PROCESS CP289 Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip PROCESS DETAILS Die Size 167 x 167 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 59 x 29 MILS Emitter Bonding Pad Area 64 x 28 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Ti/Ni/Ag - 3,000Å, 10,000Å, 10,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 558 PRINCIPAL DEVICE TYPES MJE13009 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (5- January 2006)