TI SN65HVD1040QDRQ1

SN65HVD1040-Q1
www.ti.com
SLLS753 – FEBRUARY 2007
EMC OPTIMIZED CAN TRANSCEIVER
FEATURES
APPLICATIONS
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Qualified for Automotive Applications
Customer-Specific Configuration Control Can
Be Supported Along With Major-Change
Approval
Improved Drop-In Replacement for the
TJA1040
Meets or Exceeds the Requirements of
ISO 11898-5
GIFT / ICT Compliant
ESD Protection up to ±8 kV (Human-Body
Model) on Bus Pins
Low-Current Standby Mode With Bus
Wake-Up, <12 µA Max
High Electromagnetic Immunity (EMI)
Low Electromagnetic Emissions (EME)
Bus-Fault Protection of –27 V to 40 V
Dominant Time-Out Function
Thermal Shutdown Protection
Power-Up/Down Glitch-Free Bus Inputs and
Outputs
– High Input Impedance with Low VCC
– Monotonic Outputs During Power Cycling
GMW3122 Dual-Wire CAN Physical Layer
SAE J2284 High-Speed CAN for Automotive
Applications
SAE J1939 Standard Data Bus Interface
ISO 11783 Standard Data Bus Interface
NMEA 2000 Standard Data Bus Interface
Industrial Automation
– DeviceNet™ Data Buses (Vendor ID #806)
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DESCRIPTION
The SN65HVD1040 meets or exceeds the
specifications of the ISO 11898 standard for use in
applications employing a Controller Area Network
(CAN). The device is qualified for use in automotive
applications.
As a CAN transceiver, this device provides
differential transmit capability to the bus and
differential receive capability to a CAN controller at
signaling rates up to 1 megabit per second (Mbps) (1).
(1)
The signaling rate of a line is the number of voltage
transitions that are made per second, expressed in the units
bps (bits per second).
FUNCTIONAL BLOCK DIAGRAM
VCC
VCC
Dominant
Time-Out
Temperature
Protection
3
VCC/2
5 SPLIT
30 µA
TXD
Input
Logic
1
VCC
Driver
7 CANH
10 µA
STB
RXD
4
6
Standby Mode
8
Output
Logic
CANL
MUX
Wake-Up
Filter
Bus Monitor
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DeviceNet is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007, Texas Instruments Incorporated
SN65HVD1040-Q1
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SLLS753 – FEBRUARY 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DESCRIPTION (CONTINUED)
Designed for operation in especially harsh environments, the SN65HVD1040 features cross-wire, over-voltage,
and loss of ground protection from –27 V to 40 V, over-temperature protection, a –12 V to 12 V common-mode
range, and withstands voltage transients from –200 V to 200 V, according to ISO 7637.
STB (pin 8) provides two different modes of operation: high-speed mode or low-current standby mode. The
high-speed mode of operation is selected by connecting STB (pin 8) to ground.
If a high logic level is applied to the STB pin of the SN65HVD1040, the device enters a low-current standby
mode, while the receiver remains active in a low-power bus-monitor standby mode.
In the low-current standby mode, a dominant bit greater than 5 µs on the bus is passed by the bus-monitor
circuit to the receiver output. The local protocol controller may then reactivate the device when it needs to
transmit to the bus.
A dominant-time-out circuit in the SN65HVD1040 prevents the driver from blocking network communication with
a hardware or software failure. The time-out circuit is triggered by a falling edge on TXD (pin 1). If no rising edge
is seen before the time-out constant of the circuit expires, the driver is disabled. The circuit is then reset by the
next rising edge on TXD.
SPLIT (pin 5) is available as a VCC/2 common-mode bus voltage bias for a split-termination network (see
application information) .
The SN65HVD1040 is characterized for operation from –40°C to 125°C.
