SANYO EC3H03BA

EC3H03BA
Ordering number : ENA1068
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Type Silicon Transistor
EC3H03BA
VHF to UHF Wide-Band Low-Noise
Amplifier and OSC Applications
Features
•
•
•
•
•
Low noise : NF=1.1dB typ (f=1GHz).
High gain :⏐S21e⏐2=12dB typ (f=1GHz).
High cutoff frequency : fT=7.5GHz typ.
Ultraminiature (1006 size) and thin (0.5mm) leadless package .
Halogen free compliance (UL94HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
20
V
12
V
VEBO
IC
2
100
mA
PC
Tj
150
mW
Junction Temperature
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
V
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
Conditions
Ratings
min
typ
Unit
max
ICBO
IEBO
VCB=10V, IE=0A
1.0
μA
VEB=1V, IC=0A
10
μA
VCE=5V, IC=30mA
VCE=5V, IC=30mA
Output Capacitance
hFE
fT
Cob
Reverse Transfer Capacitance
Cre
Forward Transfer Gain
⏐S21e⏐2
NF
VCB=10V, f=1MHz
VCE=5V, IC=30mA, f=1GHz
Emitter Cutoff Current
DC Current Gain
Gain-Bandwitch Product
Noise Figure
100
6
VCB=10V, f=1MHz
VCE=5V, IC=7mA, f=1GHz
180
7.5
0.9
10
GHz
1.4
pF
0.65
pF
12
dB
1.1
2.0
dB
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
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52009AB MS IM TC-00001966 No. A1068-1/5
EC3H03BA
Package Dimensions
unit : mm (typ)
7039A-005
Type No. Indication (Top view)
Electrical Connection (Top view)
Polarity mark (Top)
C
Base
Collector
Emitter
*Electrodes : on the bottom
Polarity mark (Top)
Collector
Base
Emitter
IC -- VCE
50
IC -- VBE
100
0.35mA
0.20mA
30
0.15mA
20
0.10mA
10
0.05mA
IB=0mA
0
0
2
4
6
8
Collector-to-Emitter Voltage, VCE -- V
10
IT01418
80
2V
0.25mA
VCE=5V
Collector Current, IC -- mA
Collector Current, IC -- mA
0.30mA
40
60
40
20
0
0
0.2
0.4
0.6
1.0
0.8
Base-to-Emitter Voltage, VBE -- V
1.2
IT01419
No. A1068-2/5
EC3H03BA
hFE -- IC
7
f T -- IC
10
Gain-Bandwidth Product, f T -- GHz
5
DC Current Gain, hFE
3
2
VCE=5V
100
2V
7
5
3
2
V
2V
5
3
2
1.0
10
3
2
5 7 1.0
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
3
2
5
3
2
1.0
7
5
3
2
5
3
2
7 1.0
3
5
7
2
10
Collector-to-Base Voltage, VCB -- V
2
10
f=1MHz
5
3
2
1.0
7
5
3
2
2
5
3
7 1.0
2
5
3
7
2
Forward Transfer Gain, ⏐S21e⏐ -- dB
Noise Figure, NF -- dB
6
4
2V
5V
0
7
3
2
1.0
5
7
2
10
3
Collector Current, IC -- mA
5
7
100
IT01424
PC -- Ta
160
3
IT01423
⏐S21e⏐2 -- IC
f=1GHz
8
=
E
2
10
Collector-to-Base Voltage, VCB -- V
IT01422
f=1GHz
VC
7 100
IT01421
Cre -- VCB
16
2
5
3
7
0.1
0.1
3
NF -- IC
10
7
Collector Current, IC -- mA
Reverse Transfer Capacitance, Cre -- pF
7
2
5
3
10
f=1MHz
0.1
0.1
2
1.0
IT01420
Cob -- VCB
10
Output Capacitance, Cob -- pF
=5
V CE
7
14
12
=5V
VCE
10
2V
8
6
4
2
0
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT01425
Collector Dissipation, PC -- mW
150
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR07925
No. A1068-3/5
EC3H03BA
S Parameters (Common emitter)
VCE=2V, IC=1mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.964
--19.7
3.124
165.8
0.045
78.6
0.978
--9.0
200
0.935
--39.7
2.708
153.5
0.082
65.9
0.939
--16.3
400
0.897
--67.9
2.474
129.9
0.138
49.5
0.836
--27.7
600
0.833
--93.6
2.245
113.2
0.163
36.1
0.744
--35.1
800
0.778
--114.5
1.987
99.4
0.177
27.8
0.689
--39.9
1000
0.759
--127.0
1.874
88.7
0.188
20.5
0.657
--44.0
1200
0.720
--140.2
1.499
