ISC MJE13009

Inchange Semiconductor
Product Specification
MJE13009
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High voltage ,high speed
APPLICATIONS
・Particularly suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
700
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current (DC)
12
A
ICM
Collector current-Peak
24
A
IE
Emitter current
18
A
IEM
Emitter current-Peak
36
A
IB
Base current
6
A
IBM
Base current-Peak
12
A
PD
Total power dissipation
Ta=25℃
2
TC=25℃
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
1.25
℃/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
MJE13009
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=1A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A ;IB=1.6A
TC=100℃
1.5
2.0
V
VCEsat-3
Collector-emitter saturation voltage
IC=12A; IB=3A
3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=5A; IB=1A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=8A; IB=1.6A
TC=100℃
1.6
1.5
V
ICEV
Collector cut-off current
VCEV=Rated value,
VBE(off)=1.5V dc;TC=100℃
1.0
5.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
1.0
mA
hFE-1
DC current gain
IC=5A ; VCE=5V
8
40
hFE-2
DC current gain
IC=8A ; VCE=5V
6
30
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
4
Collector outoput capacitance
IE=0; f=0.1MHz ; VCB=10V
fT
COB
CONDITIONS
MIN
TYP.
MAX
400
UNIT
V
MHz
180
pF
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=125V ,IC=8A
IB1=-IB2=1.6A
tp=25μs
duty cycle≤1%
2
0.06
0.1
μs
0.45
1.0
μs
1.30
3.0
μs
0.20
0.7
μs
Inchange Semiconductor
Product Specification
MJE13009
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.10mm)
3
Inchange Semiconductor
Product Specification
MJE13009
Silicon NPN Power Transistors
4
Inchange Semiconductor
Product Specification
MJE13009
Silicon NPN Power Transistors
5