SANYO 2SC5414A

2SC5414A
Ordering number : ENA1081
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5414A
High-Frequency Low-Noise
Amplifier Applications
Features
•
•
High gain
: ⏐S21e⏐2=9.5dB typ (f=1GHz).
High cut-off frequency : fT=6.7GHz typ.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
20
V
12
V
VEBO
IC
2
100
mA
PC
Tj
400
mW
Junction Temperature
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
V
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
Ratings
min
typ
max
Unit
ICBO
IEBO
VCB=10V, IE=0A
1.0
μA
VEB=1V, IC=0A
10
μA
hFE1
hFE2
VCE=5V, IC=30mA
VCE=5V, IC=70mA
90*
270*
70
Continued on next page.
* : The 2SC5414A is classified by 30mA hFE as follows :
Rank
E
F
hFE
90 to 180
135 to 270
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
93009AB TK IM TC-00002103 No. A1081-1/6
2SC5414A
Continued from preceding page.
Parameter
Symbol
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
Forward Transfer Gain
2
⏐S21e⏐
NF
Noise Figure
Ratings
Conditions
min
VCE=5V, IC=30mA
VCB=5V, f=1MHz
typ
5
6.7
GHz
1.0
VCB=5V, f=1MHz
VCE=5V, IC=30mA, f=1GHz
Unit
max
1.5
0.6
8
9.5
VCE=5V, IC=7mA, f=1GHz
pF
pF
dB
1.1
2.0
dB
Package Dimensions
unit : mm (typ)
7522-003
5.0
4.0
5.0
4.0
14.0
0.6
2.0
0.45
0.5
0.45
0.44
1 2 3
SANYO : NP
1.3
IC -- VCE
50
0.30mA
40
Collector Current, IC -- mA
Collector Current, IC -- mA
0.35mA
0.25mA
0.20mA
30
0.15mA
20
0.10mA
10
0.05mA
IB=0mA
0
0
2
IC -- VBE
100
4
6
8
Collector-to-Emitter Voltage, VCE -- V
10
IT13392
80
60
40
20
V
CE =
5V
2V
1.3
1 : Base
2 : Emitter
3 : Collector
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT13393
No. A1081-2/6
2SC5414A
hFE -- IC
7
fT -- IC
10
Gain-Bandwidth Product, fT -- GHz
5
DC Current Gain, hFE
3
2
VCE=5V
2V
100
7
5
3
2
10
=5V
VCE
5
2V
3
2
1.0
3
5 7 1.0
2
3
5 7 10
2
3
5
7 100
Collector Current, IC -- mA
2
3
2
1.0
3
Reverse Transfer Capacitance, Cre -- pF
5
3
2
1.0
7
5
3
2
7
0.1
2
3
5
7 1.0
2
3
5
7 10
2
Collector-to-Base Voltage, VCB -- V
5
7 100
IT13401
f=1MHz
7
5
3
2
1.0
7
5
3
2
3
7 0.1
2
3
5
7 1.0
Forward Transfer Gain,⏐S21e⏐2 -- dB
6
4
2V
V CE=
5V
2
0
3
5
7 10
2
3
IT13397
C
12
f=1GHz
8
2
Collector-to-Base Voltage, VCB -- V
⏐S21e⏐2 -- I
IT13396
NF -- IC
10
Noise Figure, NF -- dB
3
0.1
7 0.1
f=1GHz
V
V CE=5
10
2V
8
6
4
2
0
7
2
1.0
3
5
7
2
10
3
Collector Current, IC -- mA
5
7 100
IT13399
PC -- Ta
500
Collector Dissipation, PC -- mW
2
10
Cre -- VCB
10
f=1MHz
7
5
Collector Current, IC -- mA
IT13394
Cob -- VCB
10
Output Capacitance, Cob -- pF
7
7
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT13402
400
300
200
100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13403
No. A1081-3/6
2SC5414A
S Parameters (Common emitter)
