Preliminary TSM10N60 600V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 0.75 @ VGS =10V 4.75 General Description The TSM10N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Block Diagram Features ● ● ● ● Low RDS(ON) 0.75Ω (Max.) Low gate charge typical @ 45nC (Typ.) Low Crss typical @ 20pF (Typ.) Fast Switching Ordering Information Part No. Package Packing ITO-220 50pcs / Tube TSM10N60CI C0 N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 9.5 A 5.8 A Ta = 25ºC Continuous Drain Current Ta = 100ºC ID Pulsed Drain Current* IDM 38 A Avalanche Current (Single) (Note 2) IAS 9.5 A Single Pulse Avalanche Energy (Note 2) EAS 487 mJ Avalanche Current (Repetitive) (Note 1) IAR 38 A Repetitive Avalanche Energy (Note 1) EAR 14.5 mJ Maximum Power Dissipation @Ta = 25 C PD 43 W Operating Junction Temperature TJ 150 ºC TSTG -55 to +150 o Storage Temperature Range * Limited by maximum junction temperature 1/6 o C Version: Preliminary Preliminary TSM10N60 600V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case Limit RӨJC Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA Unit 2.90 o C/W 62.5 o C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit 600 -- -- V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS Drain-Source On-State Resistance VGS = 10V, ID = 4.75A RDS(ON) -- 0.65 0.75 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 40V, ID = 4.75A gfs -- 11 -- S Diode Forward Voltage IS = 9.5A, VGS = 0V VSD -- -- 1.4 V Qg -- 45 57 Qgs -- 6.7 -- Qgd -- 18.5 -- Ciss -- 1380 1820 Coss -- 155 210 Crss -- 20 28 Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 480V, ID = 9.5A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time td(on) -- 25 -- Turn-On Rise Time VGS = 10V, ID = 9.5A, tr -- 72 -- Turn-Off Delay Time VDD = 300V, RG = 25Ω td(off) -- 145 -- tf -- 75 -- tfr -- 400 -- nS -- 4.0 -- uC Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 9.5A, dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=9.5A, L=9.9mH, RG=25Ω 3. Pulse test: pulse width ≤300uS, duty cycle ≤2% 4. Essentially Independent of Operating Temperature 2/6 nS Version: Preliminary Preliminary TSM10N60 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/6 Version: Preliminary Preliminary TSM10N60 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/6 Version: Preliminary Preliminary TSM10N60 600V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O 5/6 ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Version: Preliminary Preliminary TSM10N60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: Preliminary