MJE13009 SILICON NPN SWITCHING TRANSISTOR ■ SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitter Voltage (IB = 0) 400 V VCEV Collector-Emitter Voltage (VBE = -1.5 V) 700 V VEBO Emitter-Base Voltage (I C = 0) 9 V A IC Collector Current 12 ICM Collector Peak Current (t p ≤ 10 ms) 24 A 6 A IB I BM IE Base Current Base Peak Current (t p ≤ 10 ms) 12 A Emitter Current 18 A 36 A I EM Emitter Peak Current Pt ot Tot al Power Dissipation at T c ≤ 25 C T stg Storage Temperature Tj o Max. Ope rating Junction Temperature September 1997 100 W -65 to 150 o C 150 o C 1/6 MJE13009 THERMAL DATA R thj-ca se Thermal Resistance Junction-case Max o 1.25 C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol ICEV I EBO Parameter Collecto r Cut-of f Current Emitter Cut-off Current (I C = 0) V CEO(su s)∗ Collecto r-Emitter Sustaining Voltage Test Conditions Max. Unit VCEV = rated value VBE(off ) = 1.5 V VCEV = rated value VEB(off ) = 1.5 V T cas e = 100o C 1 mA 5 mA VEB = 9 V 1 mA I C = 10 mA V CE(sat )∗ Collecto r-Emitter Saturation Voltage IC = 5 A IC = 8 A I C = 12 A IC = 8 A T cas e = 100o C VBE( sat) ∗ Base-Emitter Saturation Voltage IC = 5 A IC = 8 A IC = 8 A T cas e = 100o C hFE ∗ fT C OB t on ts tf Min. IE = 0 IB IB IB IB = = = = IB = 1 A IB = 1.6 A IB = 1.6 A IC = 5 A IC = 8 A VCE = 5 V VCE = 5 V 8 6 Transistor Frequ ency I C = 500 mA VCE = 10 V 4 Output Capacita nce VCB = 10 A f = 0.1 MHz RESISTIVE LOAD VCC = 125 V I B1 = -I B2 = 1.6 A Duty Cycle ≤ 1% Safe Operating Areas V 1A 1.6 A 3A 1.6 A IE = 0 IC = 8A t p = 25 µs ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 % 2/6 400 DC Current Gain Turn-on Time Storage Time Fall Time Typ. Derating Curve 1 1. 5 3 V V V 2 V 1. 2 1. 6 V V 1. 5 V 40 30 MHz 180 pF 1. 1 3 0. 7 µs µs µs MJE13009 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 MJE13009 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 MJE13009 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/6 MJE13009 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A . .. 6/6