STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A ■ Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive 2 1 2 3 SOT-223 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STN2NE10L N2NE10L SOT-223 Tape & reel February 2007 Rev 5 1/12 www.st.com 12 Contents STN2NE10L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STN2NE10L 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 1.8 A ID Drain current (continuous) at TC=100°C 1.3 A Drain current (pulsed) 7.2 A Total dissipation at TC = 25°C 2.5 W Derating factor 0.02 W/°C 6 V/ns 150 -65 to 150 °C IDM (1) PTOT dv/dt (2) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤7.2 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX Table 2. Thermal data Rthj-pcb Thermal resistance junction-PC Board max 50 °C/W Rthj-amb Thermal resistance junction-ambient max 60 °C/W Tl Maximum lead temperature for soldering purpose 260 °C Table 3. Symbol Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 1.8 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=25V) 20 mJ 3/12 Electrical characteristics 2 STN2NE10L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Typ. Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 1A Max. 100 Unit V VDS = Max rating, IDSS Table 5. Min. 1 10 µA µA ± 100 nA 1.7 3 V 0.33 0.38 0.4 0.45 Ω Ω VDS = Max rating @125°C 1 VGS= 5V, ID= 1A Dynamic Symbol Parameter gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 1 3 S VDS =25V, f=1 MHz, VGS=0 345 45 20 pF pF pF VDD=80V, ID = 7A VGS =5V (see Figure 13) 10 5 4 14 nC nC nC Typ. Max. Unit VDS>ID(on) x RDS(on)max, ID=1A Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 6. Symbol Parameter td(on) tr Turn-on delay time rise time td(off) tf Turn-off-delay time fall time tr(Voff) Off-voltage Rise Time Fall Time Cross-over Time tf tc 4/12 Switching times Test conditions VDD=50 V, ID=3.5A, RG=4.7Ω, VGS=5V (see Figure 14) VDD=50 V, ID=3.5A, RG=4.7Ω, VGS=5V (see Figure 14) VDD=80 V, ID=7A, RG=4.7Ω, VGS=5V (see Figure 14) Min. 7 17 ns ns 22 8 ns ns 8 9 19 ns ns ns STN2NE10L Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Source drain diode Parameter Test conditions Max Unit Source-drain current 2 A Source-drain current (pulsed) 8 A 1.5 V Forward on voltage ISD=2A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=7 A, di/dt = 100A/µs, VDD=30 V, Tj=150°C Min. Typ. 75 190 5 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STN2NE10L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STN2NE10L Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STN2NE10L Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STN2NE10L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STN2NE10L SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 10/12 STN2NE10L 5 Revision history Revision history Table 8. Revision history Date Revision Changes 19-Oct-2005 2 Preliminary datasheet 05-March-2006 3 Modified value on Table 4 19-Sep-2006 4 New template, no content change 01-Feb-2007 5 Typo mistake on Table 1. 11/12 STN2NE10L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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