SANYO ENA1266

EC4H08C
Ordering number : ENA1266
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
EC4H08C
UHF to X Band Low-Noise Amplifier
and OSC Applications
Features
•
•
•
•
High cut-off frequency : fT=24GHz typ (VCE=3V).
Low operating voltage.
High gain : ⏐S21e⏐2=17dB typ (f=2GHz).
Halogen free compliance (UL94 HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to- Base Voltage
VCBO
10
Collector-to-Emitter Voltage
VCEO
3.5
V
Emitter-to-Base Voltage
VEBO
2.5
V
15
mA
50
mW
Junction Temperature
IC
PC
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Collector Current
Collector Dissipation
V
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
Conditions
Gain-Bandwidth Product
VCE=1V, IC=5mA
VCE=3V, IC=10mA
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
VCE=3V, IC=10mA, f=2GHz
Noise Figure
2
⏐S21e⏐
NF
typ
VCE=1V, IC=2mA, f=2GHz
70
18
13
Unit
max
VCB=5V, IE=0A
VEB=1V, IC=0A
hFE
fT
Forward Transfer Gain
Ratings
min
1
μA
1
μA
150
24
GHz
0.06
pF
17
dB
1.5
2.0
dB
Marking : L
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
80608AB TI IM TC-00001511 No. A1266-1/3
EC4H08C
Package Dimensions
Electrical Connection (Top view)
unit : mm (typ)
7036-002
Polarity mark (Top)
Top View
0.8
Emitter
Base
3
1
2
Emitter
Collector
1.0
4
*Electrodes : Bottom
Polarity Discriminating Mark
Polarity mark (Top)
0.6
Emitter
Collector
Base
Emitter
0.5
0.3
0.2
2
4
3
1 : Base
2 : Emitter
3 : Collector
4 : Emitter
0.6
1
SANYO : ECSP1008-4
Bottom View
IC -- VCE
15
IC -- VBE
15
60μA
6
30μΑ
3
IB=0μA
0
0
1
2
Collector-to-Emitter Voltage, VCE -- V
6
3
0
3
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
IT13876
hFE -- IC
3
9
3V
90μΑ
9
12
VCE=1V
120μΑ
12
Collector Current, IC -- mA
Collector Current, IC -- mA
150μA
1.2
IT13877
Cre -- VCB
2
Reverse Transfer Capacitance, Cre -- pF
f=1MHz
DC Current Gain, hFE
2
VCE=3V
100
1V
7
5
3
1.0
2
3
5
7
10
Collector Current, IC -- mA
2
3
IT13878
0.1
7
5
3
2
0.1
2
3
5
7
1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
7 10
IT13897
No. A1266-2/3
EC4H08C
⏐S21e⏐2 -- IC
20
f T -- IC
7
f=2GHz
Gain-Bandwidth Product, f T -- GHz
18
V
=3
E
VC
16
14
1V
12
10
8
6
1.0
2
3
5
7
10
Collector Current, IC -- mA
3
=3V
VCE
2
1V
10
7
2
3
3.0
2.5
2.0
1.5
1.0
7
2
10
3
IT13886
PC -- Ta
60
3.5
5
Collector Current, IC -- mA
IT13885
VCE=1V
f=2GHz
ZS=Zsopt
0.5
1.0
5
5
1.0
3
NF -- IC
4.0
Noise Figure, NF -- dB
2
Collector Dissipation, PC -- mW
2
Forward Transfer Gain, ⏐S21e⏐ -- dB
f=2GHz
50
40
30
20
10
0
2
3
5
7
10
Collector Current, IC -- mA
2
3
IT13898
0
25
50
75
100
125
150
Ambient Temperature, Ta -- °C
175
IT13883
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of August, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1266-3/3