TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -600V BVCEO -560V IC -150mA VCE(SAT) Features ● ● Ordering Information Low Saturation Voltages High Breakdown Voltage Part No. TSA1765CW RP Structure ● ● -0.5V @ IC / IB = -50mA / -10mA Package Packing SOT-223 2.5Kpcs / 13” Reel Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -600 V Collector-Emitter Voltage VCEO -560 V Emitter-Base Voltage VEBO -7 V Collector Current IC -150 Collector Current(Pulse) ICP -500 Base Current IB -50 Ptot 2 Total Power Dissipation @ TC=25ºC Operating Junction Temperature TJ Operating Junction and Storage Temperature Range TSTG mA W +150 o - 55 to +150 o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -1mA, IE = 0 BVCBO -600 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -560 -- -- V Emitter-Base Breakdown Voltage IE = -10uA, IC = 0 BVEBO -7 -- -- V Collector Cutoff Current VCB = -600V, IE = 0 ICBO -- -- -100 nA Emitter Cutoff Current VEB = -7V, IC = 0 IEBO -- -- -100 nA IC = -20mA, IB = -2mA VCE(SAT) 1 -- -- -0.2 IC = -50mA, IB = -10mA VCE(SAT) 2 -- -- -0.5 Base-Emitter Saturation Voltage IC = -50mA, IB = -10mA VBE(SAT) 1 -- -- -1.0 V Base-Emitter on Voltage VCE = -10V, IC = -50mA VBE(ON) -- -- -1.0 V VCE = -10V, IC = -1mA hFE 1 150 -- -- VCE = -10V, IC = -50mA hFE 2 80 -- 300 VCE = -10V, IC = -100mA hFE 3 -- 15-- -- fT 50 -- -- MHz Cob -- -- 8 pF Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency VCE = -20V, IE=-10mA Output Capacitance VCB = -20V, f=1MHz 1/4 V Version: B11 TSA1765 High Voltage PNP Epitaxial Planar Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating Figure 5. Safety Operation Area 2/4 Version: B11 TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Mechanical Drawing DIM A B C D E F G H I J K SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10° 16° 10° 16° 1.550 1.800 0.061 0.071 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 3/4 Version: B11 TSA1765 High Voltage PNP Epitaxial Planar Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: B11