MICROCHIP MCP14E3EP

MCP14E3/MCP14E4/MCP14E5
4.0A Dual High-Speed Power MOSFET Drivers With Enable
Features
General Description
• High Peak Output Current: 4.0A (typical)
• Independent Enable Function for Each Driver
Output
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2200 pF in 15 ns (typical)
- 5600 pF in 26 ns (typical)
• Short Delay Times: 50 ns (typical)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• Space-Saving Packages:
- 8-Lead 6x5 DFN, PDIP, SOIC
The MCP14E3/MCP14E4/MCP14E5 devices are a
family of 4.0A buffers/MOSFET drivers. Dual-inverting,
dual-noninvertering, and complementary outputs are
standard logic options offered.
Additional control of the MCP14E3/MCP14E4/
MCP14E5 outputs is allowed by the use of separate
enable functions. The ENB_A and ENB_B pins are
active high and are internally pulled up to VDD. The pins
maybe left floating for standard operation.
The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0A
driver family is offered in both surface-mount and pinthrough-hole packages with a -40°C to +125°C
temperature rating. The low thermal resistance of the
thermally enhanced DFN package allows for greater
power dissipation capability for driving heavier
capacitive or resistive loads.
Applications
•
•
•
•
The MCP14E3/MCP14E4/MCP14E5 drivers are
capable of operating from a 4.5V to 18V single power
supply and can easily charge and discharge 2200 pF
gate capacitance in under 15 ns (typical). They provide
low impedance in both the ON and OFF states to
ensure the MOSFET’s intended state will not be
affected, even by large transients. The MCP14E3/
MCP14E4/MCP14E5 inputs may be driven directly
from either TTL or CMOS (2.4V to 18V).
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Motor and Solenoid Drive
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
1.5A of reverse current being forced back into their
outputs. All terminals are fully protect against
Electrostatic Discharge (ESD) up to 4 kV.
Package Types
MCP14E4
8-Pin
MCP14E5
MCP14E3
PDIP/SOIC
2
7
6
4
5
OUT A
VDD
OUT B
OUT A
VDD
OUT B
OUT A
VDD
OUT B
IN A
3
ENB_B
ENB_B
ENB_B
OUT A
OUT A
VDD
VDD
OUT B
OUT B
GND
VDD
IN B
OUT B
2
OUT A
5
ENB_A
6
ENB_B
7
ENB_B
8
ENB_B
4
8
3
1
1
ENB_A
IN A
GND
IN B
MCP14E4
MCP14E3
MCP14E5
8-Pin
6x5 DFN (1)
Note 1: Exposed pad of the DFN package is electrically isolated.
© 2008 Microchip Technology Inc.
DS22062B-page 1
MCP14E3/MCP14E4/MCP14E5
Functional Block Diagram
VDD
Inverting
VDD
Output
Internal
Pull-up
Non-inverting
Enable
4.7 V
Input
Effective
Input C = 20 pF
(Each Input)
4.7 V
MCP14E3 Dual Inverting
MCP14E4 Dual Noninverting
MCP14E5 One Inverting, One Noninverting
GND
DS22062B-page 2
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (VDD + 0.3V) to (GND – 5V)
Enable Voltage .............................(VDD + 0.3V) to (GND - 5V)
Input Current (VIN>VDD)................................................50 mA
Package Power Dissipation (TA = 50°C)
