2SB892 / 2SD1207 Ordering number : EN930D SANYO Semiconductors DATA SHEET 2SB892 / 2SD1207 PNP / NPN Epitaxial Planar Silicon Transistors Large-Current Switching Applications Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring. Features • • • FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and wide ASO. Specifications ( ) : 2SB892 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO (--)60 (--)50 V VEBO IC (--)6 V (--)2 A ICP PC (--)4 A 1 W 150 °C --55 to +150 °C Junction Temperature Tj Storage Temperature Tstg V Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions Ratings min typ max Unit VCB=(--)50V, IE=0A (--)0.1 μA VEB=(--)4V, IC=0A (--)0.1 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’ s products or equipment. www.semiconductor-sanyo.com/network D0308EA MS IM TC-00001739 / 10904TN (KT)/91098HA (KT)/4067KI/3145KI No.930-1/5 2SB892 / 2SD1207 Continued from preceding page. Parameter Symbol hFE1* DC Current Gain Ratings Conditions min VCE=(--)2V, IC=(--)100mA VCE=(--)2V, IC=(--)1.5A hFE2 Gain-Bandwidth Product fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage typ Unit max 100 560 40 VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz 150 MHz (22)12 IC=(--)1A, IB=(--)50mA IC=(--)1A, IB=(--)50mA pF (--0.3)0.15 (--0.7)0.4 V (--)0.9 (--)1.2 V (--)60 V V(BR)CEO IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ (--)50 V V(BR)EBO IE=(--)10μA, IC=0A (--)6 V * : The 2SB892 / 2SD1207 are graded as follows by hFE at 100mA : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Package Dimensions unit : mm (typ) 7520-002 4.7 8.5 6.0 5.0 3.0 0.5 0.6 0.5 14.0 1.0 0.5 1 : Emitter 2 : Collector 3 : Base 1 2 3 1.45 SANYO : MP 1.45 IC -- VCE --2.4 A 40m 0m A Collector Current, IC -- A 2.0 --5 --1.6 mA 0 --2 --1.2 --0.8 A --10m --8mA --6mA --4mA --2mA --0.4 0 --0.4 --0.8 --1.2 25mA 1.6 15mA 1.2 8mA 0.8 4mA 2mA 0.4 IB=0mA 0 2SD1207 mA 50 --2.0 Collector Current, IC -- A IC -- VCE 2.4 2SB892 --1.6 IB=0mA 0 --2.0 Collector-to-Emitter Voltage, VCE -- V --2.4 ITR08646 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V 2.4 ITR08647 No.930-2/5 2SB892 / 2SD1207 IC -- VCE --1200 --7mA --6mA --5mA --800 --4mA --600 --3mA --2mA --400 --1mA --200 IB=0mA 0 --2 --4 --6 --8 3mA 400 2mA 1mA IB=0mA 2 4 6 8 10 12 Collector-to-Emitter Voltage, VCE -- V ITR08648 IC -- VBE ITR08649 IC -- VBE 1200 2SB892 VCE= --2V 2SD1207 VCE=2V 1000 Collector Current, IC -- mA Collector Current, IC -- mA 600 0 --800 --600 --400 800 600 400 200 --200 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 0 DC Current Gain, hFE 100 7 5 100 7 5 3 2 3 5 7 --1000 2 Collector Current, IC -- mA 3 100 7 5 3 2 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 7 100 2 3 5 7 1000 3 ITR08654 2 3 5 ITR08653 f T -- IC 2SD1207 VCB=10V 7 2 3 5 1000 3 2 3 Collector Current, IC -- mA Gain-Bandwidth Product, f T -- MHz 5 2 ITR08652 2SB892 VCB= --10V 7 10 --10 10 10 5 f T -- IC 1000 2SD1207 VCE=2V 2 2 2 1.2 ITR08651 3 3 7 --100 1.0 5 2 5 0.8 7 3 3 0.6 hFE -- IC 1000 5 2 0.4 Base-to-Emitter Voltage, VBE -- V 2SB892 VCE= --2V 7 10 --10 0.2 ITR08650 hFE -- IC 1000 DC Current Gain, hFE 4mA --12 --1000 Gain-Bandwidth Product, f T -- MHz 800 0 --10 Collector-to-Emitter Voltage, VCE -- V --1200 5mA 200 0 2SD1207 7mA 6mA 1000 Collector Current, IC -- mA Collector Current, IC -- mA --1000 IC -- VCE 1200 2SB892 5 3 2 100 7 5 3 2 10 10 2 3 5 7 100 2 3 5 7 1000 Collector Current, IC -- mA 2 3 ITR08655 No.930-3/5 2SB892 / 2SD1207 Cob -- VCB 2SB892 f=1MHz 7 5 3 2 10 5 3 2 10 7 7 5 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 5 1.0 7 --100 ITR08656 2 3 5 3 2 --10 5 2 --1.0 5 2 --0.1 5 5 2 7 100 ITR08657 2SD1207 IC / IB=20 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 2 10 VCE(sat) -- IC 100 2SB892 IC / IB=20 7 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --100 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SD1207 f=1MHz 7 100 2 10 5 2 1.0 5 2 0.1 5 2 --0.01 --10 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 0.01 10 3 3 2 IC=2A 1m op era ms 3 2 s DC 10 5 0m 10 s 1.0 tio n 0.1 5 3 2 5 7 100 2 3 5 7 1000 2 3 ITR08659 PC -- Ta 1200 Collector Dissipation, PC -- mW ICP=4A 3 Collector Current, IC -- mA 2SB892 / 2SD1207 5 2 ITR08658 ASO 10 Collector Current, IC -- A Cob -- VCB 100 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2 2SB892 / 2SD1207 1000 800 600 400 200 0.01 (For PNP minus sign is omitted.) 5 3 5 7 1.0 2 3 5 7 0 10 2 3 Collector-to-Emitter Voltage, VCE -- 5 7 100 V ITR08661 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08660 No.930-4/5 2SB892 / 2SD1207 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No.930-5/5