EC3H02BA Ordering number : ENA1064B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ (f=1GHz). High gain : ⏐S21e⏐2=12dB typ (f=1GHz). High cutoff frequency : fT=7GHz typ. Ultrasmall (1006size), slim (0.5mm) leadless package. Halogen free compliance (UL94 HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO 20 V 10 V VEBO IC 2 V 70 mA 100 mW 150 °C --55 to +150 °C Junction Temperature PC Tj Storage Temperature Tstg Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ Unit max ICBO IEBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current VEB=1V, IC=0A 10 μA DC Current Gain hFE VCE=5V, IC=20mA 120 Gain-Bandwidth Product VCE=5V, IC=20mA 5 Output Capacitance fT1 Cob VCB=10V, f=1MHz 0.7 Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.45 180 7 GHz 1.2 pF pF Continued on next page. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network 21209 MS IM TC-00001842 / 70908 TI IM TC-00001504 / 42308AB TI IM TC-00001344 No. A1064-1/5 EC3H02BA Continued from preceding page. Parameter Symbol Ratings Conditions Forward Transfer Gain ⏐S21e⏐21 ⏐S21e⏐22 VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz Noise Figure NF VCE=5V, IC=7mA, f=1GHz min typ 9 Unit max 12 dB 8.5 dB 1.0 1.8 dB Package Dimensions unit : mm (typ) 7039A-005 0.6 Polarity discriminating mark 3 1.0 2 0.025 0.5 1 0.5 0.25 0.65 1 2 3 0.15 0.35 1 : Collector 2 : Base 3 : Emitter SANYO : ECSP1006-3 Type No. Indication (Top view) Electrical Connection (Top view) Polarity mark (Top) B Base Collector Emitter *Electrodes : Bottom Polarity mark (Top) Collector Base Emitter No. A1064-2/5 EC3H02BA hFE -- IC 3 Gain-Bandwidth Product, f T -- GHz DC Current Gain, hFE 2 100 7 5 3 2 10 7 VCE=5V 10 7 5 3 2 1.0 7 5 5 3 5 7 1.0 2 3 5 7 2 10 3 5 Collector Current, IC -- mA 7 100 2 IT01363 7 1.0 2 3 5 7 2 10 3 5 7 100 2 IT01364 Collector Current, IC -- mA Cob -- VCB 3 Cre -- VCB 3 f=1MHz Reverse Transfer Capacitance, Cre -- pF f=1MHz 2 Output Capacitance, Cob -- pF f T -- IC 2 VCE=5V 1.0 7 5 3 2 0.1 7 5 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 Collector-to-Base Voltage, VCB -- V ⏐S21e⏐2 -- IC 14 2 10 3 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V IT01365 VCE=5V f=1GHz V Noise Figure, NF -- dB =5 2V 10 V CE 2 Forward Transfer Gain, ⏐S21e⏐ -- dB 10 8 6 4 8 6 4 2 2 0 0 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 2 IT01367 PC -- Ta 120 Collector Dissipation, PC -- mW 3 NF -- IC 12 f=1GHz 12 2 IT01366 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 IT01368 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01369 No. A1064-3/5 EC3H02BA S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.955 --22.6 3.418 163.3 0.056 76.0 0.975 --10.5 200 0.922 --43.0 3.109 148.7 0.104 63.2 0.921 --19.6 400 0.845 --77.2 2.617 124.8 0.165 44.2 0.794 --32.9 600 0.782 --101.8 2.156 107.7 0.189 31.3 0.694 --41.5 800 0.746 --119.1 1.788 94.2 0.200 23.5 0.630 --47.7 1000 0.734 --131.1 1.498 83.7 0.201 17.7 0.596 --52.2 1200 0.717 --141.2 1.326 74.6 0.198 14.7 0.573 --57.6 1400 0.707 --148.9 1.154 66.6 0.193 12.0 0.559 --61.9 1600 0.708 --155.5 1.029 60.2 0.182 10.7 0.561 --66.1 1800 0.711 --161.6 0.953 54.6 0.171 10.8 0.561 --71.6 2000 0.712 --166.5 0.880 49.3 0.160 13.0 0.569 --76.5 VCE=1V, IC=5mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.818 --47.9 13.330 150.0 0.049 64.3 0.869 --29.8 200 0.739 --83.2 10.545 129.6 0.076 49.6 0.681 --50.0 400 0.661 --122.9 6.688 107.4 0.098 37.8 0.445 --71.3 600 0.627 --142.2 4.726 95.9 0.106 35.4 0.334 --81.7 800 0.616 --153.8 3.653 87.5 0.114 36.3 0.279 --89.2 1000 0.614 --161.8 2.989 80.7 0.122 38.4 0.252 --94.7 1200 0.611 --167.3 2.534 75.1 0.130 40.8 0.238 --99.0 1400 0.607 --172.2 2.207 70.1 0.139 43.1 0.231 --102.8 1600 0.607 --176.6 1.965 65.5 0.149 45.1 0.227 --106.4 1800 0.610 179.8 1.776 61.1 0.159 47.1 0.230 --109.8 2000 0.609 176.9 1.627 57.0 0.171 48.6 0.237 --112.1 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.890 --32.1 9.129 158.3 0.042 72.1 0.938 --17.1 200 0.827 --59.6 7.989 141.0 0.073 57.6 0.824 --30.2 400 0.725 --98.7 5.823 117.5 0.104 41.8 0.618 --45.5 600 0.666 --121.9 4.355 103.4 0.115 34.5 0.496 --52.3 800 0.641 --136.9 3.448 93.1 0.121 32.2 0.429 --56.5 1000 0.631 --147.3 2.854 85.1 0.125 32.0 0.392 --59.9 1200 0.624 --154.9 2.436 78.5 0.128 33.1 0.372 --62.9 1400 0.618 --161.3 2.124 72.8 0.131 35.2 0.360 --66.0 1600 0.616 --166.7 1.894 67.5 0.134 37.6 0.352 --69.1 1800 0.618 --171.4 1.715 62.7 0.139 40.3 0.351 --72.9 2000 0.618 --175.1 1.571 58.1 0.144 43.2 0.357 --76.4 VCE=2V, IC=10mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.715 --60.8 21.486 143.7 0.035 62.1 0.806 --36.1 200 0.643 --98.6 15.499 122.8 0.051 49.2 0.580 --56.8 400 0.589 --135.1 9.112 103.3 0.065 44.8 0.355 --75.8 600 0.570 --151.5 6.296 93.9 0.075 47.3 0.261 --84.5 800 0.564 --161.1 4.816 86.9 0.087 50.9 0.215 --90.9 1000 0.563 --167.7 3.921 81.1 0.098 53.6 0.192 --95.4 1200 0.560 --172.3 3.308 76.3 0.112 56.0 0.181 --99.0 1400 0.558 --176.2 2.867 72.1 0.125 57.7 0.172 --102.6 1600 0.558 180.0 2.550 68.1 0.139 58.8 0.169 --105.3 1800 0.562 176.8 2.293 64.2 0.155 59.5 0.170 --107.8 2000 0.561 174.4 2.092 60.5 0.169 59.8 0.176 --109.2 No. A1064-4/5 EC3H02BA S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.797 --42.9 17.630 152.0 0.030 68.4 0.892 --22.3 200 0.708 --76.1 14.170 132.4 0.048 55.1 0.723 --36.7 400 0.608 --116.0 9.186 110.4 0.064 45.4 0.494 --48.9 600 0.565 --136.4 6.534 98.9 0.073 44.6 0.385 --52.5 800 0.550 --148.8 5.055 90.8 0.081 46.8 0.329 --54.0 1000 0.547 --157.0 4.134 84.3 0.089 49.9 0.299 --55.4 1200 0.541 --163.2 3.497 79.0 0.098 52.4 0.285 --56.7 1400 0.537 --168.1 3.025 74.4 0.109 55.0 0.277 --57.9 1600 0.539 --172.5 2.687 70.0 0.119 57.0 0.270 --60.1 1800 0.540 --176.5 2.425 65.8 0.130 58.6 0.271 --63.0 2000 0.540 --179.4 2.212 61.9 0.142 59.9 0.277 --65.8 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.618 --71.5 30.252 138.1 0.023 60.6 0.748 --37.0 200 0.554 --110.5 20.311 117.7 0.034 52.7 0.511 --52.9 400 0.519 --143.1 11.419 100.5 0.046 54.5 0.306 --62.6 600 0.507 --156.8 7.810 92.4 0.058 58.7 0.230 --64.0 800 0.504 --165.0 5.941 86.2 0.071 62.2 0.193 --64.9 1000 0.505 --170.5 4.816 81.1 0.084 64.7 0.175 --66.0 1200 0.504 --174.3 4.051 76.8 0.098 66.2 0.167 --67.0 1400 0.502 --177.8 3.502 73.0 0.112 67.2 0.162 --68.2 1600 0.504 178.9 3.107 69.3 0.127 67.4 0.159 --70.1 1800 0.508 176.0 2.788 65.7 0.142 67.4 0.161 --72.4 2000 0.507 173.9 2.539 62.3 0.155 67.1 0.169 --74.8 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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