Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Block Diagram Features ● ● ● ● Low RDS(ON) 0.85Ω @ VGS = 10V Low gate charge typical @ 63nC (Typ.) Low Crss typical @ 120pF (Typ.) Fast Switching Ordering Information Part No. Package Packing TO-220 ITO-220 50pcs / Tube 50pcs / Tube TSM9N50CZ C0 TSM9N50CI C0 N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25ºC Ta = 100ºC Symbol Limit Unit VDS VGS IDM EAS IAR EAR PDTOT TJ TSTG 500 ±30 9 5.1 36 510 8 13 125 150 -55 to +150 V V A A A mJ A mJ W ºC o C Symbol Limit ID Pulsed Drain Current* Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) o Total Power Dissipation @Tc = 25 C Operating Junction Temperature Storage Temperature Range Thermal Performance Parameter Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA 1/7 Unit 3.1 o C/W 62.5 o C/W Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit 500 -- -- V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS Drain-Source On-State Resistance VGS = 10V, ID = 4.8A RDS(ON) -- 0.75 0.85 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 25 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 50V, ID = 4.8A gfs 5.9 -- -- S Qg -- 63 -- Qgs -- 9.3 -- Qgd -- 32 -- Ciss -- 1300 -- Coss -- 310 -- Crss -- 120 -- td(on) -- 14 -- tr -- 23 -- td(off) -- 49 -- tf -- 20 -- ISD -- -- 9 A Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 400V, ID = 9A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VDD = 250V, ID = 9A, Turn-Off Delay Time RG = 9.1Ω Turn-Off Fall Time nS Source Drain Diode Source-drain Current Diode Forward Voltage IS = 9A, VGS = 0V VSD -- -- 2.0 V Reverse Recovery Time VGS = 0V, IS = 9A, tfr -- 460 970 nS -- 4.2 8.9 uC dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=9A, L=5.7mH, RG=9.1Ω, Starting TJ=25ºC 3. Pulse test: pulse width ≤300uS, duty cycle ≤2% 4. Essentially Independent of Operating Temperature 2/7 Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/7 Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/7 Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P 5/7 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O 6/7 ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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