SN65HVD1040
TXD
GND
VCC
RXD
1
8
2
7
3
6
4
5
STB
CANH
CANL
SPLIT
ORDERING INFORMATION (1)
(1)
2
PART NUMBER
PACKAGE
MARKED
AS
ORDERING NUMBER
SN65HVD1040-Q1
SOIC-8
H1040Q
SN65HVD1040QDRQ1 (reel)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
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ABSOLUTE MAXIMUM RATINGS
(1) (2)
VALUE
VCC
IO
Supply voltage
–0.3 V to 7 V
Voltage range at bus terminals (CANH, CANL, SPLIT)
–27 V to 40 V
Receiver output current
20 mA
pulse (3)
VI
Voltage input, transient
VI
Voltage input range (TXD, STB)
TJ
Junction temperature
(1)
(2)
(3)
(CANH, CANL)
–200 V to 200 V
–0.5 V to 6 V
–40°C to 170°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
Tested in accordance with ISO 7637, test pulses 1, 2, 3a, 3b, 5, 6, and 7.
ELECTROSTATIC DISCHARGE PROTECTION
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Human-Body Model (2)
Electrostatic discharge (1)
Charged-Device Model (3)
VALUE
Bus terminals (CANH, CANL, SPLIT) and GND
±8 kV
All pins
±4 kV
All pins
±1 kV
±200 V
Machine Model
(1)
(2)
(3)
All typical values at 25°C.
Tested in accordance JEDEC Standard 22, Test Method A114-A.
Tested in accordance JEDEC Standard 22, Test Method C101.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
VCC
Supply voltage
4.75
5.25
V
VI or VIC
Voltage at any bus terminal (separately or common mode)
–12
12
V
VIH
High-level input voltage
2
5.25
V
VIL
Low-level input voltage
0
0.8
V
VID
Differential input voltage
–6
6
V
IOH
High-level output current
IOL
Low-level output current
TJ
Junction temperature
TXD, STB
Driver
–70
Receiver
mA
–2
Driver
70
Receiver
2
mA
150
°C
TYP
MAX
UNIT
6
12
50
70
6
10
See Thermal Characteristics table
SUPPLY CURRENT
over recommended operating conditions (unless otherwise noted)
PARAMETER
ICC
5-V supply current
TEST CONDITIONS
Standby mode
STB at VCC, VI = VCC
Dominant
VI = 0 V, 60-Ω load, STB at 0 V
Recessive
VI = VCC, No load, STB at 0 V
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MIN
µA
mA
3
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SLLS753 – FEBRUARY 2007
DEVICE SWITCHING CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
td(LOOP1)
Total loop delay, driver input to receiver output, recessive to dominant
td(LOOP2)
Total loop delay, driver input to receiver output, dominant to recessive
Figure 9, STB at 0 V
MIN
MAX
90
230
90
230
UNIT
ns
DRIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
CANH
VI = 0 V, STB at 0 V, RL = 60 Ω,
See Figure 1 and Figure 2
VO(D)
Bus output voltage (dominant)
VO(R)
Bus output voltage (recessive)
VI = 3 V, STB at 0 V, RL = 60 Ω,
See Figure 1 and Figure 2
VO
Bus output voltage (standby mode)
STB at Vcc, RL = 60 Ω,
See Figure 1 and Figure 2
VOD(D)
VOD(R)
CANL
Differential output voltage (dominant)
TYP (1)
MAX
2.9
3.4
4.5
0.8
1.75
2
–0.1
0.1
V
VI = 0 V, RL = 60 Ω, STB at 0 V,
See Figure 1, Figure 2, and Figure 3
1.5
3
V
VI = 0 V, RL = 45 Ω, STB at 0 V,
See Figure 1, Figure 2, and Figure 3
1.4
3
V
–0.012
0.012
–0.5
0.05
STB at 0 V, RL = 60 Ω, See
Figure 13
VSYM
Output symmetry (dominant or recessive)
(VO(CANH) + VO(CANL))
VOC(ss)
Steady-state common-mode output voltage
∆VOC(ss)
Change in steady-state common-mode
output voltage
IIH
High-level input current, TXD input
VI at VCC
–2
2
IIL
Low-level input current, TXD input
VI at 0 V
–50
–10
IO(off)
Power-off TXD output current
VCC at 0 V, TXD at 5 V
VCC
1.1 VCC
V
2
2.3
3
V
STB at 0 V, RL = 60 Ω, Figure 8
Short-circuit steady-state output current
30
–120
(1)
Output capacitance
µA
–85
VCANH = 12 V, CANL open,
See Figure 11
VCANL = –12 V, CANH open,
See Figure 11
mV
1
0.4
1
mA
–1
–0.6
VCANL = 12 V, CANH open,
See Figure 11
CO
V
0.9 VCC
VCANH = –12 V, CANL open,
See Figure 11
IOS(ss)
V
V
VI = 3 V, STB at 0 V, No Load
2.5
UNIT
3
VI = 3 V, STB at 0 V, RL = 60 Ω,
See Figure 1 and Figure 2
Differential output voltage (recessive)
MIN
75
120
See receiver input capacitance
All typical values are at 25°C with a 5-V supply.