8L-DFN ....................................................................... Note 3
8L-PDIP ........................................................................1.10W
8L-SOIC .....................................................................665 mW
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’, High Input Voltage
VIH
2.4
1.5
—
V
Logic ‘0’, Low Input Voltage
VIL
—
1.3
0.8
V
Input Current
IIN
–1
—
1
µA
Input Voltage
VIN
-5
—
VDD+0.3
V
VOH
VDD – 0.025
—
—
V
DC Test
Input
0V ≤ VIN ≤ VDD
Output
High Output Voltage
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
2.5
3.5
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
2.5
3.0
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
4.0
—
A
VDD = 18V (Note 2)
Latch-Up Protection Withstand Reverse Current
IREV
—
>1.5
—
A
Duty cycle ≤ 2%, t ≤ 300 µs
Rise Time
tR
—
15
30
ns
Figure 4-1, Figure 4-2
CL = 2200 pF
Fall Time
tF
—
18
30
ns
Figure 4-1, Figure 4-2
CL = 2200 pF
Propagation Delay Time
tD1
—
46
55
ns
Figure 4-1, Figure 4-2
Propagation Delay Time
tD2
—
50
55
ns
Figure 4-1, Figure 4-2
Switching Time (Note 1)
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
VEN_H
1.60
1.90
2.90
V
VDD = 12V, LO to HI Transition
Low-Level Input Voltage
VEN_L
1.30
2.20
2.40
V
VDD = 12V, HI to LO Transition
Hysteresis
VHYST
0.10
0.30
0.60
V
Enable Leakage Current
IENBL
40
85
115
µA
VDD = 12V,
ENB_A = ENB_B = GND
Propagation Delay Time
tD3
—
60
—
ns
Figure 4-3 (Note 1)
Propagation Delay Time
tD4
—
50
—
ns
Figure 4-3 (Note 1)
Note 1:
2:
3:
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
© 2008 Microchip Technology Inc.
DS22062B-page 3
MCP14E3/MCP14E4/MCP14E5
DC CHARACTERISTICS (NOTE 2) (CONTINUED)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Supply Voltage
VDD
Supply Current
IDD
Units
Conditions
4.5
—
18.0
V
—
1.60
2.00
mA
VIN_A = 3V, VIN_B = 3V,
ENB_A = ENB_B = High
IDD
—
0.60
0.90
mA
VIN_A = 0V, VIN_B = 0V,
ENB_A = ENB_B = High
IDD
—
1.20
1.40
mA
VIN_A = 3V, VIN_B = 0V,
ENB_A = ENB_B = High
IDD
—
1.20
1.40
mA
VIN_A = 0V, VIN_B = 3V,
ENB_A = ENB_B = High
IDD
—
1.40
1.80
mA
VIN_A = 3V, VIN_B = 3V,
ENB_A = ENB_B = Low
IDD
—
0.55
0.75
mA
VIN_A = 0V, VIN_B = 0V,
ENB_A = ENB_B = Low
IDD
—
1.00
1.20
mA
VIN_A = 3V, VIN_B = 0V,
ENB_A = ENB_B = Low
IDD
—
1.00
1.20
mA
VIN_A = 0V, VIN_B = 3V,
ENB_A = ENB_B = Low
Power Supply
Note 1:
2:
3:
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
DS22062B-page 4
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Logic ‘1’, High Input Voltage
VIH
2.4
Logic ‘0’, Low Input Voltage
VIL
—
Input Current
IIN
High Output Voltage
Low Output Voltage
Conditions
—
—
V
—
0.8
V
–10
—
+10
µA
0V ≤ VIN ≤ VDD
VOH
VDD – 0.025
—
—
V
DC TEST
VOL
—
—
0.025
V
DC TEST
Output Resistance, High
ROH
—
3.0
6.0
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
3.0
5.0
Ω
IOUT = 10 mA, VDD = 18V
Rise Time
tR
—
25
40
ns
Figure 4-1, Figure 4-2
CL = 2200 pF
Fall Time
tF
—
28
40
ns
Figure 4-1, Figure 4-2
CL = 2200 pF
