CENTRAL CPD98V_10

PROCESS
CPD98V
Schottky Diode
Silicon High Current Schottky Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
11 x 11 MILS
Die Thickness
7.1 MILS
Anode Bonding Pad Area
5.4 x 5.4 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
141,234
PRINCIPAL DEVICE TYPES
CMUSH2-4 Series
R2 (22-March 2010)
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PROCESS
CPD98V
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m