2SC5488A Ordering number : ENA1089 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5488A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low-noise : NF=1.0dB typ (f=1GHz). High gain : ⏐S21e⏐2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm). Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit 20 V Collector-to-Emitter Voltage VCBO VCEO 10 V Emitter-to-Base Voltage VEBO 2 V 70 mA Collector Dissipation IC PC 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Collector Current Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current IEBO hFE VEB=1V, IC=0A 10 μA DC Current Gain fT VCE=5V, IC=20mA VCE=5V, IC=20mA Output Capacitance Cob VCB=10V, f=1MHz 0.7 Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.45 Gain-Bandwidth Product Marking : LN 90 5 200 7 GHz 1.2 pF pF Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60408AB TI IM TC-00001389 No. A1089-1/4 2SC5488A Continued from preceding page. Parameter Symbol 2 Forward Transfer Gain ⏐S21e⏐ 1 2 ⏐S21e⏐ 2 VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz NF VCE=5V, IC=7mA, f=1GHz Noise Figure Ratings Conditions min typ 9 Unit max 12 dB 8.5 dB 1.0 1.8 dB Package Dimensions unit : mm (typ) 7029-002 Top View 0.3 1.4 0.25 1.4 0.8 3 2 1 0.1 0.3 0.2 0.07 0.6 0.45 2 1 : Base 2 : Emitter 3 : Collector 0.07 1 3 SANYO : SSFP Bottom View hFE -- IC 3 Gain-Bandwidth Product, fT -- GHz DC Current Gain, hFE 2 100 7 5 3 2 10 7 VCE=5V 10 7 5 3 2 1.0 7 5 5 3 5 7 1.0 2 3 5 7 2 10 3 5 Collector Current, IC -- mA 7 100 2 IT01363 7 1.0 2 3 5 Reverse Transfer Capacitance, Cre -- pF 1.0 7 5 3 2 0.1 7 5 2 10 3 5 7 100 2 IT01364 Cre -- VCB 3 f=1MHz 2 7 Collector Current, IC -- mA Cob -- VCB 3 Output Capacitance, Cob -- pF fT -- IC 2 VCE=5V f=1MHz 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 IT01365 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 IT01366 No. A1089-2/4 2SC5488A NF -- IC VCE=5V f=1GHz Forward Transfer Gain, ⏐S21e⏐2 -- dB f=1GHz Noise Figure, NF -- dB 10 8 6 4 2 12 10 8 6 4 2 0 0 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 2 IT01368 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA PC -- Ta 120 Collector Dissipation, PC -- mW ⏐S21e⏐2 -- IC 14 V CE =5 V 2V 12 5 7 100 2 IT01367 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT01369 S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.786 --40.7 17.507 151.3 0.028 70.1 0.898 --20.4 200 0.677 --72.4 13.998 131.4 0.046 58.0 0.739 --33.4 400 0.546 --112.7 9.061 108.6 0.064 49.6 0.525 --43.7 600 0.492 --135.2 6.442 96.1 0.076 49.3 0.423 --46.7 800 0.473 --150.0 5.005 87.3 0.087 50.8 0.374 --44.4 1000 0.465 --160.0 4.073 80.4 0.099 52.6 0.346 --49.7 1200 0.457 --169.5 3.449 74.0 0.111 54.0 0.332 --51.6 1400 0.451 --176.2 2.989 68.6 0.124 55.2 0.321 --54.1 1600 0.449 177.8 2.658 63.8 0.138 56.6 0.319 --56.2 1800 0.454 172.5 2.378 58.4 0.151 56.7 0.313 --60.0 2000 0.460 167.1 2.154 54.0 0.166 56.7 0.311 --63.2 No. A1089-3/4 2SC5488A S Parameters (Common emitter) VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.601 --65.8 28.967 137.1 0.023 64.1 0.757 --32.9 200 0.497 --103.7 19.309 116.6 0.035 57.0 0.534 --50.3 400 0.435 --139.6 10.891 98.6 0.050 58.7 0.345 --50.3 600 0.419 --156.6 7.461 89.3 0.065 61.3 0.280 --50.7 800 0.414 --166.6 5.695 82.5 0.081 63.1 0.251 --51.3 1000 0.413 --174.0 4.613 77.0 0.098 63.8 0.235 --52.9 1200 0.413 178.6 3.870 71.8 0.114 63.9 0.226 --55.1 1400 0.411 173.8 3.345 66.9 0.131 63.6 0.221 --57.7 1600 0.413 169.6 2.960 62.7 0.148 63.2 0.220 --60.2 1800 0.416 165.1 2.655 58.0 0.165 61.8 0.219 --64.8 2000 0.422 160.3 2.406 54.0 0.182 60.6 0.218 --68.3 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.888 --30.2 9.280 158.6 0.038 73.6 0.949 --15.1 200 0.815 --56.4 8.218 141.3 0.067 60.5 0.849 --26.9 400 0.690 --96.0 6.074 116.7 0.098 45.1 0.657 --41.1 600 0.616 --120.7 4.517 101.4 0.112 38.4 0.539 --47.6 800 0.584 --138.0 3.610 90.4 0.120 35.8 0.475 --51.2 1000 0.566 --150.7 2.995 81.9 0.125 35.7 0.434 --54.5 1200 0.555 --161.2 2.540 74.2 0.131 36.5 0.410 --57.5 1400 0.546 --169.3 2.213 67.5 0.137 38.4 0.393 --60.7 1600 0.541 --176.4 1.982 62.0 0.143 40.7 0.391 --64.0 1800 0.545 177.1 1.774 55.9 0.152 42.5 0.382 --67.8 2000 0.547 170.9 1.614 50.9 0.163 44.7 0.381 --72.1 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice. PS No. A1089-4/4