TSM1NB60 600V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 10 @ VGS =10V 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features ● ● ● Low RDS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1nC (Typ.) Low Crss typical @ 4.2pF (Typ.) Ordering Information Part No. Package Packing TSM1NB60CH C5G TO-251 75pcs / Tube TSM1NB60CP ROG TO-252 2.5Kpcs / 13” Reel TSM1NB60CW RPG SOT-223 Note: “G” denotes for Halogen Free 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit IPAK DPAK SOT-223 Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 1 A Tc = 25ºC Continuous Drain Current Tc = 100ºC ID 0.7 A Pulsed Drain Current * IDM 4 A Single Pulse Avalanche Energy (Note 2) EAS 5 mJ dv/dt 4.5 V/ns Peak Diode Recovery dv/dt (Note 3) o Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature PTOT TJ TSTG 1/8 39 39 150 -55 to +150 2.1 W ºC o C Version: A12 TSM1NB60 600V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient RӨJA Limit Unit IPAK DPAK SOT-223 2.87 2.87 -- o 60 o 110 110 C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 0.5A RDS(ON) -- 8 10 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.5 3.5 4.5 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 10V, ID = 0.5A gfs -- 0.8 -- S VDS = 480V, ID = 1A, Qg -- 6.1 -- Gate-Source Charge VGS = 10V Qgs -- 1.4 -- Gate-Drain Charge (Note 4,5) Qgd -- 3.3 -- Ciss -- 138 -- Coss -- 17.1 -- Crss -- 4.2 -- td(on) -- 7.7 -- tr -- 6.8 -- td(off) -- 15.3 -- tf -- 14.9 -- Dynamic Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS = 10V, ID = 1A, VDD = 300V, RG =25Ω (Note 4,5) nS Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS -- -- 1 A Source Current (Pulse) the MOSFET ISM -- -- 4 A 0.9 1.4 V Diode Forward Voltage IS = 1A, VGS = 0V VSD -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=1A, L=10mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤1A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature 2/8 Version: A12 TSM1NB60 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/8 Version: A12 TSM1NB60 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/8 Version: A12 TSM1NB60 600V N-Channel Power MOSFET TO-251 Mechanical Drawing DIM A b b1 b2 b3 C C1 D E e L L1 L2 L3 5/8 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.083 0.098 2.10 2.50 0.026 0.041 0.65 1.05 0.023 0.024 0.58 0.62 0.189 0.205 4.80 5.20 0.027 0.028 0.68 0.72 0.014 0.026 0.35 0.65 0.016 0.024 0.40 0.60 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 2.30 BSC 7.00 8.00 1.40 1.80 1.30 1.70 0.50 0.90 0.09 BSC 0.276 0.315 0.055 0.071 0.051 0.067 0.020 0.035 Version: A12 TSM1NB60 600V N-Channel Power MOSFET TO-252 Mechanical Drawing DIM A B C D E F G G1 H H1 J K L M 6/8 TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.30 BSC 0.090 BSC 0.402 0.425 10.20 10.80 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 0.083 0.098 2.10 2.50 0.000 0.008 0.00 0.20 0.189 0.205 4.80 5.20 0.016 0.031 0.40 0.80 0.016 0.024 0.40 0.60 0.014 0.026 0.35 0.65 0.132 0.144 3.35 3.65 0.020 0.043 0.50 1.10 0.035 0.059 0.90 1.50 0.051 0.067 1.30 1.70 Version: A12 TSM1NB60 600V N-Channel Power MOSFET SOT-223 Mechanical Drawing DIM A B C D E F G H I J K 7/8 SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10° 16° 10° 16° 1.550 1.800 0.061 0.071 Version: A12 TSM1NB60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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