80.2
0.179
17.2
0.622
--48.2
1400
0.731
--146.4
1.211
71.9
0.166
16.5
0.625
--52.1
1600
0.738
--151.5
1.105
65.2
0.157
15.4
0.657
--55.1
1800
0.741
--156.8
1.016
59.4
0.148
16.0
0.610
--60.5
2000
0.720
--164.1
1.014
54.3
0.140
15.6
0.599
--64.9
VCE=2V, IC=5mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.838
--40.4
13.956
153.7
0.038
70.0
0.905
--22.6
200
0.773
--70.4
11.300
134.6
0.063
55.1
0.747
--39.0
400
0.668
--112.8
7.451
111.9
0.087
41.8
0.521
--55.2
600
0.630
--133.8
5.422
99.0
0.094
39.5
0.406
--61.2
800
0.609
--147.0
4.241
89.9
0.103
40.2
0.334
--65.8
1000
0.600
--155.3
3.447
83.2
0.110
41.0
0.294
--69.9
1200
0.593
--162.1
2.923
77.3
0.119
42.9
0.268
--73.4
1400
0.590
--167.1
2.558
72.1
0.127
45.8
0.255
--76.1
1600
0.583
--172.2
2.297
67.5
0.135
47.9
0.253
--78.2
1800
0.578
--175.8
2.053
63.1
0.145
50.0
0.259
--79.7
2000
0.576
--179.7
1.861
58.7
0.155
52.6
0.254
--82.2
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
--46.8
VCE=2V, IC=20mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
100
0.618
--80.4
28.462
135.0
0.029
58.2
0.705
200
0.574
--119.9
18.357
114.6
0.039
48.7
0.461
--69.0
400
0.558
--149.5
10.129
98.0
0.053
52.8
0.273
--89.1
600
0.554
--161.5
6.930
89.8
0.066
57.1
0.203
--99.8
800
0.552
--168.7
5.257
83.8
0.081
60.9
0.170
--108.1
1000
0.549
--173.6
4.252
78.9
0.098
62.6
0.156
--113.9
1200
0.545
--177.4
3.595
74.5
0.115
63.7
0.148
--117.2
1400
0.546
179.4
3.104
70.6
0.129
64.5
0.142
--121.2
1600
0.544
176.5
2.742
66.8
0.147
64.0
0.140
--123.8
1800
0.541
173.9
2.470
63.4
0.162
63.8
0.140
--126.9
2000
0.541
171.5
2.241
59.6
0.178
63.8
0.133
--128.1
No. A1068-4/5
EC3H03BA
S Parameters (Common emitter)
VCE=5V, IC=3mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
100
0.907
--27.4
9.110
161.3
0.032
74.5
0.956
--12.6
200
0.857
--51.5
8.122
145.5
0.057
62.3
0.881
--21.8
400
0.737
--91.8
6.152
122.5
0.085
46.8
0.698
--34.9
600
0.682
--114.8
4.800
107.6
0.096
38.9
0.588
--39.9
--43.1
⏐S21⏐
∠S21
⏐S12⏐
∠S12
∠S22
⏐S22⏐
800
0.650
--130.1
3.718
97.3
0.100
37.7
0.516
1000
0.638
--140.2
3.112
89.3
0.104
35.8
0.458
--46.2
1200
0.628
--148.2
2.749
81.8
0.109
37.1
0.458
--47.0
1400
0.612
--156.0
2.487
75.8
0.112
36.7
0.453
--49.0
1600
0.597
--163.0
2.161
70.6
0.115
41.4
0.450
--51.6
1800
0.595
--167.0
1.930
65.7
0.118
44.5
0.437
--54.6
2000
0.599
--171.1
1.679
60.7
0.125
51.1
0.424
--57.2
VCE=5V, IC=10mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.751
--49.5
22.017
148.6
0.027
67.7
0.860
--25.8
200
0.660
--84.6
16.702
128.2
0.042
53.2
0.664
--40.9
400
0.572
--123.4
10.313
107.1
0.056
49.0
0.437
--52.3
600
0.543
--142.1
7.243
96.4
0.066
50.6
0.342
--54.4
800
0.530
--153.3
5.571
88.8
0.077
53.2
0.289
--55.6
1000
0.525
--160.2
4.531
83.1
0.088
55.2
0.259
--56.7
1200
0.518
--166.2
3.831
78.1
0.098
58.2
0.244
--57.7
1400
0.515
--170.5
3.312
73.6
0.110
60.6
0.235
--59.4
1600
0.514
--174.4
2.943
69.5
0.122
61.5
0.232
--60.3
1800
0.509
--177.2
2.636
65.7
0.135
62.4
0.234
--62.8
2000
0.511
179.6
2.387
61.7
0.148
63.4
0.230
--63.9
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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This catalog provides information as of May, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1068-5/5