Ordering number : EN0572F 2SA1016, 1016K / 2SC2362, 2362K SANYO Semiconductors DATA SHEET 2SA1016, 1016K 2SC2362, 2362K PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp Applications Specifications ( ) : 2SA1016, 1016K Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Collector-to-Emitter Voltage VCBO VCEO Emitter-to-Base Voltage VEBO Collector Current Conditions 2SA1016, 2SC2362 2SA1016K, 2SC2362K (--)120 (--)150 (--)100 (--)120 Unit V V (--)5 V (--)50 mA Collector Current (Pulse) IC ICP (--)100 mA Collector Dissipation PC 400 mW 125 °C --55 to +125 °C Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)80V, IE=0A (--)1.0 μA Emitter Cutoff Current IEBO hFE VEB=(--)4V, IC=0A (--)1.0 μA DC Current Gain Gain-Bandwidth Product Output Capacitance fT Cob Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VCE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO VCE=(--)6V, IC=(--)1mA VCE=(--)6V, IC=(--)1mA 160* 960* (110)130 VCB=(--)10V, f=1MHz MHz (2.2)1.8 IC=(--)10mA, IB=(--)1mA pF (--)0.5 V IC=(--)10μA, IE=0A [2SA1016, 2SC2362] (--)120 IC=(--)10μA, IE=0A [2SA1016K, 2SC2362K] (--)150 V IC=(--)1mA, RBE=∞ [2SA1016, 2SC2362] (--)100 V IC=(--)1mA, RBE=∞ [2SA1016K, 2SC2362K] (--)120 V (--)5 V IE=(--)10μA, IC=0A V Continued on next page. * : The 2SA1016,1016K/2SC2362, 2362K are classified by 1mA hFE as follows : Rank F G H hFE 160 to 320 280 to 560 480 to 960 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71608GA TI IM TC-00001502 / 70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI No.0572-1/5 2SA1016, 1016K / 2SC2362, 2362K Continued from preceding page. Parameter Symbol Noise Level VNO(ave) VNO(peak) Noise Peak Level Ratings Conditions min typ Unit max VCC=30V, IC=1mA, Rg=56kΩ,VG=77dB/1kHz VCC=30V, IC=1mA, Rg=56kΩ,VG=77dB/1kHz 35 mV 200 mV Package Dimensions unit : mm (typ) 7522-002 5.0 4.0 5.0 4.0 14.0 0.6 2.0 0.45 0.5 0.45 0.44 1 2 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : NP 1.3 IC -- VCE --12 IC -- VCE 12 2SA1016, 1016K 0μA --35 --8 0 --30 10 μA Collector Current, IC -- mA Collector Current, IC -- mA --10 A 250μ -- μA --200 A --150μ --6 --100μA --4 --50μA --2 0 0 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 250μA 8 200μA 150μA 6 100μA 4 50μA 2 IB=0μA --10 2SC2362, 2362K IB=0μA 0 --50 ITR02951 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR02952 No.0572-2/5 2SA1016, 1016K / 2SC2362, 2362K IB -- VBE --100 Base Current, IB -- μA Base Current, IB -- μA --60 --40 --20 40 0 0 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE -- V --1.0 0 0.8 1.0 ITR02954 2SC2362, 2362K VCE=6V 7 5 DC Current Gain, hFE 3 2 100 7 5 3 2 3 2 100 7 5 3 2 10 3 5 2 --1.0 3 5 --10 2 3 10 0.1 5 --100 ITR02957 f T -- IC 5 2 100 7 5 3 2 3 5 7 2 10 Collector Current, IC -- mA 3 2 1.0 3 5 2 10 3 7 5 3 2 3 5 7 2 10 1.0 3 Collector Current, IC -- mA Output