MCH6937 Ordering number : EN8040A SANYO Semiconductors DATA SHEET MCH6937 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO --30 V Collector-to-Emitter Voltage VCEO --30 V Emitter-to-Base Voltage VEBO --5 Collector Current IC Collector Current (Pulse) Collector Dissipation ICP PC Junction Temperature Mounted on a ceramic board (600mm2✕0.8mm) V --300 mA --600 mA 0.5 W Tj 150 °C VDSS VGSS 30 V ±10 V ID 150 mA 600 mA [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation IDP PD Channel Temperature Tch Mounted on a ceramic board (600mm2✕0.8mm) 0.5 W 150 °C [Common Rating] Total Dissipation Storage Temperature PT Tstg Mounted on a ceramic board (600mm2✕0.8mm) 0.55 W --55 to +150 °C Marking : EY Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30707 TI IM TC-00000563 / 12805EA TS IM TB-00001159 No.8040-1/6 MCH6937 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [TR] Collector Cutoff Current ICBO VCB=--30V, IE=0A --100 nA Emitter Cutoff Current IEBO hFE VEB=--4V, IC=0A --100 nA DC Current Gain Gain-Bandwidth Product fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton tstg Storage Time Fall Time tf VCE=--2V, IC=--10mA VCE=--10V, IC=--50mA 200 500 520 VCB=--10V, f=1MHz MHz 3 IC=--100mA, IB=--5mA IC=--100mA, IB=--5mA IC=--10µA, IE=0A IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. pF --110 --220 mV --0.9 --1.2 V --30 V --30 V --5 V 39 ns See specified Test Circuit. 200 ns See specified Test Circuit. 48 ns [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=100µA 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID=80mA 0.15 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage 30 V 10 µA ±10 µA 1.3 0.22 V S ID=80mA, VGS=4V ID=40mA, VGS=2.5V 2.9 3.7 Ω 3.7 5.2 Ω 6.4 12.8 7.0 pF Input Capacitance Ciss ID=10mA, VGS=1.5V VDS=10V, f=1MHz Output Capacitance Coss VDS=10V, f=1MHz 5.9 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 2.3 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 155 ns tf See specified Test Circuit. 120 ns Turn-OFF Delay Time Fall Time Ω Total Gate Charge Qg nC Qgs VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA 1.58 Gate-to-Source Charge 0.26 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 2.0 6 5 0.25 5 4 1 2 3 4 2 3 0.65 1 : Source 2 : Gate 3 : Collector 4 : Emitter 5 : Base 6 : Drain Top view 0.3 0.85 0.07 6 0 to 0.02 1 V Electrical Connection 0.15 2.1 1.6 0.25 Package Dimensions unit : mm (typ) 7022A-017 nC 1.2 1 2 3 1 : Source 2 : Gate 3 : Collector 4 : Emitter 5 : Base 6 : Drain 6 5 4 SANYO : MCPH6 No.8040-2/6 MCH6937 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% VDD=15V VIN 4V 0V OUTPUT IB2 INPUT D RB VR 50Ω ID=80mA RL=187.5Ω VIN VOUT PW=10µs D.C.≤1% RL G + + 220µF 470µF MCH6937 VBE=5V P.G VCC= --12V 50Ω S IC=20IB1= --20IB2= --100mA --100 --0.4mA --80 --0.2mA --60 --40 --300 --200 5°C 25°C --0.6mA A --120 Collector Current, IC -- mA --0.8mA Ta= 7 m --1.4 .8 --1 --140 [TR] VCE= --2V 1.2m A -- --1 --2.0 m Collector Current, IC -- mA mA --160 IC -- VBE --400 A --1.0mA A .6m --180 [TR] --25° C IC -- VCE --200 --100 --20 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Collector-to-Emitter Voltage, VCE -- V hFE -- IC Ta=75°C DC Current Gain, hFE 25°C --25°C 3 --0.2 2 100 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V [TR] VCE= --2V 7 5 0 IT04096 VCE(sat) -- IC 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 1000 0 --2.0 IT04097 [TR] IC / IB=20 5 3 2 --100 