Delay Time
tD1
—
50
70
ns
Figure 4-1, Figure 4-2
Delay Time
tD2
—
50
70
ns
Figure 4-1, Figure 4-2
VEN_H
1.60
2.20
2.90
V
VDD = 12V, LO to HI Transition
Low-Level Input Voltage
VEN_L
1.30
1.80
2.40
V
VDD = 12V, HI to LO Transition
Hysteresis
VHYST
—
0.40
—
V
Enable Leakage Current
IENBL
40
87
115
µA
VDD = 12V, ENB_A = ENB_B = GND
Propagation Delay Time
tD3
—
50
—
ns
Figure 4-3
Propagation Delay Time
tD4
—
60
—
ns
Figure 4-3
Supply Voltage
VDD
4.5
—
18.0
V
Supply Current
IDD
—
2.0
3.0
mA
VIN_A = 3V, VIN_B = 3V,
ENB_A = ENB_B = High
IDD
—
0.8
1.1
mA
VIN_A = 0V, VIN_B = 0V,
ENB_A = ENB_B = High
IDD
—
1.5
2.0
mA
VIN_A = 3V, VIN_B = 0V,
ENB_A = ENB_B = High
IDD
—
1.5
2.0
mA
VIN_A = 0V, VIN_B = 3V,
ENB_A = ENB_B = High
IDD
—
1.8
2.8
mA
VIN_A = 3V, VIN_B = 3V,
ENB_A = ENB_B = Low
IDD
—
0.6
0.8
mA
VIN_A = 0V, VIN_B = 0V,
ENB_A = ENB_B = Low
IDD
—
1.1
1.8
mA
VIN_A = 3V, VIN_B = 0V,
ENB_A = ENB_B = Low
IDD
—
1.1
1.8
mA
VIN_A = 0V, VIN_B = 3V,
ENB_A = ENB_B = Low
Input
Output
Switching Time (Note 1)
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
Power Supply
Note 1:
Switching times ensured by design.
© 2008 Microchip Technology Inc.
DS22062B-page 5
MCP14E3/MCP14E4/MCP14E5
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Specified Temperature Range
TA
–40
Maximum Junction Temperature
TJ
—
—
+125
°C
—
+150
°C
Storage Temperature Range
TA
–65
—
+150
°C
Thermal Resistance, 8L-6x5 DFN
θJA
—
35.7
—
°C/W
Thermal Resistance, 8L-PDIP
θJA
—
89.3
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
149.5
—
°C/W
Conditions
Temperature Ranges
Package Thermal Resistances
DS22062B-page 6
Typical four-layer board with
vias to ground plane
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
100
120
10,000 pF
10,000 pF
80
Fall Time (ns)
Rise Time (ns)
4,700 pF
2,200 pF
6,800 pF
100 pF
60
40
20
0
90
4,700 pF
2,200 pF
6,800 pF
100 pF
60
30
0
4
6
8
10
12
14
16
18
4
6
8
Supply Voltage (V)
FIGURE 2-1:
Voltage.
10
12
14
16
18
Supply Voltage (V)
Rise Time vs. Supply
FIGURE 2-4:
Voltage.
60
Fall Time vs. Supply
60
12V
50
40
30
5V
20
18V
Fall Time (ns)
Rise Time (ns)
50
12V
40
18V
30
5V
20
10
10
0
100
1000
0
100
10000
1000
Capacitive Load (pF)
Capacitive Load (pF)
FIGURE 2-2:
Load.
Rise Time vs. Capacitive
22
20
Time (ns)
Fall Time vs. Capacitive
60
VDD = 18V
tFALL
18
FIGURE 2-5:
Load.
tRISE
16
14
12
10
Propagation Delay (ns)
24
10000
VDD = 12V
55
tD1
50
45
tD2
40
35
-40 -25 -10
5
20 35 50 65 80 95 110 125
4
5
Temperature (°C)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
© 2008 Microchip Technology Inc.
6
7
8
9
10
11
12
Input Amplitude (V)
FIGURE 2-6:
Amplitude.
Propagation Delay vs. Input
DS22062B-page 7
MCP14E3/MCP14E4/MCP14E5
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
80
120
Propagatin Delay (ns)
Propagation Delay (ns)
140
tD1
100
80
tD2
60
40
20
VDD = 12V
tD1
70
60
tD2
50
40
4
6
8
10
12
14
16
18
-40 -25 -10
5
Supply Voltage (V)
Temperature (°C)
Propagation Delay Time vs.
