SANYO VEC2904

VEC2904
Ordering number : ENA1158
SANYO Semiconductors
DATA SHEET
VEC2904
PNP Epitaxial Planar Silicon Transistor
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
Composite type, facilitating high-density mounting.
Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
VCEO
--30
V
--30
V
VECO
VEBO
--6.5
V
--5
V
IC
ICP
--3
A
--600
Collector Dissipation
IB
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Collector-to-Emitter Voltage
Emitter-to-Collector Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
--5
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
A
mA
1.1
W
150
°C
--55 to +150
°C
VDSS
VGSS
--12
V
±8
V
ID
--4
A
[FET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
--16
A
Allowable Power Dissipation
PD
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
1.1
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Marking : AH
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40908PE TI IM TC-00001144 No. A1158-1/6
VEC2904
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
max
Unit
[TR]
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
VCB=--30V, IE=0A
VEB=--4V, IC=0A
DC Current Gain
hFE
Gain-Bandwidth Product
fT
Cob
VCE=--2V, IC=--500mA
VCE=--10V, IC=--500mA
Output Capacitance
VCE(sat)1
Collector-to-Emitter Saturation Voltage
VCE(sat)2
Base-to-Emitter Saturation Voltage
VBE(sat)
200
--0.1
μA
--0.1
μA
560
380
VCB=--10V, f=1MHz
IC=--1.5A, IB=--30mA
MHz
25
IC=--1.5A, IB=--75mA
IC=--1.5A, IB=--30mA
IC=--10μA, IE=0A
pF
--160
--235
mV
--110
--160
mV
--0.83
--1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Collector Breakdown Voltage
V(BR)ECO
IC=--1mA, RBE=∞
IC=--10μA, RCB=∞
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V(BR)EBO
ton
IE=--10μA, IC=0A
See specified Test Circuit.
50
ns
Storage Time
tstg
See specified Test Circuit.
270
ns
tf
See specified Test Circuit.
25
ns
Fall Time
--30
V
--30
V
--6.5
V
--5
V
[FET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
--12
V
--10
μA
±10
μA
--1.0
V
Forward Transfer Admittance
VGS(off)
⏐yfs⏐
VGS=±6.4V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--2A
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
37
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
54
75
mΩ
ID=--0.3A, VGS=--1.8V
VDS=--6V, f=1MHz
76
107
mΩ
Input Capacitance
RDS(on)3
Ciss
Cutoff Voltage
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
--0.3
4.5
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
7.6
S
49
mΩ
940
pF
230
pF
180
pF
See specified Test Circuit.
14
ns
See specified Test Circuit.
120
ns
See specified Test Circuit.
97
ns
See specified Test Circuit.
110
ns
11
nC
1.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--6V, VGS=--4.5V, ID=--4A
VDS=--6V, VGS=--4.5V, ID=--4A
VDS=--6V, VGS=--4.5V, ID=--4A
Diode Forward Voltage
VSD
IS=--4A, VGS=0V
2.8
--0.85
nC
--1.2
V
Note : The specifications shown above are for each individual transistor.
Package Dimensions
Electrical Connection
0.3
8
7
8
7
6
5
1
2
3
4
0.15
6 5
2.3
2
3
4
1 : Emitter
2 : Base
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Collector
8 : Collector
Top view
0.65
2.9
0.75
1
0.07
0.25
2.8
0.25
unit : mm (typ)
7012-010
1 : Emitter
2 : Base
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Collector
8 : Collector
SANYO : VEC8
No. A1158-2/6
VEC2904
Switching Time Test Circuit
[TR]
[FET]
VDD= --6V
VIN
0V
--4.5V
IB1
PW=20μs
D.C.≤1%
IB2
ID= --2A
RL=3Ω
VIN
OUTPUT
INPUT
VOUT
D
RB
RL
VR
50Ω
PW=10μs
D.C.≤1%
G
+
+
100μF
470μF
VEC2904
VBE=5V
P.G
VCC= --12V
50Ω
S
IC=20IB1=--20IB2=500mA
IC -- VCE
--0.8
--2mA
--3.0
--2.5
--2.0
--1.5
°C
25°C
--25°C
A
--6mA
Ta=7
5
--3
0
--3.5
--4mA
--1.0
--0.4
--0.5
IB=0mA
0
0
--200
--400
--600
--800
Collector-to-Emitter Voltage, VCE -- V
hFE -- IC
1000
Ta=75°C
3
25°C
--25°C
2
--0.2
100
7
5
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
IT01744
VCE(sat) -- IC
--1.0
7
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
DC Current Gain, hFE
0
IT01743
[TR]
7
[TR]
IC / IB=20
3
2
--0.1
7
5
5°C
7
Ta=
3
2
°C
--25
°C
25
--0.01
7
5
3
2
10
--0.01
0
--1000
VCE= --2V
5
[TR]
VCE= --2V
--8mA
--1.6
--1.2
IC -- VBE
--4.0
--10mA
0
--2
--50m
Collector Current, IC -- A
[TR]
mA
mA
--40mA
Collector Current, IC -- A
--2.0
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT01745
3
2
--0.001
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT01746
No. A1158-3/6
VEC2904
VCE(sat) -- IC
[TR]
--1.0
7
5
3
2
C
=75°
2
--0.01
--0.01
2
3
C
25°
°C
--25
5 7 --0.1
2
3
5 7 --1.0
2
3
Cob -- VCB
[TR]
7
5
3
2
3
5
7
2
--10
3
Collector-to-Base Voltage, VCB -- V
2
3
5 7 --0.1
2
--0.1
7
5
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
2
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
100
7
5
3
2
2
3
5
7 --100
2
3
0.8
0.6
0.4
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13482
ID -- VGS
[FET]
--4.0
VDS= --6V
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
Ta=
7
0
0
--0.4
3
1.0
--0.5
--0.3
2
IT01750
1.1
VGS= --1.0V
--0.2
7 --1000
PC -- Ta
[TR]
When mounted on ceramic substrate
(900mm2✕0.8mm) 1unit
--1.5V
--1
--0.1
5
0
--2
0
[TR]
VCE= --10V
2
5
[FET]
--4.0V
--2.5
V
--2.0
V
--1.
