ECH8662 Ordering number : ENA1259 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8662 General-Purpose Switching Device Applications Features • • • Low ON-resistance. 2.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 40 V ±10 V ID 6.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 40 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 1.3 W Total Dissipation PT Tch When mounted on ceramic substrate (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : TH Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0V Ratings min typ Unit max 40 V VDS=40V, VGS=0V IGSS VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 ⏐yfs⏐ VDS=10V, ID=3.5A 3.9 1 μA ±10 μA 1.3 V 6.5 S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70908PE TI IM TC-00001419 No. A1259-1/4 ECH8662 Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=3.5A, VGS=4.5V ID=3.5A, VGS=4V Input Capacitance RDS(on)3 Ciss ID=1.5A, VGS=2.5V VDS=20V, f=1MHz VDS=20V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Package Dimensions Ratings Conditions min 30 mΩ 33 mΩ 30 42 mΩ pF 77 pF VDS=20V, f=1MHz See specified Test Circuit. 60 pF 14 ns See specified Test Circuit. 34 ns See specified Test Circuit. 93 ns See specified Test Circuit. 55 ns VDS=20V, VGS=4.5V, ID=6.5A VDS=20V, VGS=4.5V, ID=6.5A 12 nC 2.2 nC VDS=20V, VGS=4.5V, ID=6.5A IS=6.5A, VGS=0V 3.4 0.85 8 7 6 5 1 2 3 4 2.9 0.25 23 25 1130 Top View 0.15 5 2.3 0 to 0.02 2.8 Unit max nC 1.2 V Electrical Connection unit : mm (typ) 7011A-001 8 typ 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.65 0.3 0.9 0.25 Top view 4 1 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=20V VIN 4.5V 0V ID=3.5A RL=5.7Ω VIN D VOUT PW=10μs D.C.≤1% G ECH8662 P.G 50Ω S No. A1259-2/4 ECH8662 ID -- VDS 1.5V 3.0 2.5 2.0 1.5 5 4 3 2 1.0 1 VGS=1.2V 0.5 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1.5A 3.5A 36 27 18 9 0 1 2 3 4 5 6 7 .5A =1 5A I . D V, =3 ID 2.5 , = V .5A =3 V GS =4.0 I D , S VG .5V =4 S VG 36 27 18 9 --40 --20 0 20 40 60 80 100 120 = Ta C 5° --2 °C 75 °C 25 3 2 0.1 7 5 3 2 160 IT13828 VGS=0V 10 7 5 1.0 7 5 140 IS -- VSD 2 3 2 2.5 IT13826 Ambient Temperature, Ta -- °C ⏐yfs⏐ -- ID 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0 5 7 10 IT13829 0.4 0.6 0.8 1.0 1.2 IT13830 Ciss, Coss, Crss -- VDS 3 VDD=20V VGS=4.5V 2 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 3 f=1MHz 2 Ciss 1000 td(off) 100 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 45 IT13827 VDS=10V 0.01 0.001 2 3 2.0 54 0 --60 8 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S Gate-to-Source Voltage, VGS -- V 1.5 RDS(on) -- Ta 63 54 0 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 45 0.5 IT13825 RDS(on) -- VGS 63 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 °C 25°C 0.1 Ta=7 5 0 10 7 5 25°C -25°C 3.5 6 °C 4.0 7 Ta=7 5 4.5 --25° C Drain Current, ID -- A 5.0 VDS=10V 8 Drain Current, ID -- A 5.5 ID -- VGS 9 1.8 V 6.0 2.5V 2 .0 V 8.0V 4.5V 4.0V 6.5 7 tf 5 3 tr 2 td(on) 5 3 2 100 Coss 7 Crss 5 10 7 0.1 7 3 2 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT13831 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 35 40 IT13832 No. A1259-3/4 ECH8662 VGS -- Qg 5.0 4.5 4.0 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 VDS=20V ID=6.5A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 11 12 IT13833 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 10 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO PW≤10μs IDP=40A 10 1m ID=6.5A 0μ s s 10m s DC 10 op 0m s n( Operation in this Ta= area is limited by RDS(on). 25 °C ) era tio Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 IT13834 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.3 1.2 To t al 1.0 Di ss 1u 0.8 nit ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13835 Note on usage : Since the ECH8662 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1259-4/4