FIGURE 2-10:
Temperature.
1.4
1.8
1.2
1.6
1.0
Quiescent Current (mA)
Quiescent Current (mA)
FIGURE 2-7:
Supply Voltage.
Input = 1
0.8
0.6
Input = 0
0.4
0.2
0.0
Propagation Delay Time vs.
VDD = 18V
Input = 1
1.4
1.2
1.0
0.8
Input = 0
0.6
0.4
0.2
4
6
8
10
12
14
16
18
-40 -25 -10
5
Supply Voltage (V)
FIGURE 2-8:
Supply Voltage.
7
TA = 125°C
5
4
3
TA = 25°C
2
Quiescent Current vs.
8
ROUT-LO (Ω)
ROUT-HI (Ω)
FIGURE 2-11:
Temperature.
VIN = 0V (MCP14E3)
VIN = 5V (MCP14E4)
7
20 35 50 65 80 95 110 125
Temperature (°C)
Quiescent Current vs.
8
6
20 35 50 65 80 95 110 125
VIN = 5V (MCP14E3)
VIN = 0V (MCP14E4)
TA = 125°C
6
5
4
TA = 25°C
3
2
1
1
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-9:
Output Resistance (Output
High) vs. Supply Voltage.
DS22062B-page 8
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-12:
Output Resistance (Output
Low) vs. Supply Voltage.
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
120
VDD = 18V
100
100 kHz
80
400 kHz
200 kHz
60
40
VDD = 18V
50 kHz
Supply Current (mA)
Supply Current (mA)
120
650 kHz
20
0
100
6,800 pF
80
4,700 pF
60
2,200 pF
40
20
100 pF
0
1000
10000
10
Capacitive Load (pF)
FIGURE 2-13:
Capacitive Load.
Supply Current vs.
FIGURE 2-16:
Frequency.
70
VDD = 12V
50 kHz
60
100 kHz
50
400 kHz
40
200 kHz
30
650 kHz
20
10
0
100
VDD = 12V
1000
50
4,700 pF
40
30
2,200 pF
20
10
10000
100 pF
10
Supply Current vs.
FIGURE 2-17:
Frequency.
35
VDD = 6V
50 kHz
30
100 kHz
25
400 kHz
20
200 kHz
15
650 kHz
5
0
100
1000
Supply Current vs.
VDD = 6V
10,000 pF
30
6,800 pF
25
20
4,700 pF
15
2,200 pF
10
5
100 pF
0
1000
10000
10
Capacitive Load (pF)
FIGURE 2-15:
Capacitive Load.
100
Frequency (kHz)
Supply Current (mA)
Supply Current (mA)
10,000 pF
6,800 pF
0
FIGURE 2-14:
Capacitive Load.
10
1000
Supply Current vs.
60
Capacitive Load (pF)
35
100
Frequency (kHz)
Supply Current (mA)
Supply Current (mA)
70
10,000 pF
100
Supply Current vs.
© 2008 Microchip Technology Inc.
100
1000
Frequency (kHz)
FIGURE 2-18:
Frequency.
Supply Current vs.
DS22062B-page 9
MCP14E3/MCP14E4/MCP14E5
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
0.7
VDD = 18V
1.9
1.7
VHI
Enable Hysteresis (V)
Input Threshold (V)
2.1
VLO
1.5
1.3
1.1
0.9
0.7
VDD = 12V
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
Temperature (°C)
FIGURE 2-19:
Temperature.
FIGURE 2-22:
Temperature.
Input Threshold vs.
Crossover Energy (A*sec)
Input Threshold (V)
Enable Hysteresis vs.
1E-06
1.8
VHI
1.6
VLO
1.4
1.2
1.0
4
6
8
10
12
14
16
1E-07
1E-08
1E-09
18
4
6
Supply Voltage (V)
FIGURE 2-20:
Voltage.
