HY HY1N60D

HY1N60D / HY1N60M
600V / 1.0A
600V, RDS(ON)=12Ω@VGS=10V, ID=0.5A
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
•
•
Low ON Resistance
Fast Switching
Low Gate Charge & Low CRSS
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charger
In compliance with EU RoHs 2002/95/EC Directives
G
1
2
1
G 2
D S3
D
3
S
Mechanical Information
TO-251
TO-252
• Case: TO-252 / ITO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
2 Drain
Marking & Ordering Information
TYPE
MARKING
PACKAGE
PACKING
HY1N60D
1N60D
TO-252
2500PCS/REEL
HY1N60M
1N60M
TO-251
80PCS/TUBE
1
Gate
3 Source
Absolute Maximum Ratings (TC=25OC unless otherwise noted )
P a ra me te r
S ymb o l
HY1 N6 0 D
HY1 N6 0 M
Uni ts
D r a i n- S o urc e Vo lta g e
V DS
600
V
Ga te -S o ur c e Vo lta g e
V GS
+3 0
V
C o nti nuo us D ra i n C urr e nt
T C = 2 5 OC
P uls e d D ra i n C urr e nt 1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T C = 2 5 OC
Avalanche Energy with Single Pulse
IAS=1.5A, VDD=50V, L=48mΗ
Op e r a ti ng J unc ti o n a nd S to r a g e Te mp e ra ture Ra ng e
ID
1
1
A
ID M
4
4
A
PD
39
0 .3 1
3 5 .7
0 .2 9 5
W
E AS
52
mJ
T J ,T S TG
- 5 5 to +1 5 0
O
C
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
PA RA M E TE R
S ym b o l
HY1 N6 0 D
HY1 N6 0 M
Uni ts
Junction-to-Case Thermal Resistance
R θJC
3 .2
3 .5
O
C /W
Junction-to Ambient Thermal Resistance
R θJA
50
11 0
O
C /W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV1.0 : AUG. 2011
PAGE . 1
HY1N60D / HY1N60M
Electrical Characteristics ( TC=25OC unless otherwise noted )
P a ra m e te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
D ra i n-S o urc e B re a k d o wn Vo lta g e
B V DSS
V GS =0 V, I D =2 5 0 uA
600
-
-
V
Ga te Thre s ho ld Vo lta g e
V GS (th)
V D S =V GS , I D =2 5 0 uA
2 .0
-
4 .0
V
R D S (o n)
VGS= 10V, I D= 0.5A
-
8.2
12
Ω
I DSS
VDS=600V, VGS=0V
-
-
10
uA
I GS S
V GS =+3 0 V, V D S =0 V
-
-
+1 0 0
nΑ
-
5 .2
8 .2
-
1 .2
-
S ta ti c
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urr e nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha r g e
Qg
Ga te -S o urc e C ha rg e
Q
gs
Ga te -D ra i n C ha rg e
Q
gd
-
2.4
-
Turn- On D e la y Ti me
t
d (o n)
-
9.2
16
-
6.6
11
-
1 4 .8
22
f
-
9 .8
16
-
132
205
-
22
36
-
0.6
2.2
Turn- On Ri s e Ti m e
Turn- Off D e la y Ti m e
t
t
r
d (o ff)
Turn- Off F a ll Ti m e
t
Inp ut C a p a c i ta nc e
C
i ss
Outp ut C a p a c i ta nc e
C
oss
Re ve rs e Tra ns fe r
C a p a c i ta nc e
C
rs s
V D S =4 8 0 V, ID = 1 .0 A
V GS =1 0 V
VDD=300V ,I D =1.0A
VGS=10V ,RG=25Ω
V D S =2 5 V, V GS =0 V
f=1 .0 MH Z
nC
ns
pF
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
IS
-
-
-
1 .0
A
M a x.P uls e d S o urc e C urre nt
I SM
-
-
-
4 .0
A
D i o d e F o rwa rd Vo lta g e
V SD
IS = 1 .0 A , V GS =0 V
-
-
1 .4
V
Re ve rs e Re c o ve ry Ti me
t
-
210
-
ns
Re ve rs e Re c o ve ry C ha rg e
Q
V GS =0 V, IF = 1 .0 A
d i /d t=1 0 0 A /us
-
1 .0
-
uC
rr
rr
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
REV1.0 : AUG. 2011
PAGE . 2
HY1N60D / HY1N60M
Typical Characteristics Curves ( TC=25℃
℃, unless otherwise noted)
10
VGS= 20V~ 8.0V
ID - Drain Source Current (A)
ID - Drain-to-Source Current (A)
2
7.0V
1.6
1.2
6.0V
0.8
0.4
5.0V
0
VDS =50V
1
25oC
TJ = 125oC
-55oC
0.1
0
10
20
30
40
50
2
VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
4
5
6
7
VGS - Gate-to-Source Voltage (V)
20
RDS(ON) - On Resistance(
Resistance(Ω
Ω)
16
12
VGS=10V
8
VGS=20V
ID =0.5A
16
12
8
4
4
0
1
2
3
4
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Fig.3 On-Resistance vs Drain Current
Fig.4 On-Resistance vs Gate to Source Voltage
250
12
f = 1MHz
VGS = 0V
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
8
Fig.2 Transfer Characteristric
20
RDS(ON) - On Resistance(
Resistance(Ω
Ω)
3
200
Ciss
150
100
Coss
50
Crss
0
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
REV 1.0 : AUG. 2011
30
ID =1A
10
VDS=480V
VDS=300V
8
VDS=120V
6
4
2
0
0
1
2
3
4
5
6
Qg - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
PAGE. 3
HY1N60D / HY1N60M
Typical Characteristics Curves ( TC=25℃
℃, unless otherwise noted)
1.2
VGS =10 V
ID =0.5A
2.1
BVDSS - Breakdown Voltage
(Normalized)
RDS(ON) - On-Resistance
(Normalized)
2.5
1.7
1.3
0.9
0.5
ID = 250µA
1.1
1
0.9
0.8
-50
-25
0
25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.7 On-Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100 125 150
TJ - Junction Temperature (oC)
Fig.8 Breakdown Voltage
vs Junction Temperature
10
IS - Source Current (A)
VGS = 0V
1
TJ = 125oC
25oC
0.1
-55oC
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig.9 Body Diode
Forward Voltage Characteristic
REV 1.0 : AUG. 2011
PAGE. 4