ONSEMI 2SD1207T

2SB892 / 2SD1207
Ordering number : EN930D
SANYO Semiconductors
DATA SHEET
2SB892 / 2SD1207
PNP / NPN Epitaxial Planar Silicon Transistors
Large-Current Switching Applications
Applications
•
Power supplies, relay drivers, lamp drivers, and automotive wiring.
Features
•
•
•
FBET and MBIT processed (Original process of SANYO).
Low saturation voltage.
Large current capacity and wide ASO.
Specifications ( ) : 2SB892
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
(--)60
(--)50
V
VEBO
IC
(--)6
V
(--)2
A
ICP
PC
(--)4
A
1
W
150
°C
--55 to +150
°C
Junction Temperature
Tj
Storage Temperature
Tstg
V
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
Ratings
min
typ
max
Unit
VCB=(--)50V, IE=0A
(--)0.1
μA
VEB=(--)4V, IC=0A
(--)0.1
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’ s products or
equipment.
www.semiconductor-sanyo.com/network
D0308EA MS IM TC-00001739 / 10904TN (KT)/91098HA (KT)/4067KI/3145KI No.930-1/5
2SB892 / 2SD1207
Continued from preceding page.
Parameter
Symbol
hFE1*
DC Current Gain
Ratings
Conditions
min
VCE=(--)2V, IC=(--)100mA
VCE=(--)2V, IC=(--)1.5A
hFE2
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
typ
Unit
max
100
560
40
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
150
MHz
(22)12
IC=(--)1A, IB=(--)50mA
IC=(--)1A, IB=(--)50mA
pF
(--0.3)0.15
(--0.7)0.4
V
(--)0.9
(--)1.2
V
(--)60
V
V(BR)CEO
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
(--)50
V
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
* : The 2SB892 / 2SD1207 are graded as follows by hFE at 100mA :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Package Dimensions
unit : mm (typ)
7520-002
4.7
8.5
6.0
5.0
3.0
0.5
0.6
0.5
14.0
1.0
0.5
1 : Emitter
2 : Collector
3 : Base
1 2 3
1.45
SANYO : MP
1.45
IC -- VCE
--2.4
A
40m
0m
A
Collector Current, IC -- A
2.0
--5
--1.6
mA
0
--2
--1.2
--0.8
A
--10m
--8mA
--6mA
--4mA
--2mA
--0.4
0
--0.4
--0.8
--1.2
25mA
1.6
15mA
1.2
8mA
0.8
4mA
2mA
0.4
IB=0mA
0
2SD1207
mA
50
--2.0
Collector Current, IC -- A
IC -- VCE
2.4
2SB892
--1.6
IB=0mA
0
--2.0
Collector-to-Emitter Voltage, VCE -- V
--2.4
ITR08646
0
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V
2.4
ITR08647
No.930-2/5
2SB892 / 2SD1207
IC -- VCE
--1200
--7mA
--6mA
--5mA
--800
--4mA
--600
--3mA
--2mA
--400
--1mA
--200
IB=0mA
0
--2
--4
--6
--8
3mA
400
2mA
1mA
IB=0mA
2
4
6
8
10
12
Collector-to-Emitter Voltage, VCE -- V
ITR08648
IC -- VBE
ITR08649
IC -- VBE
1200
2SB892
VCE= --2V
2SD1207
VCE=2V
1000
Collector Current, IC -- mA
Collector Current, IC -- mA
600
0
--800
--600
--400
800
600
400
200
--200
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
0
DC Current Gain, hFE
100
7
5
100
7
5
3
2
3
5
7 --1000
2
Collector Current, IC -- mA
3
100
7
5
3
2
5
7 --100
2
3
5
7 --1000
Collector Current, IC -- mA
2
7 100
2
3
5
7 1000
3
ITR08654
2
3
5
ITR08653
f T -- IC
2SD1207
VCB=10V
7
2
3
5
1000
3
2
3
Collector Current, IC -- mA
Gain-Bandwidth Product, f T -- MHz
5
2
ITR08652
2SB892
VCB= --10V
7
10
--10
10
10
5
f T -- IC
1000
2SD1207
VCE=2V
2
2
2
1.2
ITR08651
3
3
7 --100
1.0
5
2
5
0.8
7
3
3
0.6
hFE -- IC
1000
5
2
0.4
Base-to-Emitter Voltage, VBE -- V
2SB892
VCE= --2V
7
10
--10
0.2
ITR08650
hFE -- IC
1000
DC Current Gain, hFE
4mA
--12
--1000
Gain-Bandwidth Product, f T -- MHz
800
0
--10
Collector-to-Emitter Voltage, VCE -- V
--1200
5mA
200
0
2SD1207
7mA
6mA
1000
Collector Current, IC -- mA
Collector Current, IC -- mA
--1000
IC -- VCE
1200
2SB892
5
3
2
100
7
5
3
2
10
10
2
3
5
7 100
2
3
5
7 1000
Collector Current, IC -- mA
2
3
ITR08655
No.930-3/5
2SB892 / 2SD1207
Cob -- VCB
2SB892
f=1MHz
7
5
3
2
10
5
3
2
10
7
7
5
--1.0
2
3
5
7
2
--10
3
5
Collector-to-Base Voltage, VCB -- V
5
1.0
7 --100
ITR08656
2
3
5
3
2
--10
5
2
--1.0
5
2
--0.1
5
5
2
7 100
ITR08657
2SD1207
IC / IB=20
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
2
10
VCE(sat) -- IC
100
2SB892
IC / IB=20
7
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
--100
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SD1207
f=1MHz
7
100
2
10
5
2
1.0
5
2
0.1
5
2
--0.01
--10
2
3
5
7 --100
2
3
5
7 --1000
Collector Current, IC -- mA
2
0.01
10
3
3
2
IC=2A
1m
op
era
ms
3
2
s
DC
10
5
0m
10
s
1.0
tio
n
0.1
5
3
2
5
7 100
2
3
5
7 1000
2
3
ITR08659
PC -- Ta
1200
Collector Dissipation, PC -- mW
ICP=4A
3
Collector Current, IC -- mA
2SB892 / 2SD1207
5
2
ITR08658
ASO
10
Collector Current, IC -- A
Cob -- VCB
100
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
2
2SB892 / 2SD1207
1000
800
600
400
200
0.01
(For PNP minus sign is omitted.)
5
3
5
7
1.0
2
3
5
7
0
10
2
3
Collector-to-Emitter Voltage, VCE --
5
7 100
V ITR08661
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR08660
No.930-4/5
2SB892 / 2SD1207
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of December, 2008. Specifications and information herein are subject
to change without notice.
PS No.930-5/5