Input Threshold vs. Supply
Enable Threshold (V)
VDD = 12V
2.9
VEN_H
Note:
10
12
14
16
18
The values on this graph represent the
loss seen by both drivers in a package
during one complete cycle.
For a single driver, divide the stated
value by 2.
For a signal transition of a single driver,
divide the state value by 4.
FIGURE 2-23:
Supply Voltage.
2.3
2.1
8
Supply Voltage (V)
3.1
2.5
20 35 50 65 80 95 110 125
Temperature (°C)
2.0
2.7
5
VEN_L
Crossover Energy vs.
1.9
1.7
1.5
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
FIGURE 2-21:
Temperature.
DS22062B-page 10
Enable Threshold vs.
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
8-Pin
PDIP, SOIC
8-Pin
6x5 DFN
Symbol
1
1
ENB_A
2
2
IN A
Input A
3
3
GND
Ground
4
4
IN B
Input B
5
5
OUT B
6
6
VDD
7
7
OUT A
8
8
ENB_B
—
PAD
NC
Note:
3.1
Description
Output A Enable
Output B
Supply Input
Output A
Output B Enable
Exposed Metal Pad
Duplicate pins must be connected for proper operation.
Control Inputs A and B
The MOSFET driver inputs are a high-impedance TTL/
CMOS compatible input. The inputs also have hysteresis between the high and low input levels, allowing
them to be driven from slow rising and falling signals
and to provide noise immunity.
3.2
Outputs A and B
Outputs A and B are CMOS push-pull outputs that are
capable of sourcing and sinking 4.0A of peak current
(VDD = 18V). The low output impedance ensures the
gate of the MOSFET will stay in the intended state even
during large transients. These outputs also have a
reverse latch-up rating of 1.5A.
3.3
Supply Input (VDD)
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local ceramic capacitor.
This bypass capacitor provides a localized low-impedance path for the peak currents that are to be provided
to the load.
3.4
3.5
Enable A (ENB_A)
The ENB_A pin is the enable control for Output A. This
enable pin is internally pulled up to VDD for active high
operation and can be left floating for standard
operation. When the ENB_A pin is pulled below the
enable pin Low Level Input Voltage (VEN_L), Output A
will be in the off state regardless of the input pin state.
3.6
Enable B (ENB_B)
The ENB_B pin is the enable control for Output B. This
enable pin is internally pulled up to VDD for active high
operation and can be left floating for standard
operation. When the ENB_B pin is pulled below the
enable pin Low-Level Input Voltage (VEN_L), Output B
will be in the off state regardless of the input pin state.
3.7
DFN Exposed Pad
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
Ground (GND)
Ground is the device return pin. The ground pin(s)
should have a low impedance connection to the bias
supply source return. High peak currents will flow out
the ground pin(s) when the capacitive load is being
discharged.
© 2008 Microchip Technology Inc.
DS22062B-page 11
MCP14E3/MCP14E4/MCP14E5
4.0
APPLICATION INFORMATION
4.1
General Information
VDD = 18V
MOSFET drivers are high-speed, high current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching power
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A MOSFET driver like the MCP14E3/MCP14E4/MCP14E5
family can be used to provide additional source/sink
current capability.
An additional degree of control has been added to the
MCP14E3/MCP14E4/MCP14E5 family. There are
separate enable functions for each driver that allow for
the immediate termination of the output pulse
regardless of the state of the input signal.
4.2
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the
drivers rise time (tR), fall time (tF), and propagation
delays (tD1 and tD2). The MCP14E3/MCP14E4/
MCP14E5 family of drivers can typically charge and
discharge a 2200 pF load capacitance in 15 ns along
with a typical matched propagation delay of 50 ns.
Figure 4-1 and Figure 4-2 show the test circuit and
timing waveform used to verify the MCP14E3/
MCP14E4/MCP14E5 timing.
0.1 µF
Ceramic
Output
CL = 2200 pF
Input
MCP14E3
(1/2 MCP14E5)
+5V
90%
Input
0V
10%
18V
tD1
tF
tD2
tR
90%
90%
Output
0V
FIGURE 4-1:
Waveform.