DRIVER SWITCHING CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
4
TEST CONDITIONS
MIN
TYP
MAX
tPLH
Propagation delay time, low-to-high level output
25
65
120
tPHL
Propagation delay time, high-to-low level output
25
45
120
tr
Differential output signal rise time
tf
Differential output signal fall time
ten
Enable time from standby mode to dominant
See Figure 7
t(dom)
Dominant time-out
↓VI, See Figure 10
STB at 0 V, See Figure 4
25
UNIT
ns
45
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300
450
10
µs
700
µs
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SLLS753 – FEBRUARY 2007
RECEIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Positive-going input threshold voltage,
high-speed mode
VIT+
MIN
TYP (1)
MAX
800
900
UNIT
STB at 0 V, See Table 1
VIT–
Negative-going input threshold voltage,
high-speed mode
Vhys
Hysteresis voltage (VIT+ – VIT–)
VIT
Input threshold voltage, standby mode
STB at VCC
VOH
High-level output voltage
IO = –2 mA, See Figure 6
VOL
Low-level output voltage
IO = 2 mA, See Figure 6
II(off)
IO(off)
500
650
100
125
mV
500
1150
4
4.6
V
0.4
V
Power-off bus input current
CANH = CANL = 5 V,
VCC at 0 V, TXD at 0 V
3
µA
Power-off RXD leakage current
VCC at 0 V, RXD at 5 V
20
µA
CI
Input capacitance to ground, (CANH or CANL)
TXD at 3 V,
VI = 0.4 sin (4E6πt) + 2.5 V
CID
Differential input capacitance
TXD at 3 V, VI = 0.4 sin (4E6πt)
RID
Differential input resistance
RIN
Input resistance, (CANH or CANL)
RI(m)
Input resistance matching
[1 – (RIN (CANH) / RIN (CANL))] x 100%
(1)
0.2
12
pF
2
30
TXD at 3 V, STB at 0 V
V(CANH) = V(CANL)
80
15
30
40
–3
0
3
kΩ
%
All typical values are at 25°C with a 5-V supply.
RECEIVER SWITCHING CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tPLH
Propagation delay time, low-to-high-level output
tPHL
Propagation delay time, high-to-low-level output
tr
Output signal rise time
tf
Output signal fall time
tBUS
Dominant time required on bus for wake-up from standby
STB at 0 V , See Figure 6
STB at VCC, See Figure 12
MIN
TYP
MAX
UNIT
60
90
130
ns
45
70
130
ns
8
ns
8
ns
1.5
µs
5
STB PIN CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
MIN
MAX
IIH
High-level input current
PARAMETER
STB at VCC
TEST CONDITIONS
–10
0
IIL
Low-level input current
STB at 0 V
–10
0
UNIT
µA
SPLIT PIN CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VO
Output voltage
–500 µA < IO < 500 µA
IO(stb)
Leakage current, standby mode
STB at 2 V, –12 V ≤ VO ≤ 12 V
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MIN
TYP
MAX
0.3 VCC
0.5 VCC
0.7 VCC
V
5
µA
–5
UNIT
5
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SLLS753 – FEBRUARY 2007
THERMAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
θJA
Junction-to-air thermal resistance
θJB
Junction-to-board thermal resistance
θJC
Junction-to-case thermal resistance
MIN
211
High-K thermal resistance
131
mW
170
185
Tested in accordance with the Low-K or High-K thermal metric definitions of EIA/JESD51-3 for leaded surface-mount packages.
