EMH2407 Ordering number : ENA1141B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2407 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) Drain Current (Pulse) ID 6 A PW≤10μs, duty cycle≤1% 40 A Allowable Power Dissipation IDP PD When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 1.3 W Total Dissipation PT When mounted on ceramic substrate (900mm2✕0.8mm) 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A Marking : LG Ratings min typ Unit max 20 V 0.5 3 1 μA ±10 μA 1.3 5 V S Continued on next page. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 90308 TI IM / 80608 TI IM / 31908PE TI IM TC-00001276 No. A1141-1/4 EMH2407 Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=3A, VGS=4.5V ID=3A, VGS=4V Input Capacitance RDS(on)3 Ciss Ratings Conditions min typ Unit max 13 19 25 mΩ 14 20 26 mΩ 28 39 mΩ Output Capacitance Coss ID=1.5A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz Reverse Transfer Capacitance Crss VDS=10V, f=1MHz Turn-ON Delay Time td(on) See specified Test Circuit. 310 ns Rise Time tr td(off) See specified Test Circuit. 1020 ns See specified Test Circuit. 3000 ns tf See specified Test Circuit. 2250 ns 6.3 nC Turn-OFF Delay Time Fall Time 16 580 pF 95 pF 75 pF Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A 0.83 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=6A 1.9 nC Diode Forward Voltage VSD IS=6A, VGS=0V Package Dimensions 0.78 1.2 V Electrical Connection 0.2 unit : mm (typ) 7045-006 0.2 7 6 5 1 2 3 4 0.125 1 0.2 4 2.1 5 1.7 8 8 0.5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 2.0 0.05 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : EMH8 Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=3A RL=3.33Ω VOUT VIN D PW=10μs D.C.≤1% Rg G P.G EMH2407 50Ω S Rg=2kΩ No. A1141-2/4 EMH2407 ID -- VDS 6 VGS=1.5V 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 3A 40 30 20 10 0 1 0 2 3 4 5 6 7 Gate-to-Source Voltage, VGS -- V 1.0 Source Current, IS -- A = Ta C 5° °C 75 °C 25 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 td(off) 20 10 --40 tf 2 1000 --20 0 20 40 60 80 100 120 140 160 IT13204 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 IT13206 Ciss, Coss, Crss -- VDS f=1MHz 1000 Ciss, Coss, Crss -- pF 3 tr 7 5 7 Ciss 5 3 2 Coss 100 7 td(on) Crss 5 3 2 0.1 A =3.0 V, I D 0 . 4 = A VGS =3.0 V, I D 5 . 4 = VGS 2 VDD=10V VGS=4.5V 1.8 IT13202 =2 V GS 30 Diode Forward Voltage, VSD -- V SW Time -- ID 7 1.6 5A 0.01 0.2 5 7 10 IT13205 Drain Current, ID -- A 1.4 =1. , ID .5V 3 2 2 0.1 0.01 40 10 7 5 5 --2 1.2 Ambient Temperature, Ta -- °C VDS=10V 2 1.0 50 IT13203 3 0.8 RDS(on) -- Ta 0 --60 8 ⏐yfs⏐ -- ID 10 0.6 60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1.5A 0.4 Gate-to-Source Voltage, VGS -- V Ta=25°C 50 0.2 IT13201 RDS(on) -- VGS 60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 Ta=7 5°C 25°C --25° C 0 Forward Transfer Admittance, ⏐yfs⏐ -- S 2 1 0 Switching Time, SW Time -- ns 3 --25°C 2 4 25°C 3 5 Ta=7 5°C Drain Current, ID -- A 1.8V 4 7 VDS=10V V 2.0 3.5V Drain Current, ID -- A 5 ID -- VGS 7 2.5V 4.5V 4.0V 6 3 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT13207 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT13208 No. A1141-3/4 EMH2407 VGS -- Qg 100 7 5 3 2 VDS=10V ID=6A 4.0 3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC 7 IT13209 PD -- Ta 1.6 Allowable Power Dissipation, PD -- W 6 10 7 5 3 2 ASO IDP=40A ID=6A 0 1m μs s 10 DC ms 10 op 0m s era tio 1.0 7 5 3 2 0.1 7 5 3 2 PW≤10μs 10 n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT13210 When mounted on ceramic substrate (900mm2✕0.8mm) 1.4 1.3 1.2 To t 1.0 al 0.8 1u di ni t 0.6 ss ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13211 Note on usage : Since the EMH2407 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.ged objects.ged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice. PS No. A1141-4/4