CYT5551D Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551D type consists of two (2) isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERmini™ device is ideal for high voltage amplifier applications. MARKING CODE: FULL PART NUMBER SOT-228 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO VCEO 180 UNITS V 160 V VEBO 6.0 V Collector Current IC 600 mA Power Dissipation PD 2.0 W TJ,Tstg -65 to +150 °C ΘJA 62.5 °C/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ICBO VCB=120V 50 ICBO VCB=120V, TA=100ºC 50 IEBO VBE=4.0V 50 BVCBO IC=100µA 180 BVCEO IC=1.0mA 160 BVEBO IE=10µA 6.0 VCE(SAT) IC=10mA, IB=1.0mA 0.15 VCE(SAT) IC=50mA, IB=5.0mA 0.20 VBE(SAT) IC=10mA, IB=1.0mA 1.00 VBE(SAT) IC=50mA, IB=5.0mA 1.00 hFE VCE=5.0V, IC=1.0mA 80 VCE=5.0V, IC=10mA 80 250 hFE hFE VCE=5.0V, IC=50mA 30 fT VCE=10V, IC=10mA, f=100MHz 100 300 Cob VCB=10V, IE=0, f=1.0MHz 6.0 Cib VEB=0.5V, IC=0, f=1.0MHz 20 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 200 NF VCE=5.0V, IC=200µA, RS=10Ω f=10Hz to 15.7kHz 8.0 UNITS nA µA nA V V V V V V V MHz pF pF dB R1 (11-August 2005) Central TM Semiconductor Corp. CYT5551D SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS SOT-228 CASE - MECHANICAL OUTLINE LEAD CODE: 1) COLLECTOR 2) COLLECTOR 3) COLLECTOR 4) COLLECTOR 5) EMITTER Q2 6) BASE Q2 7) EMITTER Q1 8) BASE Q1 Q1 Q1 Q2 Q2 MARKING CODE: FULL PART NUMBER R1 (11-August 2005)