PROCESS CPD98V Schottky Diode Silicon High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 141,234 PRINCIPAL DEVICE TYPES CMUSH2-4 Series R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD98V Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m