DS22062B-page 12
10%
Output
CL = 2200 pF
Input
MCP14E4
(1/2 MCP14E5)
+5V
90%
0V
10%
18V
tD1 90%
Output
10%
0V
FIGURE 4-2:
Waveform.
4.3
tR
tD2
90%
tF
10%
Non-Inverting Driver Timing
Enable Function
The ENB_A and ENB_B enable pins allow for independent control of OUT A and OUT B respectively. They
are active high and are internally pulled up to VDD so
that the default state is to enable the driver. These pins
can be left floating for normal operation.
VDD = 18V
Input
Input
0.1 µF
Ceramic
Input
MOSFET Driver Timing
1 µF
1 µF
10%
Inverting Driver Timing
When an enable pin voltage is above the enable pin
high threshold voltage, VEN_H (2.4V typical), that driver
output is enabled and allowed to react to changes in
the INPUT pin voltage state. Likewise, when the enable
pin voltage falls below the enable pin low threshold
voltage, VEN_L (2.0V typical), that driver output is disabled and does not respond the changes in the INPUT
pin voltage state. When the driver is disabled, the output goes to a low state. Refer to Table 4-1 for enable
pin logic. The threshold voltages of the enable function
are compatible with logic levels. Hysteresis is provided
to help increase the noise immunity of the enable
function, avoiding false triggers of the enable signal
during driver switching. For robust designs, it is
recommended that the slew rate of the enable pin
signal be greater than 1 V/ns.
There are propagation delays associated with the
driver receiving an enable signal and the output
reacting. These propagation delays, tD3 and tD4, are
graphically represented in Figure 4-3.
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
TABLE 4-1:
ENABLE PIN LOGIC
MCP14E3
ENB_A
ENB_B
IN A
IN B
OUT A
H
H
H
H
H
H
H
L
H
H
L
H
H
H
L
L
L
L
X
X
MCP14E4
MCP14E5
OUT B
OUT A
OUT B
OUT A
OUT B
L
L
H
H
L
H
L
H
H
L
L
L
H
L
L
H
H
H
H
H
L
L
H
L
L
L
L
L
L
L
Placing a ground plane beneath the MCP14E3/
MCP14E4/MCP14E5 will help as a radiated noise
shield as well as providing some heat sinking for power
dissipated within the device.
5V
ENB_x
VEN_H
4.6
VEN_L
0V
tD3
Power Dissipation
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
tD4
VDD
EQUATION 4-1:
90%
OUT x
P T = P L + P Q + P CC
Where:
10%
4.4
Enable Timing Waveform.
Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, 2.5A are needed
to charge a 2200 pF load with 18V in 16 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and low
ESR film capacitor are recommended to be placed in
parallel between the driver VDD and GND. A 1.0 µF low
ESR film capacitor and a 0.1 µF ceramic capacitor
should be used. These capacitors should be placed
close to the driver to minimized circuit board parasitics
and provide a local source for the required current.
4.5
PCB Layout Considerations
=
Total power dissipation
PL
=
Load power dissipation
PQ
=
Quiescent power dissipation
PCC
=
Operating power dissipation
0V
FIGURE 4-3:
PT
4.6.1
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
EQUATION 4-2:
P L = f × C T × V DD
2
Where:
f
=
Switching frequency
CT
=
Total load capacitance
VDD
=
MOSFET driver supply voltage
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
robustness of design. PCB trace loop area and
inductance should be minimized by the use of ground
planes or trace under MOSFET gate drive signals,
separate analog and power grounds, and local driver
decoupling.
© 2008 Microchip Technology Inc.
DS22062B-page 13
MCP14E3/MCP14E4/MCP14E5
4.6.2
QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw of the MCP14E3/MCP14E4/MCP14E5
depends upon the state of the input and enable pins.
