2SD1620 Ordering number : EN1719C SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features • • • • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high current. Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Symbol Conditions Ratings Unit VCBO VCEX 30 V 20 V VCEO VEBO 10 V 6 V Collector Current (Pulse) IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 3 A 5 A 500 Mounted on a ceramic board (250mm2✕0.8mm) mW 1.3 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ max Unit ICBO IEBO VCB=20V, IE=0A 100 nA Emitter Cutoff Current VEB=4V, IC=0A 100 nA DC Current Gain hFE VCE=2V, IC=3A Gain-Bandwidth Product fT Cob VCE=10V, IC=50mA Output Capacitance VCB=10V, f=1MHz 140 210 200 MHz 30 pF Continued on next page. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010EA TK IM / 31005TN(PC)/21599TH (KT)/N1596TS(KOTO)8-7707/5277KI/3045MW, TS No.1719-1/4 2SD1620 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage Ratings Conditions min typ Unit max Collector-to-Base Breakdown Voltage VCE(sat) V(BR)CBO IC=3A, IB=60mA IC=10μA, IE=0A 30 0.3 0.4 V Collector-to-Emitter Breakdown Voltage V(BR)CEX V V(BR)CEO IC=1mA, VBE=3V IC=1mA, RBE=∞ 20 Collector-to-Emitter Breakdown Voltage 10 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6 V V Package Dimensions unit : mm (typ) 7007B-004 IC -- VCE 25mA 3 15mA 10mA 2 5mA 1 IB=0mA 0 0.2 0.4 0.6 0.8 mA 25mA 15mA 3 10mA 2 5mA 1 2mA 0 4 40 mA A 40m 60 4 IC -- VCE 5 Collector Current, IC -- A Collector Current, IC -- A 5 2mA 1mA IB=0mA 0 1.0 Collector-to-Emitter Voltage, VCE -- V 1.2 ITR09987 0 5 6 Collector-to-Emitter Voltage, VCE -- V 1 2 3 4 ITR09988 No.1719-2/4 2SD1620 IC -- VBE 3.2 hFE -- IC 1000 VCE=2V 2.8 7 2.4 5 DC Current Gain, hFE Collector Current, IC -- A VCE=2V 2.0 1.6 1.2 0.8 3 2 100 0.4 7 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 5 0.01 1.2 3 5 2 0.1 3 5 2 1.0 3 Collector Current, IC -- A f T -- IC 1000 2 ITR09989 Cob -- VCB 3 f=1MHz 2 7 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz VCE=10V 5 3 2 100 100 7 5 3 2 7 5 10 2 3 5 7 2 100 3 5 Collector Current, IC -- mA 10 1.0 7 1000 ITR09991 2 Collector Current, IC -- A 100 7 ICP=5A DC 1.0 7 5 Single pulse Tc=25°C 3 2 3 5 7 10 ITR09993 PC -- Ta 1.6 op era tio n 2 7 5 1.0 s 3 3 7 0m 2 0.1 5 10 IC=3A 3 5 Collector Current, IC -- A 5 ITR09992 s 2 3 m 3 2 10 10 5 7 s 1m 7 3 5 ASO 7 5 1000 2 3 10 IC / IB=50 2 0.1 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 10 ITR09990 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V ITR09995 Collector Dissipation, PC -- W 1.4 M ou nt ed on a 1.2 1.0 0.8 ce ra m ic bo ar d 0.6 No h eat s 0.4 ink 0.2 (2 50 m m2 ✕0 .8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR09994 No.1719-3/4 2SD1620 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.1719-4/4