STB150NF04 N-channel 40 V - 0.005 Ω - 80 A - D2PAK STripFET™II Power MOSFET Features Type VDSS RDS(on) max ID STB150NF04 40 V < 0.007 Ω 80 A ■ 100% avalanche tested ■ Standard level gate drive ■ For through-hole version contact sales office 3 1 D²PAK Application ■ Switching applications Description This Power MOSFET is the latest development of STMicroelectronis unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STB150NF04 B150NF04 D²PAK Tape and reel July 2008 Rev 1 1/11 www.st.com 11 Electrical ratings 1 STB150NF04 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V ± 20 V VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage ID(1) Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC = 100 °C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C Peak diode recovery voltage slope 2 V/ns 0.6 J -55 to 175 °C Value Unit Thermal resistance junction-case max 0.5 °C/W Thermal resistance junction-pcb max 35 °C/W IDM (2) Ptot dv/dt (3) EAS (4) Single pulse avalanche energy Storage temperature Tstg Max. operating junction temperature Tj 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 80A, di/dt ≤ 300A/µs, VDD=80%V(BR)DSS 4. Starting Tj = 25 °C, ID=40 A, VDD=30 V Table 3. Thermal resistance Symbol Rthj-case Rthj-pcb (1) Parameter 1. When mounted on 1inch² FR-4 board, 2 oz of Cu 2/11 STB150NF04 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating @125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A V(BR)DSS Table 5. Symbol Min. Typ. Max. 40 Unit V 1 10 µA µA ±100 nA 4 V 0.005 0.007 Ω Typ. Max. Unit 2 Dynamic Parameter Test conditions Min. gfs(1) Forward transconductance VDS = 15 V, ID = 15 A 90 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f =1 MHz VGS=0 3650 1145 400 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=32 V, ID=80 A, VGS=10 V (see Figure 14) 118 20 45 150 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 3/11 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD ISDM(1) VSD (2) trr Qrr IRRM STB150NF04 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Min. Typ. Max. 15 150 70 45 VDD = 25 V, ID = 40 A RG = 4.7 Ω, VGS = 10 V (see Figure 13) Unit ns ns ns ns Source drain diode Parameter Test conditions Min Typ. Source-drain current Source-drain current (pulsed) ISD = 80 A, VGS = 0 Forward on voltage ISD = 80 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 80 A, di/dt=100 A/µs VDD = 25 V, Tj = 150 °C (see Figure 15) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/11 Test conditions 73 170 4.6 Max Unit 80 A 320 A 1.3 ns nC A A A STB150NF04 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics HV42440 ID(A) TJ=150°C TC=25°C Single pulse is ea ) Ar S(on s i D h n t ax R ni tio by M era ited p O im L 100 100µs 1ms 10 10ms 1 0.1 0.1 10 1 Figure 4. VDS(V) Output characteristics HV42470 ID(A) VGS=10V 225 HV42475 ID(A) 225 VDS=10V 200 200 6V 175 175 150 150 5V 125 125 100 100 75 75 50 4V 25 50 25 0 0 Figure 6. 1 2 3 4 5 6 7 8 9 VDS(V) Normalized BVDSS vs temperature 0 0 Figure 7. 1 2 3 4 5 6 7 8 9 VGS(V) Static drain-source on resistance HV42430 RDS(on) (Ω) VGS=10V 7.0 6.5 6.0 5.5 5.0 4.5 4.0 0 10 20 30 40 50 60 70 80 ID(A) 5/11 Electrical characteristics Figure 8. STB150NF04 Gate charge vs gate-source voltage Figure 9. Capacitance variations HV42420 C(pF) f=1MHz VGS=0 9000 8000 7000 6000 5000 Ciss 4000 3000 2000 Coss 1000 0 Figure 10. Normalized gate threshold voltage vs temperature HV42410 VGS(th) (norm) VDS=VGS ID=250µA 1.00 0.90 0.80 0.70 0.60 -75 -50 -25 0 25 50 75 100 125 150 175 TJ(°C) Figure 12. Source-drain diode forward characteristics 6/11 Crss 0 5 10 15 20 25 30 Figure 11. Normalized on resistance vs temperature VDS(V) STB150NF04 3 Test circuit Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 7/11 Package mechanical data 4 STB150NF04 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STB150NF04 Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 9/11 Revision history 5 STB150NF04 Revision history Table 8. 10/11 Document revision history Date Revision 01-Jul-2008 1 Changes First release STB150NF04 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11