Refer to the DC Characteristic table for the quiescent
current draw for specific combinations of input and
enable pin states. The quiescent power dissipation is:
EQUATION 4-3:
P Q = ( I QH × D + I QL × ( 1 – D ) ) × V DD
Where:
IQH
=
Quiescent current in the high
state
D
=
Duty cycle
IQL
=
Quiescent current in the low
state
VDD
=
MOSFET driver supply voltage
4.6.3
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describes as:
EQUATION 4-4:
P CC = CC × f × V DD
Where:
CC
=
Cross-conduction constant
(A*sec)
f
=
Switching frequency
VDD
=
MOSFET driver supply voltage
DS22062B-page 14
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
5.0
PACKAGING INFORMATION
5.1
Package Marking Information (Not to Scale)
8-Lead DFN-S (6x5)
XXXXXXX
XXXXXXX
XXYYWW
NNN
MCP14E3
e3
E/MF^^
0814
256
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
MCP14E3
e3
E/P^^256
0814
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
Example:
Example:
MCP14E3E
SN^^0814
e3
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3)
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2008 Microchip Technology Inc.
DS22062B-page 15
MCP14E3/MCP14E4/MCP14E5
8-Lead Plastic Dual Flat, No Lead Package (MF) – 6x5 mm Body [DFN-S]
PUNCH SINGULATED
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
D1
e
b
N
L
N
K
E
E2
E1
EXPOSED
PAD
NOTE 1
2
2
1
1
NOTE 1
D2
TOP VIEW
BOTTOM VIEW
φ
A2
A
A1
A3
NOTE 2
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
N
NOM
MAX
8
Pitch
e
Overall Height
A
–
1.27 BSC
0.85
Molded Package Thickness
A2
–
0.65
0.80
Standoff
A1
0.00
0.01
0.05
Base Thickness
A3
0.20 REF
Overall Length
D
4.92 BSC
Molded Package Length
D1
Exposed Pad Length
D2
1.00
4.67 BSC
3.85
4.00
4.15
Overall Width
E
5.99 BSC
Molded Package Width
E1
Exposed Pad Width
E2
2.16
2.31
Contact Width
b
0.35
0.40
0.47
Contact Length
L
0.50
0.60
0.75
Contact-to-Exposed Pad
K
0.20
–
–
Model Draft Angle Top
φ
–
–
12°
5.74 BSC
2.46
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-113B
DS22062B-page 16
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
8-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
N
NOTE 1
E1
1
3
2
D
E
A2
A
L
A1
c
e
eB
b1
b
Units
Dimension Limits
Number of Pins
INCHES
MIN
N
NOM
MAX
8
Pitch
e
Top to Seating Plane
A
–
–
.210
Molded Package Thickness
A2
.115
.130
.195
Base to Seating Plane
A1
.015
–
–
Shoulder to Shoulder Width
E
.290
.310
.325
Molded Package Width
E1
.240
.250
.280
Overall Length
D
.348
.365
.400
Tip to Seating Plane
L
.115
.130
.150
Lead Thickness
c
.008
.010
.015
b1
.040
.060
.070
b
.014
.018
.022
eB
–
–
Upper Lead Width
Lower Lead Width
Overall Row Spacing §
.100 BSC
.430
Notes:
1. Pin 1 visual index feature may vary, but must be located with the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-018B
© 2008 Microchip Technology Inc.