FUNCTION TABLES
DRIVER
INPUTS
OUTPUTS
TXD (1)
CANL (1)
BUS STATE
STB (1)
CANH (1)
L
L
H
L
DOMINANT
H
X
Z
Z
RECESSIVE
Open
X
Z
Z
RECESSIVE
X
H or Open
Z
Z
RECESSIVE
H = high level; L = low level; X = irrelevant; ? = indeterminate; Z = high impedance
RECEIVER
DIFFERENTIAL INPUTS
VID = V(CANH) – V(CANL)
(1)
6
°C/W
112
VCC = 5.5 V, Tj = 130°C, RL = 45 Ω, STB at 0
V,
Input to TXD at 500 kHz, 50% duty cycle
square wave, CL at RXD = 15 pF
Average power dissipation
(1)
UNIT
79
Thermal shutdown temperature
(1)
MAX
53
VCC = 5 V, Tj = 27°C, RL = 60 Ω, STB at 0 V,
Input to TXD at 500 kHz, 50% duty cycle
square wave, CL at RXD = 15 pF
PD
TYP
Low-K thermal resistance (1)
STB
OUTPUT RXD (1)
BUS STATE
VID ≥ 0.9 V
L
L
DOMINANT
VID ≥ 1.15 V
H or Open
L
DOMINANT
0.5 V < VID < 0.9 V
X
?
?
VID ≤ 0.5 V
X
H
RECESSIVE
Open
X
H
RECESSIVE
H = high level; L = low level; X = irrelevant; ? = indeterminate; Z = high impedance
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°C
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PARAMETER MEASUREMENT INFORMATION
IO(CANH)
VO (CANH)
TXD
II
VOD
RL
VO(CANH) + VO(CANL)
2
STB
VI
I I(S)
VOC
I O(CANL)
+
VI(S)
_
V O(CANL)
Figure 1. Driver Voltage, Current, and Test Definition
Dominant
3.5 V
Recessive
VO(CANH)
2.5 V
VO(CANL)
1.5 V
Figure 2. Bus Logic-State Voltage Definitions
CANH
0V
TXD
VOD
330 W ±1%
RL
+
_
STB
CANL
–2 V £ VTEST £ 7 V
330 W ±1%
Figure 3. Driver VOD Test Circuit
CANH
VCC
VI
TXD
RL = 60 Ω
±1%
VI
(See Note A)
VCC/2
0V
VO
tPLH
CL = 100 pF
(see Note B)
VO
STB
VCC/2
tPHL
0.9 V
10%
CANL
tr
VO(D)
90%
tf
0.5 V
VO(R)
Figure 4. Driver Test Circuit and Voltage Waveforms
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PARAMETER MEASUREMENT INFORMATION (continued)
CANH
RXD
VI (CANH)
IO
VID
V
+ VI (CANL)
VIC = I (CANH)
2
VO
CANL
VI (CANL)
Figure 5. Receiver Voltage and Current Definitions
3.5 V
CANH
2V
VI
RXD
VI
IO
1.5 V
tPLH
CANL
(See Note A)
2.4 V
1.5 V
STB
CL = 15 pF ±20%
(See Note B)
VO
VO
tPHL
VOH
90%
0.7 V CC
0.3 VCC
10%
tf
tr
A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 125 kHz, 50% duty cycle,
tr ≤ 6 ns, tf ≤ 6 ns, ZO = 50 Ω.
B.
CL includes instrumentation and fixture capacitance within ±20%.
Figure 6. Receiver Test Circuit and Voltage Waveforms
Table 1. Differential Input Voltage Threshold Test
INPUT
VCANH
8
OUTPUT
VCANL
|VID|
–11.1 V
–12 V
900 mV
L
12 V
11.1 V
900 mV
L
–6 V
–12 V
6V
L
12 V
6V
6V
L
–11.5 V
–12 V
500 mV
H
12 V
11.5 V
500 mV
H
–12 V
–6 V
6V
H
6V
12 V
6V
H
Open
Open
X
H
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R
VOL
VOH
VOL
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DUT
CANH
0V
VI
TXD
CL
60 W
±1%
50 %
0V
CANL
STB
VOH
NOTE: C L = 100 pF
includes
instrumentation
and fixture capacitance
within ±20%
RXD
+
VO
_
VCC
VI
50 %
VO
VOL
ten
NOTE: All V I input pulses are supplied by a generator having the
following characteristics: tr or tf ≤ 6 ns, Pulse Repetition Rate
(PRR) = 25 kHz, 50% duty cycle
15 pF ± 20%
Figure 7. ten Test Circuit and Waveform
CANH
TXD
VI
RL
CANL
STB
VOC =
VO(CANL)
VO(CANH) + VO(CANL)
2
VOC(SS)
VOC
VO(CANH)
NOTE: All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns.
