TSC TSM1NB60

TSM1NB60
600V N-Channel Power MOSFET
TO-251
(IPAK)
TO-252
(DPAK)
SOT-223
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
ID (A)
600
10 @ VGS =10V
0.5
General Description
The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced
technology has been especially tailored to minimize on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and commutation mode.
Block Diagram
Features
●
●
●
Low RDS(ON) 8Ω (Typ.)
Low gate charge typical @ 6.1nC (Typ.)
Low Crss typical @ 4.2pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM1NB60CH C5G
TO-251
75pcs / Tube
TSM1NB60CP ROG
TO-252
2.5Kpcs / 13” Reel
TSM1NB60CW RPG
SOT-223
Note: “G” denotes for Halogen Free
2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
IPAK
DPAK
SOT-223
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
1
A
Tc = 25ºC
Continuous Drain Current
Tc = 100ºC
ID
0.7
A
Pulsed Drain Current *
IDM
4
A
Single Pulse Avalanche Energy (Note 2)
EAS
5
mJ
dv/dt
4.5
V/ns
Peak Diode Recovery dv/dt (Note 3)
o
Total Power Dissipation @ TC = 25 C
Operating Junction Temperature
Storage Temperature Range
Note: Limited by maximum junction temperature
PTOT
TJ
TSTG
1/8
39
39
150
-55 to +150
2.1
W
ºC
o
C
Version: A12
TSM1NB60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
RӨJC
Thermal Resistance - Junction to Ambient
RӨJA
Limit
Unit
IPAK
DPAK
SOT-223
2.87
2.87
--
o
60
o
110
110
C/W
C/W
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
600
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 0.5A
RDS(ON)
--
8
10
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2.5
3.5
4.5
V
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
10
uA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transfer Conductance
VDS = 10V, ID = 0.5A
gfs
--
0.8
--
S
VDS = 480V, ID = 1A,
Qg
--
6.1
--
Gate-Source Charge
VGS = 10V
Qgs
--
1.4
--
Gate-Drain Charge
(Note 4,5)
Qgd
--
3.3
--
Ciss
--
138
--
Coss
--
17.1
--
Crss
--
4.2
--
td(on)
--
7.7
--
tr
--
6.8
--
td(off)
--
15.3
--
tf
--
14.9
--
Dynamic
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS = 10V, ID = 1A,
VDD = 300V, RG =25Ω
(Note 4,5)
nS
Source-Drain Diode Ratings and Characteristic
Source Current
Integral reverse diode in
IS
--
--
1
A
Source Current (Pulse)
the MOSFET
ISM
--
--
4
A
0.9
1.4
V
Diode Forward Voltage
IS = 1A, VGS = 0V
VSD
-Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2: VDD = 50V, IAS=1A, L=10mH, RG =25Ω, Starting TJ=25ºC
Note 3: ISD≤1A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC
Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2%
Note 5: Essentially Independent of Operating Temperature
2/8
Version: A12
TSM1NB60
600V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
3/8
Version: A12
TSM1NB60
600V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
4/8
Version: A12
TSM1NB60
600V N-Channel Power MOSFET
TO-251 Mechanical Drawing
DIM
A
b
b1
b2
b3
C
C1
D
E
e
L
L1
L2
L3
5/8
TO-251 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
0.083
0.098
2.10
2.50
0.026
0.041
0.65
1.05
0.023
0.024
0.58
0.62
0.189
0.205
4.80
5.20
0.027
0.028
0.68
0.72
0.014
0.026
0.35
0.65
0.016
0.024
0.40
0.60
0.209
0.224
5.30
5.70
0.248
0.264
6.30
6.70
2.30 BSC
7.00
8.00
1.40
1.80
1.30
1.70
0.50
0.90
0.09 BSC
0.276
0.315
0.055
0.071
0.051
0.067
0.020
0.035
Version: A12
TSM1NB60
600V N-Channel Power MOSFET
TO-252 Mechanical Drawing
DIM
A
B
C
D
E
F
G
G1
H
H1
J
K
L
M
6/8
TO-252 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.30 BSC
0.090 BSC
0.402
0.425
10.20
10.80
0.209
0.224
5.30
5.70
0.248
0.264
6.30
6.70
0.083
0.098
2.10
2.50
0.000
0.008
0.00
0.20
0.189
0.205
4.80
5.20
0.016
0.031
0.40
0.80
0.016
0.024
0.40
0.60
0.014
0.026
0.35
0.65
0.132
0.144
3.35
3.65
0.020
0.043
0.50
1.10
0.035
0.059
0.90
1.50
0.051
0.067
1.30
1.70
Version: A12
TSM1NB60
600V N-Channel Power MOSFET
SOT-223 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
K
7/8
SOT-223 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
6.350
6.850
0.250
0.270
2.900
3.100
0.114
0.122
3.450
3.750
0.136
0.148
0.595
0.635
0.023
0.025
4.550
4.650
0.179
0.183
2.250
2.350
0.088
0.093
0.835
1.035
0.032
0.041
6.700
7.300
0.263
0.287
0.250
0.355
0.010
0.014
10°
16°
10°
16°
1.550
1.800
0.061
0.071
Version: A12
TSM1NB60
600V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
8/8
Version: A12