DS22062B-page 17
MCP14E3/MCP14E4/MCP14E5
8-Lead Plastic Small Outline (SN) – Narrow, 3.90 mm Body [SOIC]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
e
N
E
E1
NOTE 1
1
2
3
α
h
b
h
A2
A
c
φ
L
A1
L1
Units
Dimension Limits
Number of Pins
β
MILLIMETERS
MIN
N
NOM
MAX
8
Pitch
e
Overall Height
A
–
1.27 BSC
–
Molded Package Thickness
A2
1.25
–
–
Standoff §
A1
0.10
–
0.25
Overall Width
E
Molded Package Width
E1
3.90 BSC
Overall Length
D
4.90 BSC
1.75
6.00 BSC
Chamfer (optional)
h
0.25
–
0.50
Foot Length
L
0.40
–
1.27
Footprint
L1
1.04 REF
Foot Angle
φ
0°
–
8°
Lead Thickness
c
0.17
–
0.25
Lead Width
b
0.31
–
0.51
Mold Draft Angle Top
α
5°
–
15°
Mold Draft Angle Bottom
β
5°
–
15°
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-057B
DS22062B-page 18
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
/HDG3ODVWLF6PDOO2XWOLQH61±1DUURZPP%RG\>62,&@
1RWH
)RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW
KWWSZZZPLFURFKLSFRPSDFNDJLQJ
© 2008 Microchip Technology Inc.
DS22062B-page 19
MCP14E3/MCP14E4/MCP14E5
NOTES:
DS22062B-page 20
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
APPENDIX A:
REVISION HISTORY
Revision B (April 2008)
The following is the list of modifications:
1.
Correct examples in Product identification
System page.
Revision A (September 2007)
• Original Release of this Document.
© 2008 Microchip Technology Inc.
DS22062B-page 21
MCP14E3/MCP14E4/MCP14E5
NOTES:
DS22062B-page 22
© 2008 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
XX
Temperature
Range
Device:
Package
MCP14E3: 4.0A Dual MOSFET Driver, Inverting
MCP14E3T: 4.0A Dual MOSFET Driver, Inverting
Tape and Reel
MCP14E4: 4.0A Dual MOSFET Driver, Non-Inverting
MCP14E4T: 4.0A Dual MOSFET Driver, Non-Inverting
Tape and Reel
MCP14E5: 4.0A Dual MOSFET Driver, Complementary
MCP14E5T: 4.0A Dual MOSFET Driver, Complementary
Tape and Reel
Temperature Range:
E
Package: *
MF
P
SN
=
-40°C to +125°C
= Dual, Flat, No-Lead (6x5 mm Body), 8-lead
= Plastic DIP, (300 mil body), 8-lead
= Plastic SOIC (150 mil Body), 8-Lead
Examples:
a)
MCP14E3-E/MF:
4.0A Dual Inverting
MOSFET Driver,
8LD DFN package.
b)
MCP14E3-E/P:
4.0A Dual Inverting
MOSFET Driver,
8LD PDIP package.
c)
MCP14E3-E/SN:
4.0A Dual Inverting
MOSFET Driver,
8LD SOIC package.
a)
MCP14E4-E/MF:
4.0A Dual Non-Inverting
MOSFET Driver,
8LD DFN package.
b)
MCP14E4-E/P:
4.0A Dual Non-Inverting
MOSFET Driver,
8LD PDIP package.
c)
MCP14E4T-E/SN: Tape and Reel,
4.0A Dual Non-Inverting
MOSFET Driver,
8LD SOIC package.
a)
MCP14E5T-E/MF: Tape and Reel,
4.0A Dual Complementary
MOSFET Driver,
8LD DFN package.
b)
MCP14E5-E/P:
4.0A Dual Complementary
MOSFET Driver,
8LD PDIP package.
c)
MCP14E5-E/SN:
4.0A Dual Complementary
MOSFET Driver,
8LD SOIC package.
* All package offerings are Pb Free (Lead Free)
© 2008 Microchip Technology Inc.
DS22062B-page 23
MCP14E3/MCP14E4/MCP14E5
NOTES:
DS22062B-page 24
© 2008 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, rfPIC and SmartShunt are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Linear Active Thermistor, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,
PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo,
PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2008, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2008 Microchip Technology Inc.
DS22062B-page 25
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
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Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
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Tel: 91-80-4182-8400
Fax: 91-80-4182-8422
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Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
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Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
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Tel: 45-4450-2828
Fax: 45-4485-2829
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Tel: 91-20-2566-1512
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China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
01/02/08
DS22062B-page 26
© 2008 Microchip Technology Inc.