Capacitance, Cob -- pF 2 100 2 ITR02958 100 5 ITR02956 Cob -- VCB 2SC2362, 2362K f=1MHz 7 3 5 2 10 5 3 2SC2362, 2362K VCE=6V ITR02955 2SA1016, 1016K f=1MHz 7 5 f T -- IC 2 1.0 5 Cob -- VCB 10 3 5 2SA1016, 1016K VCE=--6V 3 2 Collector Current, IC -- mA Gain-Bandwidth Product, f T -- MHz 2 Collector Current, IC -- mA 7 --1.0 0.6 hFE -- IC 1000 5 2 1.0 0.4 Base-to-Emitter Voltage, VBE -- V 2SA1016, 1016K VCE=--6V 7 7 5 --0.1 0.2 ITR02953 hFE -- IC 1000 DC Current Gain, hFE 60 20 0 Gain-Bandwidth Product, f T -- MHz 2SC2362, 2362K VCE=5V 80 --80 Output Capacitance, Cob -- pF IB -- VBE 100 2SA1016, 1016K VCE=--5V 5 3 2 1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 ITR02959 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 7 100 ITR02960 No.0572-3/5 2SA1016, 1016K / 2SC2362, 2362K 15 dB 2 4d dB B 6 8d dB B dB 400 6K 01 2K , 1 36 16 , 2 10 2 A 36 2S SC2 2 15 12 dB 1.0k 6dB 2 3 4dB B 3 5 2dB d =1 5 8dB 10k NF Signal Source Resistance, Rg -- Ω 2 B 3 PC -- Ta 500 d 12 5 Contour of NF 2SA1016, 1016K f=10Hz Δf=1Hz VCE=--6V Collector Dissipation, PC -- mW 100k 300 200 100 2 0.1k --0.001 2 3 0 5 --0.01 2 3 5 --0.1 2 3 5 Collector Current, IC -- --1.0 2 3 5 --10 mA ITR02961 0 25 50 Contour of NF dB 2 3 5 10 2 3 Signal Source Resistance, Rg -- Ω 2 B 3 8d Signal Source Resistance, Rg -- Ω 1000 2 3 5 10000 ITR02964 B 6d B 4d 2 6 8d dB B 15 dB dB 12 0.1k --0.001 2 3 5 B 2d B 3 B 5 2SC2362, 2362K f=1kHz VCE=6V d =1 5 100 2 3 NF 4d 1.0k 6dB 1d B 2d B 2 dB B 8d 3 dB dB 15 12 0.7 5 1dB dB 0.7 10k 5 Contour of NF 100 4dB B 2d 2 dB 12 12 3 Contour of NF 3 dB 14 5 Collector Current, IC -- μA 100k 5 B 6d 8d B B 1.0 Collector Current, IC -- mA 2SA1016, 1016K f=1kHz Δf=1Hz VCE=--6V 6d 2d B 4d B 0.1 1.0 --1.0 2 3 5 --10 ITR02963 B 5 B --0.1 2 3 2d 3 2 dB 5 4d 5 2 5 --0.01 2 3 150 ITR02962 14 2 0.1k --0.001 2 3 4d B 10 dB =1 3 6d 8 B 12 dB 15 dB dB B 3 2 2SC2362, 2362K VCE=6V f=10Hz NF 5 B 2d 6dB 1.0k 4dB 1d 3 2 1dB B .7d =0 5 2dB 10k 125 B 8d 2 5 dB 15 B d 12 8dB 3 NF Signal Source Resistance, Rg -- Ω 5 100 Contour of NF 100 2SA1016, 1016K f=100Hz Δf=1Hz VCE=--6V Signal Source Resistance, Rg -- Ω 100k 75 Ambient Temperature, Ta -- °C 10 NF =1 dB 5 3 2 4d 2 B dB 6d B 1.0 5 3 2 12 8dB dB 14 dB 0.1 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 ITR02965 Collector Current, IC -- mA 1.0 2 3 5 10 2 3 5 100 2 3 5 1000 2 3 5 10000 ITR02966 Collector Current, IC -- μA Contour of NF 100k 0. 3 2 1d B 2d 7d B B 4d 1.0k B 6d B 5 12 2 B 8d 3 dB 15 Signal Source Resistance, Rg -- Ω 5 6dB dB 10k 4dB 2dB 1dB dB 0.7 2 .5 =0 NF 3 dB 15 B d 12 B 8d 5 2SA1016, 1016K f=10kHz Δf=1Hz VCE=--6V dB 0.1k --0.001 2 3 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 ITR02967 Collector Current, IC -- mA No.0572-4/5 2SA1016, 1016K / 2SC2362, 2362K SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No.0572-5/5