TSB1590 Low Vcesat PNP Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO -40V BVCEO -25V IC -1A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA Complementary part with TSD2444 Part No. TSB1590CX RF Structure ● ● -0.18V @ IC / IB = -500mA / -50mA Package Packing SOT-23 3Kpcs / 7” Reel Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -25 -6 V V Collector Current Collector Power Dissipation Thermal Resistance, Junction to Ambient IC PD RθJA -1 225 556 A mW o C/W Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2% TJ TSTG +150 - 55 to +150 o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage IC = -50uA, IE = 0 IC = -1mA, IB = 0 BVCBO BVCEO -40 -25 --- --- V V Emitter-Base Breakdown Voltage Collector Cutoff Current IE = -50uA, IC = 0 VCB = -35V, IE = 0 BVEBO ICBO -6 -- --- --100 V nA Emitter Cutoff Current Collector-Emitter Saturation Voltage VEB = -6V, IC = 0 IC / IB = -500mA / -50mA IEBO *VCE(SAT) --- --0.18 -100 -0.4 nA V Base-Emitter Saturation Voltage IC / IB = -500mA / -50mA VCE = -3V, IC = -100mA VCE = -3V, IC = -800mA *VBE(SAT) *hFE 1 *hFE 2 -120 80 -0.9 --- -1.3 560 -- V fT -- 150 -- MHz Cob -- 15 -- pF DC Current Transfer Ratio Transition Frequency VCE =-5V, IC=-50mA, f=100MHz Output Capacitance VCB = -10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/1 Version: A09 TSB1590 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Cutoff Frequency vs. Ic Figure 5. Power Derating Curve 2/2 Version: A09 TSB1590 Low Vcesat PNP Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J 3/3 SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Version: A09 TSB1590 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A09