STD40NF10 STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET™ II Power MOSFET Features Type VDSS RDS(on) Max ID STD40NF10 100V <0.028Ω 50A STP40NF10 100V <0.028Ω 50A ■ Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 3 1 1 DPAK 2 TO-220 Application ■ Switching applications Figure 1. Description Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility. Table 1. Device summary Order codes Marking Package Packaging STP40NF10 P40NF10 TO-220 Tube STD40NF10 D40NF10 DPAK Tape & reel September 2007 Rev 4 1/15 www.st.com 15 Contents STP40NF10 - STD40NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ................................................ 9 STP40NF10 - STD40NF10 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 DPAK VDS Drain-source voltage (vgs = 0) 100 V VGS Gate- source voltage ±20 V ID(1) Drain current (continuous) at TC = 25°C 50 A ID Drain current (continuous) at TC = 100°C 35 A Drain current (pulsed) 200 A IDM (2) PTOT Total dissipation at TC = 25°C Derating factor dv/dt(3) EAS (4) Tstg Tj 150 125 W 1 0.83 W/°C Peak diode recovery voltage slope 27 V/ns Single pulse avalanche energy 385 mj – 55 to 175 °C Storage temperature Max. operating junction temperature 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. ISD ≤50A, di/dt ≤600A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. 4. Starting Tj= 25°C, ID= 50A, VDD=25V Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case Max Unit TO-220 DPAK 1 1.2 °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/15 Electrical characteristics 2 STP40NF10 - STD40NF10 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 250 µA, VGS = 0 100 Unit V µA VDS=Max rating,TC=125°C 10 µA ±100 nA 3 4 V 0.025 0.028 Ω Typ. Max. Unit IGSS Gate-body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 25A gfs (1) Max. 1 Zero gate voltage Drain current (VGS = 0) Symbol Typ. VDS = Max rating IDSS Table 5. Min. 2 Dynamic Parameter Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. VDS = 15V, ID=28A VDS = 25V, f = 1 MHz, VGS = 0 22 S 2180 pF 298 pF 83.7 pF 46.5 VDD = 50V, ID = 40A, VGS = 10V (see Figure 17) 62 13.3 nC nC 17.5 22.5 nC Typ. Max. Unit 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5. Table 6. Symbol 4/15 Switching times Parameter Test conditions Min. td(on) tr Turn-on delay time Rise time VDD = 50V, ID = 25A RG = 4.7Ω VGS = 10V (see Figure 16) 21 46 ns ns td(off) tf Turn-off-delay time Fall time VDD = 27V, ID = 40A, RG = 4.7Ω, VGS = 10V (see Figure 16) 54 13 ns ns STP40NF10 - STD40NF10 Table 7. Symbol ISD Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Max Unit Source-drain current 80 A ISDM (1) Source-drain current (pulsed) 320 A VSD (2) Forward on voltage ISD = 50A, VGS = 0 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50A, VDD = 25V di/dt = 100A/µs, Tj = 150°C (see Figure 18) trr Qrr IRRM 80 250 6.4 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/15 Electrical characteristics STP40NF10 - STD40NF10 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for DPAK Figure 5. Thermal impedance for DPAK Figure 6. Output characteristics Figure 7. Transfer characteristics 6/15 STP40NF10 - STD40NF10 Figure 8. Transconductance Electrical characteristics Figure 9. Static drain-source on resistance Figure 10. Gate charge vs. gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs. temperature Figure 13. Normalized on resistance vs. temperature 7/15 Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/15 STP40NF10 - STD40NF10 Figure 15. Normalized breakdown voltage vs. tj STP40NF10 - STD40NF10 3 Test circuit Test circuit Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/15 Package mechanical data 4 STP40NF10 - STD40NF10 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 10/15 STP40NF10 - STD40NF10 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/15 Package mechanical data STP40NF10 - STD40NF10 DPAK MECHANICAL DATA mm. inch DIM. MAX. MIN. A A1 A2 B b4 MIN. 2.2 0.9 0.03 0.64 5.2 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 e e1 H L (L1) L2 L4 R V2 TYP 5.1 6.4 0.090 4.6 10.1 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.260 0.185 2.28 0.6 MAX. 0.200 4.7 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 12/15 STP40NF10 - STD40NF10 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 13/15 Revision history 6 STP40NF10 - STD40NF10 Revision history Table 8. 14/15 Document revision history Date Revision Changes 16-Dec-2004 1 First version. 17-Aug-2006 2 The document has been reformatted. 31-Jan-2007 3 Typo mistake on Table 2. 19-Sep-2007 4 Added DPAK STP40NF10 - STD40NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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