BC327 SERIES PNP GENERAL PURPOSE TRANSISTORS 5 VOLTAGE 45 POWER 625mW FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = -800mA MECHANICAL DATA 1 COLLECTOR Case: TO-92 Terminals: Solderable per MIL-STD-202, Method 208 2 BASE 1 Device Marking: BC327-16: 7A 2 BC327-25: 7B 3 BC327-40: 7C 3 EMITTER TO-92 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Value UNIT Collector - Emitter Voltage VCE0 -45 V Collector - Base Voltage VCB0 -50 V Emitter - Base Voltage VEB0 -5.0 V IC -800 mA PTOT 625 mW TJ , TSTG -55 to 150 ℃ PARAMETER SYMBOL Value UNIT Thermal Resistance , Junction to Ambient (Note 1) RθJ A 200 ℃/W Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range THERMAL CHARACTERISTICS Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector - Emitter Breakdown Voltage (IC=-10mA, IB=0) V(BR)CE0 -45 - - V Collector - Emitter Breakdown Voltage (VEB=0V, IC=-100uA) V(BR)CES -50 - - V Emitter - Base Breakdown Voltage (IE=-10uA, IC=0) V(BR)EB0 -5.0 - - V Emitter-Base Cutoff Current (VEB=-4V) IEBO - - -100 nA Collector-Base Cutoff Current (VCB=-30V, IE=0) ICBO - - -100 nA Collector Cutoff Current (VCE=-45V, VBE=0) ICES - - -100 nA DC Current Gain BC337-16 100 - 250 (IC=-100mA,VCE=-1V) BC337-25 160 - 400 250 - 630 40 - - BC337-40 hFE (IC=-300mA, VCE=-1V) - Collector – Emitter Saturation Voltage (IC=-500mA, IB=-50mA) VCE(SAT) - - -0.7 V Base – Emitter Voltage (IC=-300mA, VCE=-1.0V) VBE(ON) - - -1.2 V CCBO - 5.0 - pF fT - 210 - MHz Collector - Base Capacitance (VCB=-10V, IE=0, f=1MHz) Current Gain – Bandwidth Product (IC=-10mA, VCE=-5V, f=100MHz) ELECTRICAL CHARACTERISTICS CURVES 1000 1000 TJ = 150°C TJ = 150°C 100 hFE hFE TJ = 25°C TJ = 25°C 100 TJ = 100°C TJ = 100°C V CE = 1V 10 0.01 0.1 1 10 V CE = 1V 100 10 0.01 1000 Colle ctor Cur r e nt, IC (m A) 0.1 1 10 100 1000 Colle cto r Cur r e nt, IC (m A) Fig. 1. BC337-16 Typical hFE vs. IC Fig. 2. BC337-25 Typical hFE vs. IC 100 1000 TJ = 150°C CIB (EB) 100 Capacitance, C (pF hFE TJ = 25°C TJ = 100°C 10 COB (EB) V CE = 1V 10 0.01 1 0.1 1 10 100 Colle ctor Curre nt, IC (m A) Fig. 3. BC337-40 Typical hFE vs. IC 1000 0.1 1 10 Reverse Voltage, VR (V) Fig. 4. Typical Capacitances 100 TO-92 PACKAGE OUTLINE TO-92 ORDER INFORMATION BC327-xx B – Bulk 5,000 per box BC327-xx T/R – Tape and Reel, 2,000 per reel BC327-xx A/B – Ammo Pack, 2,000 Per Ammo Pack Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.