HY12N65T / HY12N65FT 650V / 12A 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 G 23 D S Mechanical Information 1 G 23 D S ITO-220AB TO-220AB • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 2 Drain Marking & Ordering Information TYPE MARKING PACKAGE PACKING HY12N65T 12N65T TO-220AB 50PCS/TUBE HY12N65FT 12N65FT ITO-220AB 50PCS/TUBE 1 Gate Gate 3 Source Absolute Maximum Ratings (TC=25OC unless otherwise noted ) P a ra me te r S ymb o l HY1 2 N6 5 T HY1 2 N6 5 F T Uni ts D ra i n-S o urc e Vo lta g e V DS 650 V Ga te -S o urc e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urre nt T C =2 5 O C P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T C =2 5 O C Avalanche Energy with Single Pulse IAS=12A, VDD=90V, L=10.5mΗ Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e ID 12 12 A ID M 48 48 A PD 175 1 .4 52 0 .4 2 W E AS 760 mJ T J ,T S TG -5 5 to +1 5 0 O C Note : 1. Maximum DC current limited by the package Thermal Characteristics PA RA M E TE R S ym b o l HY1 2 N6 5 T HY1 2 N6 5 F T Uni ts Junction-to-Case Thermal Resistance R θJC 0 .7 2 .4 O C /W Junction-to Ambient Thermal Resistance R θJA 6 2 .5 100 O C /W COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV1.0 : AUG. 2011 PAGE . 1 HY12N65T / HY12N65FT Electrical Characteristics ( TC=25OC unless otherwise noted ) P a ra m e te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D ra i n-S o urc e B re a k d o wn Vo lta g e B V DSS V GS =0 V, I D =2 5 0 uA 650 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S (o n) VGS= 10V, I D= 6.0A - 0.69 0.8 Ω I DSS VDS=650V, VGS=0V - - 10 uA I GS S V GS =+3 0 V, V D S =0 V - - +1 0 0 nΑ - 4 2 .6 52 - 8 .2 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urr e nt Gate Body Leakage Dynamic To ta l Ga te C ha r g e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 12.8 - Turn- On D e la y Ti me t d (o n) - 14.6 20 - 22.6 32 - 6 5 .2 85 f - 2 2 .8 36 - 1400 2050 - 175 210 - 5.5 12 Turn- On Ri s e Ti m e Turn- Off D e la y Ti m e t t r d (o ff) Turn- Off F a ll Ti m e t Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C oss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S = 5 2 0 V, ID = 1 2 A , V GS =1 0 V VDD=325V, I D =12A V GS =1 0 V, RG=25Ω V D S =2 5 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS - - - 12 A M a x.P uls e d S o urc e C urre nt I SM - - - 48 A D i o d e F o rwa rd Vo lta g e V SD IS = 1 2 A , V GS =0 V - - 1 .4 V Re ve rs e Re c o ve ry Ti me t - 460 - ns Re ve rs e Re c o ve ry C ha rg e Q V GS =0 V, IF = 1 2 A d i /d t=1 0 0 A /us - 4 .6 - uC rr rr NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. REV1.0 : AUG. 2011 PAGE . 2 HY12N65T / HY12N65FT Typical Characteristics Curves ( TC=25℃ ℃, unless otherwise noted) 100 VGS= 20V~ 7.0V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 24 20 16 6.0V 12 8 5.0V 4 VDS =50V 10 TJ = 125oC -55oC 0.1 0 0 10 20 30 40 1 50 VDS - Drain-to-Source Voltage (V) Fig.1 Output Characteristric 8 3 Ω) RDS(ON) - On Resistance( Resistance(Ω Ω) RDS(ON) - On Resistance( Resistance(Ω 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Fig.2 Transfer Characteristric 1.5 1.2 0.9 VGS=10V 0.6 VGS = 20V 0.3 ID =6.0A 2.5 2 1.5 1 0.5 0 0 0 4 8 12 16 3 20 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Fig.3 On-Resistance vs Drain Current Fig.4 On-Resistance vs Gate to Source Voltage 2500 12 f = 1MHz VGS = 0V VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 25oC 1 2000 Ciss 1500 1000 Crss Coss 500 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic REV 1.0 : AUG. 2011 30 ID =12A 10 VDS=520V VDS=325V 8 VDS=130V 6 4 2 0 0 5 10 15 20 25 30 35 40 45 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic PAGE. 3 HY12N65T / HY12N65FT Typical Characteristics Curves ( TC=25℃ ℃, unless otherwise noted) 1.2 VGS =10 V ID =6.0A 2.1 BVDSS - Breakdown Voltage (Normalized) RDS(ON) - On-Resistance (Normalized) 2.5 1.7 1.3 0.9 0.5 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.7 On-Resistance vs Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.8 Breakdown Voltage vs Junction Temperature IS - Source Current (A) VGS = 0V 10 TJ = 125oC 25oC 1 -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.9 Body Diode Forward Voltage Characteristic REV 1.0 : AUG. 2011 PAGE. 4