STD3NK60ZD N-channel 600 V, 3.3 Ω, 2.4 A, DPAK SuperFREDMesh™ Power MOSFET Features Type VDSS RDS(on) max ID STD3NK60ZD 600 V < 3.6Ω 2.4 A ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Fast internal recovery diode 3 1 DPAK Application ■ Switching applications Figure 1. Internal schematic diagram Description The SuperFREDMesh™ series associates all advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology. Table 1. Device summary Order code Marking Package Packaging STD3NK60ZD 3NK60ZD DPAK Tape and reel September 2008 Rev 2 1/14 www.st.com 14 Contents STD3NK60ZD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 9 STD3NK60ZD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 2.4 A ID Drain current (continuous) at TC = 100 °C 1.51 A Drain current (pulsed) 9.6 A Total dissipation at TC = 2 5°C 45 W 0.36 W/°C 15 V/ns -55 to 150 °C Value Unit Rthj-amb Thermal resistance junction-ambient max 100 °C/W Rthj-pcb Thermal resistance junction-pcb max 50 °C/W 300 °C Max value Unit IDM (1) PTOT Derating factor dv/dt (2) Tj Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 2.4 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Tl Table 4. Symbol Thermal data Parameter Maximum lead temperature for soldering purpose Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.4 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 150 mJ 3/14 Electrical characteristics 2 STD3NK60ZD Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on Static drain-source on resistance Symbol Ciss Coss Crss Coss eq(1) Qg Qgs Qgd Typ. Max. Unit 600 V 1 50 µA µA ± 10 µA 3.75 4.5 V 3.3 3.6 Ω Typ. Max. Unit VGS = ± 20 V VGS(th) Table 6. Min. 3 VGS = 10 V, ID = 1.2 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Test conditions Min. VDS = 25 V, f = 1 MHz, VGS = 0 311 43 8 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 400 V 27 pF Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 2.4 A, VGS = 10 V (see Figure 16) 11.8 2.6 6.4 nC nC nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/14 STD3NK60ZD Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Turn-on delay time Rise time Turn-off-delay time Fall time Parameter ISD Source-drain current Source-drain current (pulsed) ISDM VSD (2) trr Qrr IRRM trr Qrr IRRM Min. Typ. Max Unit 9 14 19 14 VDD = 480 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) ns ns ns ns Source drain diode Symbol (1) Test conditions Test conditions Min. Typ. Max. Unit 2.4 9.6 A A 1.6 V Forward on voltage ISD = 10 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.4 A, di/dt = 100 A/µs VDD = 60 V (see Figure 20) 98 170 3.4 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.4 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 20) 105 184 3.5 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/14 Electrical characteristics STD3NK60ZD 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/14 STD3NK60ZD Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature 7/14 Electrical characteristics Figure 14. Maximum avalanche energy vs temperature 8/14 STD3NK60ZD STD3NK60ZD 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/14 Package mechanical data 4 STD3NK60ZD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 STD3NK60ZD Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 11/14 Package mechanical data 5 STD3NK60ZD Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 12/14 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD3NK60ZD 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 24-Jul-2008 1 First release 11-Sep-2008 2 Document status changed from preliminay data to datasheet 13/14 STD3NK60ZD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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