STD90N4F3 STP90N4F3 - STU90N4F3 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET™ Power MOSFET Features Type VDSS RDS(on) ID Pw STD90N4F3 40V <6.5mΩ 80A 110W STP90N4F3 40V <6.5mΩ 80A 110W STU90N4F3 40V <6.5mΩ 80A 110W ■ Standard threshold drive ■ 100% avalanche tested 3 3 1 1 TO-220 DPAK 3 2 2 1 IPAK Applications ■ Switching application Description Figure 1. Internal schematic diagram This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size“ strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STD90N4F3 90N4F3 DPAK Tape & reel STP90N4F3 90N4F3 TO-220 Tube STU90N4F3 90N4F3 IPAK Tube November 2007 Rev 1 1/14 www.st.com 14 Contents STD90N4F3 - STP90N4F3 - STU90N4F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 STD90N4F3 - STP90N4F3 - STU90N4F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V ± 20 V VDS Drain-source voltage (VGS=0) VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25°C 80 A ID Drain current (continuous) at TC = 100°C 65 A IDM (2) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25°C 110 W Derating factor 0.73 W/°C 8 V/ns dv/dt (3) Peak diode recovery voltage slope EAS (4) Single pulse avalanche energy 400 mJ Tj Operating junction temperature Storage temperature -55 to 175 °C Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD < 80 A, di/dt < 400A/µs, VDS < V(BR)DSS, Tj < Tjmax 4. Starting Tj = 25°C, ID = 40A, VDD = 30V Table 3. Thermal resistance Value Symbol Parameter Unit TO-220 Rthj-case Rthj-a Thermal resistance junction-case max Thermal resistance junction-ambient max Rthj-pcb (1) Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose IPAK DPAK 1.36 °C/W 62.5 100 -- °C/W -- -- 50 °C/W 300 275 -- °C 1. When mounted on 1inch² FR-4 2Oz Cu board 3/14 Electrical characteristics 2 STD90N4F3 - STP90N4F3 - STU90N4F3 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS Static Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 40 V VDS = Max rating, VDS = Max rating,Tc = 125°C 10 100 µA µA Gate body leakage current (VDS = 0) VGS = ±20 V ±200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A 6.5 mΩ IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd 2 5.4 Dynamic Parameter Test conditions Min Typ. Max. Unit Forward transconductance VDS =25 V, ID=40 A 100 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 2200 580 40 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD=20 V, ID = 80 A VGS =10 V (see Figure 14) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/14 Min. Typ. Max. Unit 40 11 8 54 nC nC nC STD90N4F3 - STP90N4F3 - STU90N4F3 Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. VDD=20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V (see Figure 16) VDD=20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V (see Figure 16) Typ. Max. Unit 15 50 ns ns 40 15 ns ns Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80 A, VGS=0 ISD=80 A, di/dt = 100 A/µs, VDD=30 V, Tj=150°C (see Figure 15) 45 60 2.8 Max. Unit 80 320 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 5/14 Electrical characteristics STD90N4F3 - STP90N4F3 - STU90N4F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature 6/14 STD90N4F3 - STP90N4F3 - STU90N4F3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/14 Test circuit 3 STD90N4F3 - STP90N4F3 - STU90N4F3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/14 Figure 18. Switching time waveform STD90N4F3 - STP90N4F3 - STU90N4F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STD90N4F3 - STP90N4F3 - STU90N4F3 DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 10/14 STD90N4F3 - STP90N4F3 - STU90N4F3 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/14 Packaging mechanical data 5 STD90N4F3 - STP90N4F3 - STU90N4F3 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12/14 inch MIN. MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 0.059 0.065 0.073 1.574 16.3 0.618 0.641 MAX. MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD90N4F3 - STP90N4F3 - STU90N4F3 6 Revision history Revision history Table 8. Document revision history Date Revision 29-Nov-2007 1 Changes First release 13/14 STD90N4F3 - STP90N4F3 - STU90N4F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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