VCE=2V, IC=5mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.789
--46.1
12.790
142.7
0.041
66.1
0.870
--25.4
200
0.604
--80.1
9.631
117.8
0.063
53.1
0.691
--39.5
400
0.404
--123.7
5.802
90.2
0.090
44.6
0.510
--51.7
600
0.331
--153.8
4.101
72.4
0.112
42.2
0.444
--58.8
800
0.297
--177.9
3.180
58.0
0.137
39.3
0.419
--66.4
1000
0.281
160.9
2.642
45.5
0.163
35.7
0.413
--74.1
1200
0.275
140.4
2.254
32.7
0.190
31.0
0.410
--82.5
1400
0.277
122.6
1.983
21.5
0.218
26.0
0.405
--90.9
1600
0.281
103.9
1,787
10.3
0.247
20.5
0.395
--99.8
1800
0.295
89.0
1.626
--0.1
0.278
14.4
0.390
--108.3
2000
0.314
73.5
1.511
--10.3
0.311
7.7
0.380
--117.5
VCE=2V, IC=10mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.638
--60.1
18.641
131.8
0.036
63.1
0.754
--33.9
200
0.438
--95.8
12.165
107.7
0.054
55.5
0.549
--45.7
400
0.289
--138.8
6.728
84.2
0.083
53.2
0.392
--53.9
600
0.245
--168.0
4.654
69.1
0.113
50.5
0.348
--59.7
800
0.227
170.3
3.575
56.2
0.146
45.7
0.336
--67.3
1000
0.221
150.3
2.950
44.5
0.177
40.1
0.335
--75.3
1200
0.215
130.3
2.520
32.5
0.221
30.9
0.332
--86.7
1400
0.218
113.3
2.203
21.6
0.240
27.0
0.331
--92.3
1600
0.231
96.2
1.978
11.2
0.272
20.1
0.320
--101.1
1800
0.243
80.8
1.805
1.2
0.304
13.0
0.314
--109.7
2000
0.267
66.9
1.668
--8.9
0.336
5.5
0.306
--118.6
VCE=2V, IC=20mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.476
--75.8
22.939
121.7
0.031
62.9
0.633
--40.4
200
0.317
--113.1
13.544
100.3
0.047
61.2
0.427
--48.3
400
0.227
--155.0
7.193
80.3
0.081
59.5
0.319
--53.3
600
0.206
178.6
4.913
66.5
0.116
55.1
0.293
--59.0
800
0.195
158.2
3.764
54.3
0.151
49.1
0.289
--67.1
1000
0.194
139.7
3.091
43.4
0.186
42.4
0.291
--75.4
1200
0.198
121.4
2.632
32.0
0.220
34.9
0.294
--84.4
1400
0.204
105.8
2.305
21.3
0.253
27.5
0.290
--93.3
1600
0.213
89.2
2.066
11.2
0.285
20.1
0.281
--102.3
1800
0.230
75.2
1.881
1.5
0.318
12.5
0.275
--111.0
2000
0.252
62.9
1.742
--8.4
0.350
4.6
0.264
--120.0
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
VCE=2V, IC=30mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
100
0.403
--88.7
23.847
116.6
0.028
63.5
0.561
--42.5
200
0.284
--126.8
13.541
96.9
0.045
63.7
0.380
--47.5
400
0.228
--167.6
7.074
78.2
0.081
61.5
0.295
--51.3
600
0.217
169.3
4.827
65.0
0.116
56.8
0.275
--57.2
800
0.213
151.0
3.687
52.8
0.153
50.3
0.276
--66.0
1000
0.211
134.3
3.034
42.2
0.188
43.2
0.281
--74.9
1200
0.216
117.8
2.579
30.8
0.223
35.5
0.283
--84.2
1400
0.222
103.1
2.262
20.4
0.256
27.9
0.280
--93.2
1600
0.238
87.6
2.029
10.3
0.289
20.3
0.271
--102.4
1800
0.248
74.2
1.840
0.3
0.321
12.6
0.265
--111.2
2000
0.271
61.6
1.706
--9.7
0.354
4.5
0.254
--120.5
No. A1081-4/6
2SC5414A
S Parameters (Common emitter)
VCE=5V, IC=5mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.807