7 5 5 Ta=7 3 °C --25°C 2 C 25° 7 5 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC -- mA Ta= --25°C 7 25°C 5 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 3 2 3 5 IT04100 5 7 --10 2 3 5 7 --100 fT -- IC 1000 Gain-Bandwidth Product, f T -- MHz Base-to-Emitter Saturation Voltage, VBE(sat) -- mV [TR] --1000 75°C 2 2 Collector Current, IC -- mA IC / IB=20 2 3 --1.0 --10 --1.0 5 IT04098 VBE(sat) -- IC 3 3 3 5 IT04099 [TR] VCE= --10V 7 5 3 2 100 7 5 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 IT04101 No.8040-3/6 MCH6937 Cob -- VCB 10 [TR] Ron -- IB 5 f=1MHz OUT IN 3 1kΩ 7 2 ON-Resistance, Ron -- Ω Output Capacitance, Cob -- pF [TR] 1kΩ f=1MHz 5 3 2 IB 10 7 5 3 2 1.0 7 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V Collector Dissipation, PC -- W 0.5 5 2 3 5 7 2 --1.0 3 5 7 --10 IT06066 Base Current, IB -- mA IT04102 PC -- Ta 0.6 5 --0.1 [TR] M ou nt ed 0.4 on ac er am ic 0.3 bo ar d( 60 0.2 0m m2 ✕ 0.8 m 0.1 m )1 un it 0 100 120 140 160 IT06744 ID -- VDS [FET] 2. V 0.25 0.10 0.08 VGS=1.5V 0.06 0.04 0.20 75 V Drain Current, ID -- A 3.0 4.0V 0.12 2.0 V 3.5V [FET] VDS=10V 6.0 Drain Current, ID -- A 0.14 ID -- VGS 0.30 5V 0.16 °C 80 25 60 °C 40 Ambient Temperature, Ta -- °C °C 20 Ta= --25 0 0.15 0.10 0.05 0.02 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 10 0.9 0 1.0 0.5 1.0 1.5 2.5 2.0 [FET] [FET] VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 6 80mA 5 ID=40mA 4 3 2 1 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 IT00030 RDS(on) -- ID 7 Ta=25°C 0 3.0 Gate-to-Source Voltage, VGS -- V IT00029 10 IT00031 5 Ta=75°C 25°C 3 --25°C 2 1.0 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 5 IT00032 No.8040-4/6 MCH6937 RDS(on) -- ID 10 [FET] RDS(on) -- ID 3 [FET] VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VGS=2.5V 7 Ta=75°C 5 25°C --25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 3 , mA 40 I D= 4 m 80 I D= 3 0V =4. V GS A, 2 1 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- ¡C 25°C 3 2 3 5 7 2 0.01 3 [FET] VDS=10V 5 3 25°C °C --25 Ta= 2 75°C 0.1 7 5 0.01 160 2 3 5 7 2 0.1 3 Drain Current, ID -- A [FET] SW Time -- ID 5 [FET] VDD=15V VGS=4V Switching Time, SW Time -- ns °C 25° C 7 5 --25 °C 75 0.1 Ta = Source Current, IS -- A 3 2 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 5 td (off) 2 tf 100 7 tr 5 3 td(on) 2 10 0.01 1.2 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 2 10 Ciss Coss 5 3 Crss 2 5 7 2 0.1 IT00038 VGS -- Qg 10 [FET] VDS=10V ID=150mA 9 3 3 Drain Current, ID -- A f=1MHz 7 2 IT00037 [FET] 5 IT00036 VGS=0V 3 5 IT00034 yfs -- ID IT00035 IS -- VSD 5 --25°C 7 Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5V =2. V GS 5 Drain Current, ID -- A [FET] 6 5 Ta=75°C 7 IT00033 RDS(on) -- Ta 7 10 2 0.001 5 Drain Current, ID -- A 2 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 No.8040-5/6 MCH6937 PD -- Ta [FET] PT -- Ta 0.6 [Common] 0.55 0.5 M 0.5 M ou Total Dissipation, PT -- W Allowable Power Dissipation, PD -- W 0.6 nt 0.4 ed on ac er am ic 0.3 bo ar d( 60 0.2 0m m2 ✕ 0.8 m 0.1 m ou nt 0.4 ed on ac er am ic 0.3 bo ar d (6 00 m 0.2 m2 ✕ 0. 0.1 )1 un 8m m ) it 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01118 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT07146 Note on usage : Since the MCH6937 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2007. Specifications and information herein are subject to change without notice. PS No.8040-6/6