PJP6000 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=14mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: TO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : P6000 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e VD S 60 V G a t e - S o ur c e Vo l t a g e VGS +20 V ID 60 A ID M 210 A PD 90 5 3 .5 W TJ ,TS T G -5 5 to +1 5 0 Avalanche Energy with Single Pulse IA S =37A, VDD=30V, L=0.3mH EAS 410 Junction-to-Case Thermal Resistance RθJ C 1 .4 O C /W Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJ A 62 O C /W C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n TA = 2 5 O C TA = 7 5 O C O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e O C mJ Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.11.2007 PAGE . 1 PJP6000 ELECTRICAL CHARACTERISTICS P a ra me te r ( TA=25OC unless otherwise noted ) S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e BVD SS V G S = 0 V , ID = 2 5 0 u A 60 - - V G a t e Thr e s ho l d Vo l t a g e V G S (th) V D S = V G S , ID = 2 5 0 u A 1 - 3 V D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e VG S =10V, I D =30A - 12 14 RD S (o n) VG S =10V, I D =30A, Tc=125O C - - 26 VD S =60V, VG S =0V - - 1 VD S =60V, VG S =0V, Tc=125O C - - 10 S ta ti c mΩ Ze r o Ga te Vo lta g e D r a i n C ur r e nt ID S S Gate Body Leakage IG S S V G S =+2 0 V, V D S =0 V - - +100 nA g fS V D S > ID ( O N ) X R D S ( O N ) m a x , ID = 1 5 A 25 - - S - 40 - - 3 .8 - Forward Transconductance uA D ynami c Qg To t a l G a t e C h a r g e V D S = 3 0 V , ID = 3 0 A V G S =10V G a t e - S o ur c e C ha r g e Qg s G a t e - D r a i n C ha r g e Qg d - 12 - Tu r n - O n D e l a y Ti m e td (o n) - 14.6 20 - 14.2 18 - 40 60 tr Tu r n - O n R i s e Ti m e td (o ff) Tu r n - O f f D e l a y Ti m e VD D =30V , RL =15Ω ID =2A , VG E N =10V RG =2.5Ω nC ns Tu r n - O f f F a l l Ti m e tf - 7 .3 9 .5 In p u t C a p a c i t a n c e Ciss - 1480 - O ut p ut C a p a c i t a nc e Coss - 190 - R e v e r s e Tr a n s f e r C a p a c i t a n c e C rs s - 135 - V D S =2 5 V, V G S =0 V f=1 .0 MHZ pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 60 A VSD IS = 3 0 A , V G S = 0 V - 0 .9 4 1 .2 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-JUN.11.2007 PAGE . 2 PJP6000 O Typical Characteristics Curves (TA=25 C,unless otherwise noted) 100 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 100 5.0V 6.0V~10 80 4.5V 60 40 4.0V 20 V DS=10V =10V VDS 80 60 25oC 40 T J=25 OC TJ = 125oC 20 - 55oCT J =-55 0 3 6 9 12 15 2 V DS - Drain-to-Source Voltage (V) 3.5 4 4.5 5 5.5 6 50 R DS(ON) - On-Resistance (m W ) V GS = 10V R DS(ON) - On-Resistance (m W ) 3 FIG.2- Transfer Characteristic 30 25 20 15 10 5 ID =30A 40 30 125oC 20 TJ =25oC 10 0 0 0 20 40 60 80 2 100 4 6 8 10 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage V GS =0V 3000 VVGS GS =10V =10 V I DID=30A =30A C - Capacitance (pF) RDS(ON) - On-Resistance (Normalized) 2.5 V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 1.8 C 0 0 2 O 1.6 1.4 1.2 1 0.8 0.6 ff=1MHz = 1MHz V GS = 0V 2500 2000 Ciss 1500 1000 500 Coss Crss 0 0.4 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Tem perature ( C) FIG.5- On Resistance vs Junction Temperature STAD-JUN.11.2007 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) FIG.6 - Capacitance PAGE . 3 10 100 DS =30V VVDS =30 V I D =30A ID =30A 8 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) PJP6000 6 4 2 V GS =0V VGS = 0V 10 T J =125 OC 1 25oC T J =-55 OC -55oC 0 0 5 10 15 20 25 30 35 0.1 40 0.2 Qg - Gate Charge (nC) 1.1 1 0.9 0.8 0.7 -50 1.6 1.2 I D =250uA BVDSS - Breakdown Voltage (NORMALIZED) 1.2 0.4 0.6 0.8 1 1.2 1.4 V SD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage Fig.7 - Gate Charge Vth - G-S Threshold Voltage (NORMALIZED) T J =25 OC TJ = 125oC I D =250uA 1.15 1.1 1.05 1 0.95 0.9 -25 0 25 50 75 100 125 TJ - Junction Tem perature ( oC) -50 150 -25 0 25 50 75 100 125 150 T J - Junction Te m pe rature ( oC) Fig.8 - Threshold Voltage vs Junction Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 1000 80 100 60 ID - Drain Current (A) ID - Drain Current (A) 70 50 Rds(on) Limited 100us 10 40 30 20 DC 1ms 10ms 1 10 0.1 0 25 50 75 100 125 TJ - Junction Tem perature ( oC) 150 Fig.11 - Maximum Drain Current vs Junction Temperature STAD-JUN.11.2007 0.1 1 10 100 1000 V DS - Drain-to-Source Voltage (V) Fig.12 - Safe Operation Area PAGE . 4