TSC4505 High Voltage NPN Transistor SOT-23 Pin Definition: 1. Base 2. Emitter 3. Collector TO-92 Pin Definition: 1. Emitter 2. Base 3. Collector PRODUCT SUMMARY BVCEO 400V BVCBO 400V IC 300mA VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.15V @ IC / IB = 10mA / 10mA (Typ.) Complementary part with TSA1759 Part No. TSC4505CX RF TSC4505CT B0 TSC4505CT A3 Structure ● ● 0.1V @ IC / IB = 10mA / 1mA Epitaxial Planar Type NPN Silicon Transistor Package Packing SOT-23 TO-92 TO-92 3Kpcs / 7” Reel 1Kpcs / Bulk 2Kpcs / Ammo Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO 400 6 V V IC 300 0.225 mA Collector Current Collector Power Dissipation SOT-23 TO-92 Operating Junction Temperature PD TJ Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=20ms, Duty≤50% W 0.6 +150 TSTG o C o - 55 to +150 C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 BVCBO 400 -- -- V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC = 1mA, IB = 0 IE = 50uA, IC = 0 BVCEO BVEBO 400 6 --- --- V V Collector Cutoff Current Collector-Emitter Reverse Current Emitter Cutoff Current VCB = 400V, IE = 0 VCE = 300V, REB = 4kΩ VEB = 6V, IC = 0 ICBO ICER IEBO ---- ---- 10 20 10 uA nA uA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC / IB = 10mA / 1mA IC / IB = 10mA / 1mA VCE(SAT) VBE(SAT) --- 0.1 -- 0.5 1.5 V V DC Current Transfer Ratio VCE = 10V, IC = 10mA VCE =10V, IC=-10mA, f=10MHz VCB = 10V, IE = 0, f=1MHz hFE 100 -- 270 fT -- 20 -- MHz Cob -- 7 -- pF Transition Frequency Output Capacitance Conditions 1/5 Version: A07 TSC4505 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/5 Version: A07 TSC4505 High Voltage NPN Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J 3/5 SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Version: A07 TSC4505 High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H 4/5 TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 Version: A07 TSC4505 High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A07