FH105A Ordering number : ENA1126 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH105A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package. Optimal for differential amplification due to excellent thermal equilibrium and pair capability. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current 30 mA Collector Dissipation IC PC When mounted on ceramic substrate (250mm2✕0.8mm) 1unit 150 mW Total Dissipation PT When mounted on ceramic substrate (250mm2✕0.8mm) 300 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Emitter Cutoff Current ICBO IEBO VCB=10V, IE=0A VEB=1V, IC=0A DC Current Gain hFE VCE=5V, IC=10mA Marking : 105 Ratings min typ 90 Unit max 1.0 μA 10 μA 200 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2908AB MS IM TC-00001689 No. A1126-1/6 FH105A Continued from preceding page. Parameter Symbol DC Current Gain Ratio Ratings Conditions min hFE(small/large) VCE=5V, IC=10mA VBE(large-small) VCE=5V, IC=10mA fT VCE=5V, IC=10mA Base-to-Emitter Voltage Diffrence Gain-Bandwidth Product 0.7 Cob VCB=10V, f=1MHz Forward Transfer Gain 2 ⏐S21e⏐ NF VCE=5V, IC=10mA, f=1.5GHz Unit max 0.95 1.0 mV 8 GHz 5 Output Capacitance Noise Figure typ 0.45 8 0.7 pF 10 VCE=5V, IC=5mA, f=1.5GHz dB 1.4 3.0 dB Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is also shown. Package Dimensions Electrical Connection unit : mm (typ) 7026-005 5 E1 0.2 0.25 0.15 6 4 2.1 1.25 0.425 B1 Tr1 Tr2 0.05 0.425 C1 1 2 3 0.65 E2 B2 C2 1 : Collector1 2 : Base2 3 : Collector2 4 : Emitter2 5 : Emitter1 6 : Base1 0.9 0.2 2.0 SANYO : MCP6 hFE -- IC 5 Gain-Bandwidth Product, f T -- GHz 3 DC Current Gain, hFE 2 100 7 5 3 2 10 f T -- IC 2 VCE=5V 10 =5V VCE =1V VCE 7 5 3 2 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 7 100 IT00322 1.0 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 IT14098 No. A1126-2/6 FH105A Cob -- VCB 5 Cre -- VCB 5 f=1MHz Reverse Transfer Capacitance, Cre -- pF f=1MHz Output Capacitance, Cob -- pF 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 5 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V IT00324 NF -- IC 12 3 VCE=2V f=1GHz 10 Noise Figure, NF -- dB 10 8 6 2 0 0.1 2 3 5 7 2 1.0 3 5 7 10 8 6 4 2 2 Collector Current, IC -- mA 3 0 0.1 5 2 3 2 5 7 1.0 2 3 5 7 10 2 2 f=1GHz 2 0 5V 4 10 V 6 5V 2V =1V V CE 8 12 2V 10 14 =1 V CE 2 Forward Transfer Gain, ⏐S21e⏐ -- dB f=1.5GHz 12 5 IT00327 ⏐S21e⏐ -- IC 16 14 3 Collector Current, IC -- mA IT00326 ⏐S21e⏐ -- IC 16 5V V 4 V CE=1 Noise Figure, NF -- dB 5 NF -- IC 12 f=1.5GHz 2 Forward Transfer Gain, ⏐S21e⏐ -- dB 3 IT00325 8 6 4 2 0 3 5 7 2 1.0 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 IT00328 PC -- Ta 350 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 IT00329 Collector Dissipation, PC -- mW When mounted on ceramic substrate (250mm2✕0.8mm) 300 250 To t al 200 di 150 ss ip ati on 1u nit 100 50 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00330 No. A1126-3/6 FH105A S Parameter S11e f=200MHz to 2000MHz(200MHz Step) S21e f=200MHz to 2000MHz(200MHz Step) 90° j50 j25 j100 j150 j200 j250 j10 0 --j10 60° 120° 25 2.0GHz 250 150 50 100 2.0GHz VCE=5V 2.0GHz IC=10mA VCE=5V IC=5mA 0.2GHz 0.2GHz 2.0GHz --j250 0.2GHz 0.2GHz --j200 --j150 VCE=1V V =2V CE IC=1mA --j100 --j25 IC=3mA 10 VCE=5V IC=10mA 150° 0.2GHz VCE=5V IC=5mA 2.0GHz 0.2GHz 2.0GHz VCE=2V 2.0GHz 0.2GHz I =3mA V =1V 4 8 CE ±180° C 2.0GHz IC=1mA 0.2GHz --90° j50 60° 2.0GHz 2.0GHz VCE=5V 2.0GHz IC=5mA VCE=5V 2.0GHz IC=10mA 30° VCE=2V VCE=1V 0.2GHz IC=3mA IC=1mA 0.2GHz 0.2GHz 0.2GHz 0.04 0.08 0.12 0.16 0.2 0 j25 j200 j250 j10 0 10 --30° --150° --j25 --60° IT00333 j100 j150 --j10 --90° IT00332 S22e f=200MHz to 2000MHz(200MHz Step) 90° --120° 0 --60° --120° S12e f=200MHz to 2000MHz(200MHz Step) ±180° 16 20 --30° IT00331 150° 12 --150° --j50 120° 30° 25 50 150 100 V =5V CE 250 IC=10mA 0.2GHz 0.2GHz 0.2GHz 2.0GHz 0.2GHz 2.0GHz 2.0GHz --j250 --j200 2.0GHz VCE=1V --j150 VCE=5V IC=1mA IC=5mA VCE=2V --j100 IC=3mA --j50 IT00334 No. A1126-4/6 FH105A S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 200 0.763 --37.5 11.926 146.9 0.036 70.7 0.892 --19.1 400 0.590 --65.4 9.202 124.3 0.058 60.9 0.740 --29.1 600 0.456 --85.5 7.173 109.4 0.073 57.4 0.631 --33.7 800 0.374 --102.0 5.743 98.7 0.086 56.7 0.566 --35.8 1000 0.323 --115.0 4.785 90.5 0.098 56.7 0.528 --37.2 1200 0.288 --127.5 4.105 83.6 0.110 57.2 0.505 --38.4 1400 0.264 --137.7 3.599 77.5 0.123 57.7 0.488 --39.6 1600 0.248 --147.4 3.213 71.3 0.136 57.6 0.476 --41.2 1800 0.239 --156.9 2.905 66.4 0.150 57.6 0.466 --43.3 2000 0.235 --165.7 2.651 61.3 0.165 57.2 0.462 --45.4 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 200 0.605 --52.6 16.354 136.2 0.031 67.5 0.804 --23.9 400 0.417 --84.6 11.011 113.3 0.048 62.4 0.622 --30.5 600 0.319 --106.3 8.026 100.5 0.062 62.2 0.533 --32.0 800 0.266 --124.6 6.250 91.3 0.076 63.4 0.491 --32.4 1000 0.238 --136.5 5.115 84.7 0.090 64.3 0.469 --33.2 1200 0.225 --148.9 4.336 78.8 0.104 64.4 0.458 --34.6 1400 0.215 --158.3 3.813 73.4 0.119 64.5 0.449 --35.8 1600 0.213 --167.3 3.365 68.1 0.135 63.8 0.443 --37.7 1800 0.212 --175.6 3.030 63.5 0.150 63.1 0.436 --39.6 2000 0.216 --177.5 2.754 58.9 0.166 62.5 0.438 --41.9 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 200 0.842 --30.7 8.491 153.0 0.044 72.5 0.931 --17.1 400 0.704 --56.3 7.161 131.9 0.075 60.9 0.808 --28.8 600 0.579 --76.1 5.879 116.3 0.095 54.1 0.696 --36.2 800 0.480 --93.1 4.882 104.2 0.109 51.0 0.615 --40.6 1000 0.417 --106.3 4.154 95.0 0.121 49.3 0.564 --43.5 1200 0.376 --119.6 3.597 87.1 0.132 48.7 0.526 --45.8 1400 0.343 --130.2 3.212 80.2 0.143 48.6 0.496 --47.5 1600 0.319 --140.5 2.875 73.4 0.154 48.7 0.475 --49.6 1800 0.303 --150.0 2.604 67.7 0.166 48.6 0.461 --51.6 2000 0.298 --160.0 2.383 62.1 0.179 48.9 0.451 --52.9 ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) ⏐S11⏐ 200 0.945 --18.9 3.296 162.5 0.054 77.2 0.980 --11.0 400 0.884 --37.3 3.206 145.9 0.102 65.9 0.934 --20.5 600 0.810 --53.6 2.942 131.2 0.139 56.3 0.870 --29.0 800 0.728 --69.4 2.711 117.8 0.166 48.6 0.811 --35.5 1000 0.667 --82.5 2.449 107.0 0.187 42.5 0.763 --40.9 1200 0.605 --95.8 2.252 96.9 0.199 37.3 0.715 --45.7 1400 0.561 --106.1 2.061 88.1 0.207 33.5 0.673 --49.4 1600 0.518 --117.2 1.909 79.5 0.212 30.6 0.638 --53.4 1800 0.492 --127.5 1.766 72.2 0.215 28.6 0.611 --56.5 2000 0.465 --137.9 1.658 65.2 0.217 27.6 0.592 --59.9 No. A1126-5/6 FH105A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A1126-6/6