TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -50V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882 Part No. TSD772CK B0 Structure ● ● -0.5V @ IC / IB = -2A / -200mA Package Packing TO-126 1Kpcs / Bulk Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -50 -5 -3 V V Collector Current Collector Power Dissipation DC IC Pulse o Ta = 25 C PD o Tc = 25 C Operating Junction Temperature W 10 +150 TJ Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2% A -7 (note) 1 TSTG o C o - 55 to +150 C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -50 -- -- V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC = -1mA, IB = 0 IE = -50uA, IC = 0 BVCEO BVEBO -50 -5 --- --- V V Collector Cutoff Current Emitter Cutoff Current VCB = -30V, IE = 0 VEB = 3V, IC = 0 ICBO IEBO --- --- -1 -1 uA uA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio IC / IB = -2A / -200mA IC / IB = -2A / -200mA VCE = -2V, IC = -1A *VCE(SAT) *VBE(SAT) *hFE --100 -0.3 -1 -- -0.5 -2 500 V V Transition Frequency VCE =-5V, IC=-100mA, f=100MHz fT -- 80 -- MHz Cob -- 55 -- pF Output Capacitance VCB = -10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/4 Version: A07 TSB772 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: A07 TSB772 Low Vcesat PNP Transistor TO-126 Mechanical Drawing DIM ∝1 ∝2 ∝3 ∝4 A B C D E F G H I J K L M 3/4 TO-126 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 3ºC -3ºC -3ºC 3ºC --3ºC 3ºC --3ºC 3ºC --0.150 0.153 3.81 3.91 0.275 0.279 6.99 7.09 0.531 0.610 13.50 15.50 0.285 0.303 7.52 7.72 0.034 0.041 0.95 1.05 0.028 0.031 0.71 0.81 0.048 0.052 1.22 1.32 0.170 0.189 4.34 4.80 0.095 0.105 2.41 2.66 0.045 0.055 1.14 1.39 0.045 0.055 1.14 1.39 -0.021 -0.55 0.137 0.152 3.50 3.86 Version: A07 TSB772 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A07