STMICROELECTRONICS MJE13009

MJE13009
SILICON NPN SWITCHING TRANSISTOR
■
SGS-THOMSON PREFERRED SALESTYPE
DESCRIPTION
The MJE13009 is a multiepitaxial mesa NPN
transistor. It is mounted in Jedec TO-220 plastic
package, intended for use in motor controls,
switching regulators, deflection circuits, etc.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VCEV
Collector-Emitter Voltage (VBE = -1.5 V)
700
V
VEBO
Emitter-Base Voltage (I C = 0)
9
V
A
IC
Collector Current
12
ICM
Collector Peak Current (t p ≤ 10 ms)
24
A
6
A
IB
I BM
IE
Base Current
Base Peak Current (t p ≤ 10 ms)
12
A
Emitter Current
18
A
36
A
I EM
Emitter Peak Current
Pt ot
Tot al Power Dissipation at T c ≤ 25 C
T stg
Storage Temperature
Tj
o
Max. Ope rating Junction Temperature
September 1997
100
W
-65 to 150
o
C
150
o
C
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MJE13009
THERMAL DATA
R thj-ca se
Thermal Resistance Junction-case
Max
o
1.25
C/W
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol
ICEV
I EBO
Parameter
Collecto r Cut-of f
Current
Emitter Cut-off
Current (I C = 0)
V CEO(su s)∗ Collecto r-Emitter
Sustaining Voltage
Test Conditions
Max.
Unit
VCEV = rated value
VBE(off ) = 1.5 V
VCEV = rated value
VEB(off ) = 1.5 V
T cas e = 100o C
1
mA
5
mA
VEB = 9 V
1
mA
I C = 10 mA
V CE(sat )∗
Collecto r-Emitter
Saturation Voltage
IC = 5 A
IC = 8 A
I C = 12 A
IC = 8 A
T cas e = 100o C
VBE( sat) ∗
Base-Emitter
Saturation Voltage
IC = 5 A
IC = 8 A
IC = 8 A
T cas e = 100o C
hFE ∗
fT
C OB
t on
ts
tf
Min.
IE = 0
IB
IB
IB
IB
=
=
=
=
IB = 1 A
IB = 1.6 A
IB = 1.6 A
IC = 5 A
IC = 8 A
VCE = 5 V
VCE = 5 V
8
6
Transistor Frequ ency
I C = 500 mA
VCE = 10 V
4
Output Capacita nce
VCB = 10 A
f = 0.1 MHz
RESISTIVE LOAD
VCC = 125 V
I B1 = -I B2 = 1.6 A
Duty Cycle ≤ 1%
Safe Operating Areas
V
1A
1.6 A
3A
1.6 A
IE = 0
IC = 8A
t p = 25 µs
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 %
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400
DC Current Gain
Turn-on Time
Storage Time
Fall Time
Typ.
Derating Curve
1
1. 5
3
V
V
V
2
V
1. 2
1. 6
V
V
1. 5
V
40
30
MHz
180
pF
1. 1
3
0. 7
µs
µs
µs
MJE13009
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
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MJE13009
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
MJE13009
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
1.27
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
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MJE13009
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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