SANYO MCH3478

MCH3478
Ordering number : ENA1353
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
MCH3478
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance.
Ultrahigh speed switching.
1.8V drive.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
VDSS
VGSS
Unit
30
Drain Current (PW≤10s)
ID
ID
Duty cycle≤1%
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
V
±12
V
2
A
2.5
A
8
A
0.8
W
Allowable Power Dissipation
PD
1.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm), PW=10s
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID=1A
Marking : FK
Ratings
min
typ
Unit
max
30
V
0.4
1.2
1
μA
±10
μA
1.3
2.0
V
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
21809PE MS IM TC-00001860 No. A1353-1/4
MCH3478
Continued from preceding page.
Parameter
Symbol
RDS(on)1
RDS(on)2
Ratings
Conditions
min
typ
Unit
max
RDS(on)3
ID=1A, VGS=4.5V
ID=0.5A, VGS=2.5V
ID=0.3A, VGS=1.8V
Input Capacitance
Ciss
VDS=10V, f=1MHz
130
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
21
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
14
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
4.4
ns
See specified Test Circuit.
8.7
ns
See specified Test Circuit.
16
ns
Fall Time
td(off)
tf
See specified Test Circuit.
12
ns
Total Gate Charge
Qg
VDS=10V, VGS=4.5V, ID=2A
1.7
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=4.5V, ID=2A
VDS=10V, VGS=4.5V, ID=2A
0.25
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.85
Static Drain-to-Source On-State Resistance
Rise Time
Turn-OFF Delay Time
Package Dimensions
mΩ
mΩ
250
375
mΩ
nC
1.2
V
Switching Time Test Circuit
VDD=15V
0.25
4.5V
0V
0.15
2.0
3
1.6
1
ID=1A
RL=15Ω
VIN
VOUT
D
G
2
0.65
VIN
PW=10μs
D.C.≤1%
0 t o 0.02
0.25
165
235
0.38
unit : mm (typ)
7019A-003
2.1
125
165
P.G
50Ω
0.3
MCH3478
0.85
S
0.07
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
V
1.6
1.5V
0.8
0.6
0.4
0.8
0.6
0.4
VGS=1.2V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
0.2
1.0
IT14137
0
25°C
0.2
0
1.0
--25°
C
1.0
1.2
5°C
1.2
1.4
Ta=
7
1.4
VDS=10V
1.8
Drain Current, ID -- A
Drain Current, ID -- A
1.6
ID -- VGS
2.0
1.8
7.0V 4.
5V
1.8
3.5V
2.5V
ID -- VDS
2.0
0
0.5
1.0
1.5
2.0
Gate-to-Source Voltage, VGS -- V
2.5
IT14138
No. A1353-2/4
MCH3478
RDS(on) -- VGS
450
350
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
1A
300
250
200
150
100
50
0
0
1
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
250
0.5A
, I D=
2.5V
=
.0A
VGS
I =1
4.5V, D
=
V GS
200
150
100
50
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14140
IS -- VSD
VGS=0V
3
3
2
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
=
V, I D
=1.8
VGS
5
°C
-25
=C
a
T
75°
1.0
7
°C
25
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.1
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain Current, ID -- A
0.01
3
0.2
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
1.2
IT14142
Ciss, Coss, Crss -- VDS
7
VDD=15V
VGS=4.5V
5
0
IT14141
SW Time -- ID
7
f=1MHz
5
3
3
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
0.3A
300
0
--60
10
VDS=10V
7
0.01
td(off)
tf
10
tr
7
td(on)
5
Ciss
100
7
5
3
Coss
2
10
2
0.1
2
3
5
7
2
1.0
3
5
Drain Current, ID -- A
7
7
5
10
10
7
5
Drain Current, ID -- A
3.0
2.5
2.0
1.5
1.0
3
2
1.0
7
5
0.4
0.6
0.8
1.0
1.2
1.4
Total Gate Charge, Qg -- nC
1.6
1.8
2.0
IT14145
15
20
25
ASO
IDP=8A
ID=2A(DC)
0.1
7
5
DC
30
IT14144
PW≤10μs
10
0μ
s
1m
10 s
m
s
ID=2.5A(PW=10s)
op
er
ati
on
3
2
3
2
0.5
0.2
10
2
3.5
0
5
Drain-to-Source Voltage, VDS -- V
VDS=10V
ID=2A
4.0
0
IT14143
VGS -- Qg
4.5
0
2
Crss
3
Gate-to-Source Voltage, VGS -- V
350
IT14139
| yfs | -- ID
5
400
Ta=7
5°C
25°C
--25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=0.3A
0.5A
400
RDS(on) -- Ta
450
Ta=25°C
Operation in this area
is limited by RDS(on).
10
0
10 ms
s
(T
a=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT14146
No. A1353-3/4
MCH3478
PD -- Ta
Allowable Power Dissipation, PD -- W
1.4
When mounted on ceramic substrate
(900mm2×0.8mm)
1.2
1.0
0.8
PW
DC
0.6
=1
0s
op
era
tio
0.4
n
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14147
Note on usage : Since the MCH3478 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of February, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1353-4/4