TSC TSM9N50CIC0

Preliminary
TSM9N50
500V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
ID (A)
500
0.85 @ VGS =10V
4.8
General Description
The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Block Diagram
Features
●
●
●
●
Low RDS(ON) 0.85Ω @ VGS = 10V
Low gate charge typical @ 63nC (Typ.)
Low Crss typical @ 120pF (Typ.)
Fast Switching
Ordering Information
Part No.
Package
Packing
TO-220
ITO-220
50pcs / Tube
50pcs / Tube
TSM9N50CZ C0
TSM9N50CI C0
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25ºC
Ta = 100ºC
Symbol
Limit
Unit
VDS
VGS
IDM
EAS
IAR
EAR
PDTOT
TJ
TSTG
500
±30
9
5.1
36
510
8
13
125
150
-55 to +150
V
V
A
A
A
mJ
A
mJ
W
ºC
o
C
Symbol
Limit
ID
Pulsed Drain Current*
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
o
Total Power Dissipation @Tc = 25 C
Operating Junction Temperature
Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
RӨJC
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨJA
1/7
Unit
3.1
o
C/W
62.5
o
C/W
Version: Preliminary
Preliminary
TSM9N50
500V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
500
--
--
V
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
Drain-Source On-State Resistance
VGS = 10V, ID = 4.8A
RDS(ON)
--
0.75
0.85
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2.0
--
4.0
V
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
IDSS
--
--
25
uA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transfer Conductance
VDS = 50V, ID = 4.8A
gfs
5.9
--
--
S
Qg
--
63
--
Qgs
--
9.3
--
Qgd
--
32
--
Ciss
--
1300
--
Coss
--
310
--
Crss
--
120
--
td(on)
--
14
--
tr
--
23
--
td(off)
--
49
--
tf
--
20
--
ISD
--
--
9
A
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 400V, ID = 9A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
VDD = 250V, ID = 9A,
Turn-Off Delay Time
RG = 9.1Ω
Turn-Off Fall Time
nS
Source Drain Diode
Source-drain Current
Diode Forward Voltage
IS = 9A, VGS = 0V
VSD
--
--
2.0
V
Reverse Recovery Time
VGS = 0V, IS = 9A,
tfr
--
460
970
nS
--
4.2
8.9
uC
dIF/dt = 100A/us
Reverse Recovery Charge
Qfr
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. VDD = 50V, IAS=9A, L=5.7mH, RG=9.1Ω, Starting TJ=25ºC
3. Pulse test: pulse width ≤300uS, duty cycle ≤2%
4. Essentially Independent of Operating Temperature
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Version: Preliminary
Preliminary
TSM9N50
500V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
3/7
Version: Preliminary
Preliminary
TSM9N50
500V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
4/7
Version: Preliminary
Preliminary
TSM9N50
500V N-Channel Power MOSFET
TO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
5/7
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.000
10.500
0.394
0.413
3.740
3.910
0.147
0.154
2.440
2.940
0.096
0.116
6.350
0.250
0.381
1.106
0.015
0.040
2.345
2.715
0.092
0.058
4.690
5.430
0.092
0.107
12.700
14.732
0.500
0.581
14.224
16.510
0.560
0.650
3.556
4.826
0.140
0.190
0.508
1.397
0.020
0.055
27.700
29.620
1.060
1.230
2.032
2.921
0.080
0.115
0.255
0.610
0.010
0.024
5.842
6.858
0.230
0.270
Version: Preliminary
Preliminary
TSM9N50
500V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
6/7
ITO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.04
10.07
0.395
0.396
6.20 (typ.)
0.244 (typ.)
2.20 (typ.)
0.087 (typ.)
∮1.40 (typ.)
∮0.055 (typ.)
15.0
15.20
0.591
0.598
0.52
0.54
0.020
0.021
2.35
2.73
0.093
0.107
13.50
13.55
0.531
0.533
1.11
1.49
0.044
0.058
2.60
2.80
0.102
0.110
4.49
4.50
0.176
0.177
1.15 (typ.)
0.045 (typ.)
3.03
3.05
0.119
0.120
2.60
2.80
0.102
0.110
6.55
6.65
0.258
0.262
Version: Preliminary
Preliminary
TSM9N50
500V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
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Version: Preliminary