8V
--6.0V --4.5V
--3
5 7 --10
IT01748
3
IT13481
ID -- VDS
--4
3
0.2
3
Collector-to-Emitter Voltage, VCE -- V
2
5
5°C
3
5 7 --1.0
f T -- IC
1.4
Collector Dissipation, PC -- W
s
s
0μ
3
3
1.2
0μ
--1.0
7
5
50
10 10m
0m s
DC
s
op
era
tio
n
s
2
Collector Current, IC -- mA
10
Collector Current, IC -- A
2
IT01749
[TR]
1m
IC= --3A
2
25°C
3
ICP= --5A
3
Drain Current, ID -- A
75°C
5
10
--10
5
ASO
--10
7
5
Ta= --25°C
7
7
100
2
--1.0
1000
f=1MHz
10
--1.0
2
Collector Current, IC -- A
Gain-Bandwidth Product, f T -- MHz
Output Capacitance, Cob -- pF
2
3
--0.1
--0.01
5 7 --10
IT01747
Collector Current, IC -- A
5
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT09403
0
--0.2
--0.4
--0.6
--0.8
--1.0
25
°C --25°C
Ta
3
[TR]
IC / IB=50
7
3
2
--0.1
7
5
VBE(sat) -- IC
--10
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
--10
7
5
--1.2
--1.4
Gate-to-Source Voltage, VGS -- V
--1.6
--1.8
IT09404
No. A1158-4/6
VEC2904
RDS(on) -- VGS
150
[FET]
RDS(on) -- Ta
150
[FET]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
75
50
25
--1
--2
--3
--4
--5
Gate-to-Source Voltage, VGS -- V
[FET]
5
3
2
=
Ta
1.0
C
5°
--2
°C
75
°C
25
7
50
25
--40
--20
5
3
0
20
40
60
80
100
120
140
160
IT09406
IS -- VSD
--10
7
5
Source Current, IS -- A
Forward Transfer Admittance, ⏐yfs⏐ -- S
7
A
Ambient Temperature, Ta -- °C
VDS= --6V
[FET]
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
2
0.1
--0.01
2
5 7 --0.1
3
2
5 7 --1.0
3
2
3
Drain Current, ID -- A
SW Time -- ID
5
--0.01
--0.3
5 7 --10
IT09407
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
Diode Forward Voltage, VSD -- V
3
--1.1
IT09408
Ciss, Coss, Crss -- VDS
[FET]
VDD= --6V
VGS= --4.5V
3
[FET]
f=1MHz
2
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
--6
.3
= --0
, ID
1.8V
--1.0A
, I D=
V
5
.
2
= -VGS
= --2.0A
4.5V, I D
V GS= --
IT09405
⏐yfs⏐ -- ID
10
= -VGS
75
0
--60
0
0
100
--25°
C
--2.0A
5°C
ID= --0.3A
100
125
25°
C
--1.0A
125
Ta=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
td (off)
100
tf
7
tr
5
3
2
Ciss
1000
7
5
3
td(on)
Coss
Crss
2
10
100
7
--0.1
2
3
5
7
2
--1.0
3
Drain Current, ID -- A
0
[FET]
3
2
VDS= --6V
ID= --4A
--4.0
--10
7
5
--3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
7
--3.0
--2.5
--2.0
--1.5
--1.0
0
1
2
3
4
5
6
7
8
Total Gate Charge, Qg -- nC
9
10
11
IT09411
--4
--6
--10
ASO
[FET]
IDP= --16A
ID= --4A
DC
3
2
--12
IT09410
--1.0
7
5
--0.1
7
5
--8
Drain-to-Source Voltage, VDS -- V
3
2
3
2
--0.5
0
--2
IT09409
VGS -- Qg
--4.5
5
PW≤10μs
1m
s
10
10
0m
ms
s
op
era
tio
n
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
--0.01
--0.01
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
IT13483
No. A1158-5/6
VEC2904
PD -- Ta
1.2
1.1
Collector Dissipation, PD -- W
[FET]
When mounted on ceramic substrate
(900mm2✕0.8mm) 1unit
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13484
Note on usage : Since the VEC2904 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
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mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of April, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1158-6/6