STB85NF55, STI85NF55 STP85NF55 N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET Features Type VDSS RDS(on) max ID STB85NF55 55 V < 0.008 Ω 80 A STI85NF55 55 V < 0.008 Ω 80 A STP85NF55 55 V < 0.008 Ω 80 A ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 3 1 1 3 12 2 D²PAK I²PAK TO-220 Applications ■ Switching application – Automotive environment Figure 1. Internal schematic diagram Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order code Marking Package Packaging STB85NF55 B85NF55 D²PAK Tape and reel STI85NF55 I85NF55 I²PAK Tube STP85NF55 P85NF55 TO-220 Tube October 2009 Doc ID 8405 Rev 9 1/15 www.st.com 15 Contents STB/I/P85NF55 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 Doc ID 8405 Rev 9 STB/I/P85NF55 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage Value Unit 55 V ± 20 V (1) Drain current (continuous) at TC = 25 °C 80 A ID(1) Drain current (continuous) at TC=100 °C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 300 W Derating factor 2.0 W/°C 10 V/ns Single pulse avalanche energy 980 mJ Operating junction temperature Storage temperature -55 to 175 °C Value Unit Rthj-case Thermal resistance junction-case max. 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W 300 °C ID IDM (2) PTOT dv/dt (3) Peak diode recovery voltage slope EAS (4) TJ Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 4. Starting TJ = 25 °C, ID = 40 A, VDD = 37.5 V Table 3. Thermal data Symbol Tl Parameter Maximum lead temperature for soldering purpose(1) 1. 1.6mm from case for 10sec Doc ID 8405 Rev 9 3/15 Electrical characteristics 2 STB/I/P85NF55 Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A V(BR)DSS Table 5. Symbol Min. Typ. Max. 55 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.0062 0.008 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15 V, ID = 40 A - 120 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 3700 900 310 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 60 V, ID = 80 A VGS =10 V 150 - 120 30 45 nC nC nC Min. Typ. Max. Unit - 25 100 70 35 - ns ns ns ns 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 6. Switching times Symbol Parameter td(on) tr td(off) tf 4/15 Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 30 V, ID= 40 A, RG=4.7 Ω, VGS=10 V Figure 14 on page 8 Doc ID 8405 Rev 9 STB/I/P85NF55 Electrical characteristics Table 7. Symbol ISD Parameter Test conditions Min Typ. Max Unit Source-drain current - 80 A (1) Source-drain current (pulsed) - 320 A (2) Forward on voltage ISD = 80 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C Figure 16 on page 8 - ISDM VSD Source drain diode trr Qrr IRRM 75 210 5.5 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 8405 Rev 9 5/15 Electrical characteristics STB/I/P85NF55 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. GC93850 ID (A) Thermal impedance GC93840 K 100 -1 10 10 1 0.1 0.1 Figure 4. 10 1 10 100 VDS(V) Output characteristics 10 -5 Figure 5. GC93620 ID (A) 256 240 192 160 128 80 64 Figure 6. 4 8 12 16 GC93640 30 6.3 20 6.2 10 6.1 8 12 16 tp(S) 2 4 6 8 6.0 ID(A) Doc ID 8405 Rev 9 VGS(V) GC93650 RDS(on) (Ω) 6.4 4 -1 Static drain-source on resistance 40 0 10 GC93630 Figure 7. GFS (S) 10 -2 10 -3 Transfer characteristics 0 0 VDS(V) Transconductance 10 -4 ID (A) 320 0 0 6/15 -2 0 20 40 60 80 ID(A) STB/I/P85NF55 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. GC93660 VGS (V) Capacitance variations 16 8000 12 6000 8 4000 4 2000 0 60 30 0 120 90 GC93680 VGS(th) (norm) 0 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature GC93670 C (pF) 10 30 20 40 VDS(V) Figure 11. Normalized on resistance vs temperature GC93690 RDS(on) (norm) 1.2 1.8 1.0 1.4 0.8 1.0 0.6 0.6 0.2 0.4 -50 0 50 Figure 12. Source-drain diode forward characteristics 0 50 100 TJ(°C) Figure 13. Normalized BVDSS vs temperature GC93700 VSD (V) -50 TJ(°C) 100 GC93710 BVDSS (norm) 1.2 1.10 0.9 1.05 0.6 1.00 0.3 0.95 0.90 0 20 40 60 80 ISD(A) Doc ID 8405 Rev 9 -50 0 50 100 TJ(°C) 7/15 Test circuits 3 STB/I/P85NF55 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform V(BR)DSS VD IDM ID VDD VDD AM01472v1 8/15 Doc ID 8405 Rev 9 AM01471v1 STB/I/P85NF55 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 8405 Rev 9 9/15 Package mechanical data STB/I/P85NF55 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 10/15 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Doc ID 8405 Rev 9 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STB/I/P85NF55 Package mechanical data I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Doc ID 8405 Rev 9 Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 11/15 Package mechanical data STB/I/P85NF55 D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.409 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0079457_M 12/15 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.4 0° Typ Doc ID 8405 Rev 9 8° STB/I/P85NF55 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.075 0.082 0.933 0.956 Doc ID 8405 Rev 9 13/15 Revision history 6 STB/I/P85NF55 Revision history Table 8. 14/15 Document revision history Date Revision Changes 21-Jun-2004 8 Updated SOA and application. 01-Oct-2009 9 Added new device in I²PAK Doc ID 8405 Rev 9 STB/I/P85NF55 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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