Pulse Repetition Rate (PRR) = 125 kHz, 50% duty cycle.
Figure 8. Common-Mode Output Voltage Test and Waveforms
DUT
VCC
CANH
VI
TXD
STB
CL
60 W
±1%
TXD Input
0V
+
tloop1
tloop2
VOH
CANL
RXD Output
RXD
50%
50%
50%
NOTE: CL = 100 pF
includes instrumentation
and fixture capacitance
within ±20%
VOL
VO
_
15 pF ±20%
A.
All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns.
Pulse Repetition Rate (PRR) = 125 kHz, 50% duty cycle.
Figure 9. t(LOOP) Test Circuit and Waveform
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VCC
VI
TXD
RL = 60 W
±1%
VI
CL
(See Note B)
0V
VOD
VOD
(See Note A)
STB
VOD(D)
900 mV
500 mV
CANH
0V
tdom
A.
All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns.
Pulse Repetition Rate (PRR) = 500 Hz, 50% duty cycle.
B.
CL = 100 pF includes instrumentation and fixture capacitance within ±20%.
Figure 10. Dominant Time-Out Test Circuit and Waveforms
| IOS(SS) |
| IOS(P) |
IOS
200 µs
CANH
TXD
0V
0 V or V CC
12 V
STB
CANL
VIN
-12 V or 12 V
Vin
0V
or
0V
10 µs
Vin
-12 V
Figure 11. Driver Short-Circuit Current Test and Waveform
CANH
3.5 V
VCC
STB
RXD
VI
(see Note A)
CANL
1.5 V
IO
CL
(see Note B)
VI
2.65 V
0.7 µs
tBUS
1.5 V
VOH
VO
VO
400 mV
VOL
A.
For VI bit width ≤ 0.7 µs, VO = VOH. For VI bit width ≥ 5 µs, VO = VOL. VI input pulses are supplied from a generator
with the following characteristics: tr/tf < 6 ns.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 12. tBUS Test Circuit and Waveform
10
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CANH
TXD
RL
VI
VSYM = VO(CANH) + VO(CANL)
STB
CANL
VO(CANL)
A.
VO(CANH)
All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr/tf ≤ 6 ns,
Pulse Repetition Rate (PRR) = 250 kHz, 50% duty cycle.
Figure 13. Driver Output Symmetry Test Circuit
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Equivalent Input and Output Schematic Diagrams
TXD Input
VCC
RXD Output
VCC
15 Ω
4.3 kΩ
Output
Input
6V
6V
CANH Input
CANL Input
VCC
VCC
10 kΩ
10 kΩ
Input
20 kΩ
Input
10 kΩ
40 V
40 V
10 kΩ
CANH and CANL Outputs
STB Input
VCC
VCC
4.3 kΩ
Output
Input
40 V
6V
SPLIT Output
VCC
2 kΩ
Output
2 kΩ
6V
12
20 kΩ
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APPLICATION INFORMATION
VBATTERY
VCC
Vreg
(e.g., TLxxxx
TPIC7xxx)
VSUP
VCC
VCC
3
STB
Port x
7
CANH
8
HVD1040
CAN Transceiver
MCU
(e.g., TMS470)
5
RXD
RXD
TXD
TXD
SPLIT
4
1
6
2
CANL
GND
Figure 14. Typical Application Using Split Termination for Stabilization
VCC
HVD1040
3
7
VSPLIT = ½V CC in normal mode,
floating in other modes
5
6
CANH
SPLIT
CANL
2
GND
Figure 15. Split Pin Stabilization Circuitry and Application
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PACKAGE OPTION ADDENDUM
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9-Feb-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
SN65HVD1040QDRQ1
ACTIVE
SOIC
D
Pins Package Eco Plan (2)
Qty
8
2500 Green (RoHS &
no Sb/Br)
Lead/Ball Finish
CU NIPDAU
MSL Peak Temp (3)
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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