IA S =37A, VDD=30V, L=0.3mH
EAS
410
Junction-to-Case Thermal Resistance
RθJ C
1 .4
O
C /W
Junction-to Ambient Thermal Resistance(PCB mounted)2
RθJ A
62
O
C /W
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
M a xi m um P o w e r D i s s i p a t i o n
TA = 2 5 O C
TA = 7 5 O C
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
O
C
mJ
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.11.2007
PAGE . 1
PJP6000
ELECTRICAL CHARACTERISTICS
P a ra me te r
( TA=25OC unless otherwise noted )
S ym b o l
Te s t C o n d i t i o n
M i n.
Ty p .
M a x.
U ni t s
D r a i n- S o ur c e B r e a k d o w n Vo l t a g e
BVD SS
V G S = 0 V , ID = 2 5 0 u A
60
-
-
V
G a t e Thr e s ho l d Vo l t a g e
V G S (th)
V D S = V G S , ID = 2 5 0 u A
1
-
3
V
D r a i n- S o ur c e O n- S t a t e
R e s i s t a nc e
VG S =10V, I D =30A
-
12
14
RD S (o n)
VG S =10V, I D =30A, Tc=125O C
-
-
26
VD S =60V, VG S =0V
-
-
1
VD S =60V, VG S =0V, Tc=125O C
-
-
10
S ta ti c
mΩ
Ze r o Ga te Vo lta g e D r a i n
C ur r e nt
ID S S
Gate Body Leakage
IG S S
V G S =+2 0 V, V D S =0 V
-
-
+100
nA
g fS
V D S > ID ( O N ) X R D S ( O N ) m a x , ID = 1 5 A
25
-
-
S
-
40
-
-
3 .8
-
Forward Transconductance
uA
D ynami c
Qg
To t a l G a t e C h a r g e
V D S = 3 0 V , ID = 3 0 A
V G S =10V
G a t e - S o ur c e C ha r g e
Qg s
G a t e - D r a i n C ha r g e
Qg d
-
12
-
Tu r n - O n D e l a y Ti m e
td (o n)
-
14.6
20
-
14.2
18
-
40
60
tr
Tu r n - O n R i s e Ti m e
td (o ff)
Tu r n - O f f D e l a y Ti m e
VD D =30V , RL =15Ω
ID =2A , VG E N =10V
RG =2.5Ω
nC
ns
Tu r n - O f f F a l l Ti m e
tf
-
7 .3
9 .5
In p u t C a p a c i t a n c e
Ciss
-
1480
-
O ut p ut C a p a c i t a nc e
Coss
-
190
-
R e v e r s e Tr a n s f e r C a p a c i t a n c e
C rs s
-
135
-
V D S =2 5 V, V G S =0 V
f=1 .0 MHZ
pF
S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d C ur r e nt
D i o d e F o rwa rd Vo lta g e
Is
-
-
-
60
A
VSD
IS = 3 0 A , V G S = 0 V
-
0 .9 4
1 .2
V
V DD
Switching
Test Circuit
V IN
V DD
Gate Charge
Test Circuit
RL
V GS
RL
V OUT
RG
1mA
RG
STAD-JUN.11.2007
PAGE . 2
PJP6000
O
Typical Characteristics Curves (TA=25 C,unless otherwise noted)
100
ID - Drain Source Current (A)
ID - Drain-to-Source Current (A)
100
5.0V
6.0V~10
80
4.5V
60
40
4.0V
20
V DS=10V
=10V
VDS
80
60
25oC
40
T J=25 OC
TJ = 125oC
20
- 55oCT J =-55
0
3
6
9
12
15
2
V DS - Drain-to-Source Voltage (V)
3.5
4
4.5
5
5.5
6
50
R DS(ON) - On-Resistance (m W )
V GS = 10V
R DS(ON) - On-Resistance (m W )
3
FIG.2- Transfer Characteristic
30
25
20
15
10
5
ID =30A
40
30
125oC
20
TJ =25oC
10
0
0
0
20
40
60
80
2
100
4
6
8
10
V GS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
V GS =0V
3000
VVGS
GS =10V
=10 V
I DID=30A
=30A
C - Capacitance (pF)
RDS(ON) - On-Resistance (Normalized)
2.5
V GS - Gate-to-Source Voltage (V)
Fig. 1-TYPICAL
FORWARD
CHARACTERISTIC
FIG.1- Output
Characteristic
1.8
C
0
0
2
O
1.6
1.4
1.2
1
0.8
0.6
ff=1MHz
= 1MHz
V GS = 0V
2500
2000
Ciss
1500
1000
500
Coss
Crss
0
0.4
-50
-25
0
25
50
75
100
125
150
o
TJ - Junction Tem perature ( C)
FIG.5- On Resistance vs Junction Temperature
STAD-JUN.11.2007
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
FIG.6 - Capacitance
PAGE . 3
10
100
DS =30V
VVDS
=30 V
I D =30A
ID =30A
8
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
PJP6000
6
4
2
V GS =0V
VGS
= 0V
10
T J =125 OC
1
25oC
T J =-55 OC
-55oC
0
0
5
10
15
20
25
30
35
0.1
40
0.2
Qg - Gate Charge (nC)
1.1
1
0.9
0.8
0.7
-50
1.6
1.2
I D =250uA
BVDSS - Breakdown Voltage (NORMALIZED)
1.2
0.4
0.6
0.8
1
1.2
1.4
V SD - Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
Fig.7 - Gate Charge
Vth - G-S Threshold Voltage (NORMALIZED)
T J =25 OC
TJ = 125oC
I D =250uA
1.15
1.1
1.05
1
0.95
0.9
-25
0
25
50
75 100 125
TJ - Junction Tem perature ( oC)
-50
150
-25
0
25
50
75
100
125
150
T J - Junction Te m pe rature ( oC)
Fig.8 - Threshold Voltage vs Junction Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
1000
80
100
60
ID - Drain Current (A)
ID - Drain Current (A)
70
50
Rds(on) Limited
100us
10
40
30
20
DC
1ms
10ms
1
10
0.1
0
25
50
75
100
125
TJ - Junction Tem perature ( oC)
150
Fig.11 - Maximum Drain Current vs Junction Temperature
STAD-JUN.11.2007
0.1
1
10
100
1000
V DS - Drain-to-Source Voltage (V)
Fig.12 - Safe Operation Area
PAGE . 4