--41.4
12.983
145.1
0.032
68.1
0.899
--20.6
200
0.627
--72.5
10.034
120.7
0.052
55.7
0.748
--32.3
400
0.399
--114.4
6.208
92.5
0.074
47.6
0.590
--42.7
600
0.314
--144.0
4.422
74.9
0.093
45.2
0.532
--49.4
800
0.266
--169.8
3.425
60.3
0.115
42.9
0.514
--56.8
1000
0.242
168.7
2.831
47.9
0.137
39.8
0.512
--64.6
1200
0.230
146.1
2.422
35.3
0.161
35.8
0.510
--72.6
1400
0.227
125.8
2.121
24.0
0.186
31.3
0.508
--80.8
1600
0.237
105.7
1.902
13.1
0.212
26.4
0.504
--89.1
1800
0.249
88.5
1.725
3.1
0.240
21.0
0.501
--97.2
2000
0.273
72.7
1.595
--7.2
0.271
14.8
0.497
--106.0
VCE=5V, IC=10mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.664
--52.5
19.156
134.9
0.029
65.7
0.807
--26.7
200
0.450
--85.2
13.004
110.4
0.044
58.6
0.621
--36.3
400
0.264
--124.5
7.320
86.3
0.069
55.5
0.490
--42.7
600
0.206
--153.2
5.075
70.9
0.095
53.3
0.450
--48.6
800
0.175
--178.9
3.884
58.1
0.122
48.7
0.444
--56.0
1000
0.163
159.7
3.190
46.8
0.150
43.8
0.446
--64.0
1200
0.156
135.8
2.715
35.0
0.178
37.8
0.446
--72.4
1400
0.158
115.9
2.376
24.3
0.204
31.8
0.448
--80.6
1600
0.174
95.5
2.127
14.0
0.233
25.5
0.439
--88.9
1800
0.188
77.7
1.938
4.1
0.262
19.0
0.434
--96.9
2000
0.212
62.7
1.788
--5.6
0.292
12.0
0.431
--105.3
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.423
--71.0
26.259
120.2
0.024
66.3
0.647
--32.7
200
0.258
--103.4
15.300
99.6
0.038
65.6
0.482
--36.2
400
0.155
--145.0
8.070
80.5
0.068
63.8
0.405
--39.6
600
0.129
173.2
5.493
67.5
0.098
59.1
0.388
--45.9
800
0.119
161.6
4.203
55.9
0.129
53.1
0.390
--54.2
1000
0.116
140.1
3.436
45.4
0.160
46.5
0.396
--62.7
1200
0.119
117.4
2.914
34.2
0.190
39.4
0.401
--71.8
1400
0.129
98.0
2.545
24.3
0.219
32.5
0.398
--80.2
1600
0.146
79.7
2.284
14.2
0.249
25.3
0.393
--88.6
1800
0.160
65.1
2.064
4.9
0.278
18.2
0.389
--96.9
2000
0.187
54.4
1.913
--4.9
0.308
10.7
0.386
--105.3
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
VCE=5V, IC=50mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
100
0.381
--82.7
25.958
114.6
0.023
65.6
0.611
--32.2
200
0.251
--120.2
14.443
95.9
0.037
65.8
0.465
--34.5
400
0.185
--164.6
7.561
78.0
0.067
64.0
0.405
--38.7
600
0.174
170.5
5.153
64.8
0.096
59.6
0.396
--46.0
800
0.163
149.4
3.904
52.8
0.127
53.5
0.401
--54.9
1000
0.167
130.7
3.194
41.9
0.157
47.1
0.406
--63.5
1200
0.176
112.8
2.696
31.0
0.187
39.8
0.410
--72.9
1400
0.184
96.6
2.358
20.5
0.216
32.9
0.409
--81.5
1600
0.197
80.7
2.115
10.1
0.246
25.9
0.404
--90.3
1800
0.214
68.1
1.908
0.1
0.275
18.8
0.400
--98.2
2000
0.243
55.0
1.766
--9.6
0.305
11.1
0.392
--106.2
No. A1081-5/6
2SC5414A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of September, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1081-6/6