CENTRAL CFMS4

CFMS4
SURFACE MOUNT
DUAL, COMMON BASE,
SILICON PNP TRANSISTORS
SOT-25 CASE
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CFMS4
consists of two silicon PNP transistors in a
common base configuration, manufactured by the
epitaxial planar process and epoxy molded in a
space saving SOT-25 surface mount package.
This device has been designed for small signal
applications where a high breakdown voltage is
required.
MARKING CODE: CFMS4
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
120
120
5.0
50
350
UNITS
V
V
V
mA
mW
TJ,Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
ICBO
IEBO
VCB=100V
VEB=4.0V
BVCBO
IC=50µA
IC=1.0mA
BVCEO
BVEBO
VCE(SAT)
hFE
IE=50µA
IC=10mA, IB=1.0 mA
VCE=6.0V, IC=2.0mA
fT
VCE=12V, IE=2.0mA, f=100MHz
UNITS
500
nA
500
nA
120
V
120
V
5.0
V
500
180
mV
820
140
MHz
R0 (20-July 2004)
Central
TM
Semiconductor Corp.
CFMS4
SURFACE MOUNT
DUAL, COMMON BASE,
SILICON PNP TRANSISTORS
SOT-25 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1, Q2
3) Emitter Q2
4) Collector Q2
5) Collector Q1
DIMENSIONS
INCHES
MILLIMETERS
MAX
MIN
MAX
SYMBOL MIN
A
0.004 0.007 0.11
0.19
B
0.016
0.40
C
0.004
0.10
D
0.039 0.047 1.00
1.20
E
0.074 0.075 1.88
1.92
F
0.037 0.038 0.93
0.97
G
0.102 0.118 2.60
3.00
H
0.059 0.067 1.50
1.70
I
0.016
0.41
J
0.110 0.118 2.80
3.00
SOT-25 (REV: R0)
MARKING CODE: CFMS4
R0 (20-July 2004)