SANYO FW812

FW812
Ordering number : ENA1806
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
FW812
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance
4V drive
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
35
V
±20
V
10
A
A
Drain Current (PW=10s)
ID
ID
Duty cycle≤1%
11.5
Drain Current (PW≤10μs)
IDP
Duty cycle≤1%
52
A
Allowable Power Dissipation
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
2.3
W
Total Dissipation
PD
PT
2.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
Package Dimensions
Product & Package Information
unit : mm (typ)
7005A-003
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
8
0.2
0.3
0.8
5.0
5
Packing Type : TL
Marking
1.5
1.8 MAX
W812
4.4
0.7
0.8
6.0
0.1
1
4
1.27
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
LOT No.
TL
Electrical Connection
8
7
6
5
1
2
3
4
SANYO : SOP8
http://semicon.sanyo.com/en/network
81110PA TK IM TC-00002270 No. A1806-1/4
FW812
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
Conditions
min
typ
Unit
max
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=35V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=10A
5.2
RDS(on)1
ID=10A, VGS=10V
13
17
mΩ
RDS(on)2
ID=5A, VGS=4.5V
21
30
mΩ
RDS(on)3
ID=5A, VGS=4V
27
38
mΩ
Input Capacitance
Ciss
960
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
130
pF
VDS=20V, f=1MHz
See specified Test Circuit.
80
pF
13.5
ns
See specified Test Circuit.
46.6
ns
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
35
V
1.2
1
μA
±10
μA
2.6
V
S
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Rise Time
td(on)
tr
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
57.0
ns
Fall Time
tf
See specified Test Circuit.
38.9
ns
Total Gate Charge
Qg
VDS=20V, VGS=10V, ID=10A
19
nC
Gate-to-Source Charge
Qgs
3.9
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=20V, VGS=10V, ID=10A
VDS=20V, VGS=10V, ID=10A
Diode Forward Voltage
VSD
IS=10A, VGS=0V
3.8
nC
0.85
1.2
V
Switching Time Test Circuit
10V
0V
VDD=20V
VIN
ID=10A
RL=2.0Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
FW812
50Ω
V
3.5V
5
4
3
10
8
6
C
6
12
4
VGS=3.0V
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
25
°C
2
2
1.0
IT15793
0
0
1
2
--25°
C
7
VDS=10V
14
Drain Current, ID -- A
8
ID -- VGS
16
4.0
14.0V 10.0V
9
6.0V
4.5V
ID -- VDS
10
Drain Current, ID -- A
S
Ta=7
5°
P.G
3
4
Gate-to-Source Voltage, VGS -- V
IT15794
No. A1806-2/4
FW812
RDS(on) -- VGS
70
10A
50
40
30
20
10
0
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
2
C
5°
°C
75
-2
=-
Ta
1.0
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
SW Time -- ID
2
40
60
80
100
120
140
160
IT15796
IS -- VSD
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
0.01
0.2
5 7 10
2
IT15797
100
1.0
1.2
IT15798
f=1MHz
Ciss, Coss, Crss -- pF
5
tf
2
td(on)
10
0.8
2
td(off)
3
0.6
Ciss, Coss, Crss -- VDS
3
VDD=20V
VGS=10V
7
0.4
Diode Forward Voltage, VSD -- V
tr
7
Ciss
1000
7
5
3
2
Coss
100
5
Crss
7
3
0.1
2
3
5
7
2
1.0
3
5
7
Drain Current, ID -- A
5
2
10
100
7
5
3
2
Drain Current, ID -- A
8
7
6
5
4
3
2
1
0
2
4
6
8
10
12
14
Total Gate Charge, Qg -- nC
5
16
18
20
IT15801
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V
VDS=20V
ID=10A
9
0
IT15892
VGS -- Qg
10
Gate-to-Source Voltage, VGS -- V
20
3
2
Drain Current, ID -- A
0
0
10
7
5
C
25°
3
--20
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
7
5
--40
Ambient Temperature, Ta -- °C
VDS=10V
0.1
0.01
Switching Time, SW Time -- ns
0
--60
16
IT15891
| yfs | -- ID
10
10
--25°
C
4
20
°C
2
I =5A
4.0V, D
V GS=
5A
, I D=
4.5V
=
VGS
10A
, I D=
10.0V
=
VGS
30
25°
C
0
40
Ta=
75
ID=5A
60
RDS(on) -- Ta
50
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
10
7
5
3
2
ASO
IDP=52A (PW≤10μs)
10
ID=10A
0.1
7
5
3
2
ms
0m
1.0
7
5
3
2
0μ
s
10
μs
s
10
10
DC
1m
35
IT15800
s
10
s
op
era
tio
n
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5 7
IT15802
No. A1806-3/4
FW812
Allowable Power Dissipation, PD -- W
When mounted on ceramic substrate
(2000mm2×0.8mm), PW≤10s
2.5
2.3
2.0
To
t
al
1.5
1u
di
ss
nit
ip
ati
on
1.0
0.5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15803
Allowable Power Dissipation(FET1), PD -- W
PD -- Ta
3.0
PD (FET1) -- PD (FET2)
2.4
2.3
2.2
When mounted on ceramic substrate
(2000mm2×0.8mm), PW≤10s
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Allowable Power Dissipation(FET2), PD -- W IT15804
Note on usage : Since the FW812 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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This catalog provides information as of August, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1806-4/4