EC3H03BA Ordering number : ENA1068 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Type Silicon Transistor EC3H03BA VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features • • • • • Low noise : NF=1.1dB typ (f=1GHz). High gain :⏐S21e⏐2=12dB typ (f=1GHz). High cutoff frequency : fT=7.5GHz typ. Ultraminiature (1006 size) and thin (0.5mm) leadless package . Halogen free compliance (UL94HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO 20 V 12 V VEBO IC 2 100 mA PC Tj 150 mW Junction Temperature 150 °C Storage Temperature Tstg --55 to +150 °C Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation V Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ Unit max ICBO IEBO VCB=10V, IE=0A 1.0 μA VEB=1V, IC=0A 10 μA VCE=5V, IC=30mA VCE=5V, IC=30mA Output Capacitance hFE fT Cob Reverse Transfer Capacitance Cre Forward Transfer Gain ⏐S21e⏐2 NF VCB=10V, f=1MHz VCE=5V, IC=30mA, f=1GHz Emitter Cutoff Current DC Current Gain Gain-Bandwitch Product Noise Figure 100 6 VCB=10V, f=1MHz VCE=5V, IC=7mA, f=1GHz 180 7.5 0.9 10 GHz 1.4 pF 0.65 pF 12 dB 1.1 2.0 dB Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 52009AB MS IM TC-00001966 No. A1068-1/5 EC3H03BA Package Dimensions unit : mm (typ) 7039A-005 Type No. Indication (Top view) Electrical Connection (Top view) Polarity mark (Top) C Base Collector Emitter *Electrodes : on the bottom Polarity mark (Top) Collector Base Emitter IC -- VCE 50 IC -- VBE 100 0.35mA 0.20mA 30 0.15mA 20 0.10mA 10 0.05mA IB=0mA 0 0 2 4 6 8 Collector-to-Emitter Voltage, VCE -- V 10 IT01418 80 2V 0.25mA VCE=5V Collector Current, IC -- mA Collector Current, IC -- mA 0.30mA 40 60 40 20 0 0 0.2 0.4 0.6 1.0 0.8 Base-to-Emitter Voltage, VBE -- V 1.2 IT01419 No. A1068-2/5 EC3H03BA hFE -- IC 7 f T -- IC 10 Gain-Bandwidth Product, f T -- GHz 5 DC Current Gain, hFE 3 2 VCE=5V 100 2V 7 5 3 2 V 2V 5 3 2 1.0 10 3 2 5 7 1.0 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 3 2 5 3 2 1.0 7 5 3 2 5 3 2 7 1.0 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 2 10 f=1MHz 5 3 2 1.0 7 5 3 2 2 5 3 7 1.0 2 5 3 7 2 Forward Transfer Gain, ⏐S21e⏐ -- dB Noise Figure, NF -- dB 6 4 2V 5V 0 7 3 2 1.0 5 7 2 10 3 Collector Current, IC -- mA 5 7 100 IT01424 PC -- Ta 160 3 IT01423 ⏐S21e⏐2 -- IC f=1GHz 8 = E 2 10 Collector-to-Base Voltage, VCB -- V IT01422 f=1GHz VC 7 100 IT01421 Cre -- VCB 16 2 5 3 7 0.1 0.1 3 NF -- IC 10 7 Collector Current, IC -- mA Reverse Transfer Capacitance, Cre -- pF 7 2 5 3 10 f=1MHz 0.1 0.1 2 1.0 IT01420 Cob -- VCB 10 Output Capacitance, Cob -- pF =5 V CE 7 14 12 =5V VCE 10 2V 8 6 4 2 0 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 IT01425 Collector Dissipation, PC -- mW 150 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR07925 No. A1068-3/5 EC3H03BA S Parameters (Common emitter) VCE=2V, IC=1mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.964 --19.7 3.124 165.8 0.045 78.6 0.978 --9.0 200 0.935 --39.7 2.708 153.5 0.082 65.9 0.939 --16.3 400 0.897 --67.9 2.474 129.9 0.138 49.5 0.836 --27.7 600 0.833 --93.6 2.245 113.2 0.163 36.1 0.744 --35.1 800 0.778 --114.5 1.987 99.4 0.177 27.8 0.689 --39.9 1000 0.759 --127.0 1.874 88.7 0.188 20.5 0.657 --44.0 1200 0.720 --140.2 1.499 80.2 0.179 17.2 0.622 --48.2 1400 0.731 --146.4 1.211 71.9 0.166 16.5 0.625 --52.1 1600 0.738 --151.5 1.105 65.2 0.157 15.4 0.657 --55.1 1800 0.741 --156.8 1.016 59.4 0.148 16.0 0.610 --60.5 2000 0.720 --164.1 1.014 54.3 0.140 15.6 0.599 --64.9 VCE=2V, IC=5mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.838 --40.4 13.956 153.7 0.038 70.0 0.905 --22.6 200 0.773 --70.4 11.300 134.6 0.063 55.1 0.747 --39.0 400 0.668 --112.8 7.451 111.9 0.087 41.8 0.521 --55.2 600 0.630 --133.8 5.422 99.0 0.094 39.5 0.406 --61.2 800 0.609 --147.0 4.241 89.9 0.103 40.2 0.334 --65.8 1000 0.600 --155.3 3.447 83.2 0.110 41.0 0.294 --69.9 1200 0.593 --162.1 2.923 77.3 0.119 42.9 0.268 --73.4 1400 0.590 --167.1 2.558 72.1 0.127 45.8 0.255 --76.1 1600 0.583 --172.2 2.297 67.5 0.135 47.9 0.253 --78.2 1800 0.578 --175.8 2.053 63.1 0.145 50.0 0.259 --79.7 2000 0.576 --179.7 1.861 58.7 0.155 52.6 0.254 --82.2 ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 --46.8 VCE=2V, IC=20mA, ZO=50Ω Freq(MHz) ⏐S11⏐ 100 0.618 --80.4 28.462 135.0 0.029 58.2 0.705 200 0.574 --119.9 18.357 114.6 0.039 48.7 0.461 --69.0 400 0.558 --149.5 10.129 98.0 0.053 52.8 0.273 --89.1 600 0.554 --161.5 6.930 89.8 0.066 57.1 0.203 --99.8 800 0.552 --168.7 5.257 83.8 0.081 60.9 0.170 --108.1 1000 0.549 --173.6 4.252 78.9 0.098 62.6 0.156 --113.9 1200 0.545 --177.4 3.595 74.5 0.115 63.7 0.148 --117.2 1400 0.546 179.4 3.104 70.6 0.129 64.5 0.142 --121.2 1600 0.544 176.5 2.742 66.8 0.147 64.0 0.140 --123.8 1800 0.541 173.9 2.470 63.4 0.162 63.8 0.140 --126.9 2000 0.541 171.5 2.241 59.6 0.178 63.8 0.133 --128.1 No. A1068-4/5 EC3H03BA S Parameters (Common emitter) VCE=5V, IC=3mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 100 0.907 --27.4 9.110 161.3 0.032 74.5 0.956 --12.6 200 0.857 --51.5 8.122 145.5 0.057 62.3 0.881 --21.8 400 0.737 --91.8 6.152 122.5 0.085 46.8 0.698 --34.9 600 0.682 --114.8 4.800 107.6 0.096 38.9 0.588 --39.9 --43.1 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ∠S22 ⏐S22⏐ 800 0.650 --130.1 3.718 97.3 0.100 37.7 0.516 1000 0.638 --140.2 3.112 89.3 0.104 35.8 0.458 --46.2 1200 0.628 --148.2 2.749 81.8 0.109 37.1 0.458 --47.0 1400 0.612 --156.0 2.487 75.8 0.112 36.7 0.453 --49.0 1600 0.597 --163.0 2.161 70.6 0.115 41.4 0.450 --51.6 1800 0.595 --167.0 1.930 65.7 0.118 44.5 0.437 --54.6 2000 0.599 --171.1 1.679 60.7 0.125 51.1 0.424 --57.2 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.751 --49.5 22.017 148.6 0.027 67.7 0.860 --25.8 200 0.660 --84.6 16.702 128.2 0.042 53.2 0.664 --40.9 400 0.572 --123.4 10.313 107.1 0.056 49.0 0.437 --52.3 600 0.543 --142.1 7.243 96.4 0.066 50.6 0.342 --54.4 800 0.530 --153.3 5.571 88.8 0.077 53.2 0.289 --55.6 1000 0.525 --160.2 4.531 83.1 0.088 55.2 0.259 --56.7 1200 0.518 --166.2 3.831 78.1 0.098 58.2 0.244 --57.7 1400 0.515 --170.5 3.312 73.6 0.110 60.6 0.235 --59.4 1600 0.514 --174.4 2.943 69.5 0.122 61.5 0.232 --60.3 1800 0.509 --177.2 2.636 65.7 0.135 62.4 0.234 --62.8 2000 0.511 179.6 2.387 61.7 0.148 63.4 0.230 --63.9 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2009. Specifications and information herein are subject to change without notice. PS No. A1068-5/5