CENTRAL CYT5551D

CYT5551D
Central
TM
Semiconductor Corp.
SURFACE MOUNT
DUAL, ISOLATED NPN
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT5551D
type consists of two (2) isolated NPN silicon
transistors packaged in an epoxy molded SOT-228
surface mount case. Manufactured by the epitaxial
planar process, this SUPERmini™ device is ideal
for high voltage amplifier applications.
MARKING CODE: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
VCBO
VCEO
180
UNITS
V
160
V
VEBO
6.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
2.0
W
TJ,Tstg
-65 to +150
°C
ΘJA
62.5
°C/W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
ICBO
VCB=120V
50
ICBO
VCB=120V, TA=100ºC
50
IEBO
VBE=4.0V
50
BVCBO
IC=100µA
180
BVCEO
IC=1.0mA
160
BVEBO
IE=10µA
6.0
VCE(SAT)
IC=10mA, IB=1.0mA
0.15
VCE(SAT)
IC=50mA, IB=5.0mA
0.20
VBE(SAT)
IC=10mA, IB=1.0mA
1.00
VBE(SAT)
IC=50mA, IB=5.0mA
1.00
hFE
VCE=5.0V, IC=1.0mA
80
VCE=5.0V, IC=10mA
80
250
hFE
hFE
VCE=5.0V, IC=50mA
30
fT
VCE=10V, IC=10mA, f=100MHz
100
300
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
20
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
200
NF
VCE=5.0V, IC=200µA, RS=10Ω
f=10Hz to 15.7kHz
8.0
UNITS
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
pF
dB
R1 (11-August 2005)
Central
TM
Semiconductor Corp.
CYT5551D
SURFACE MOUNT
DUAL, ISOLATED NPN
SILICON TRANSISTORS
SOT-228 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) COLLECTOR
2) COLLECTOR
3) COLLECTOR
4) COLLECTOR
5) EMITTER Q2
6) BASE Q2
7) EMITTER Q1
8) BASE Q1
Q1
Q1
Q2
Q2
MARKING CODE:
FULL PART NUMBER
R1 (11-August 2005)