FREESCALE MMG3010NT1

Freescale Semiconductor
Technical Data
Document Number: MMG3010NT1
Rev. 1, 8/2005
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
MMG3010NT1
The MMG3010NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
P C S , B WA , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l
small-signal RF.
0 -6000 MHz, 15 dB
17 dBm
InGaP HBT
Features
• Frequency: 0 to 6000 MHz
• P1dB: 17 dBm @ 900 MHz
• Small-Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 31 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT -89 Surface Mount Package
• Pb -Free and RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Typical Performance (1)
Characteristic
3
CASE 1514-01, STYLE 1
SOT-89
PLASTIC
Table 2. Maximum Ratings
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small-Signal Gain
(S21)
Gp
15
14
12
dB
Input Return Loss
(S11)
IRL
-15
-17
-22
dB
Output Return Loss
(S22)
ORL
-25
-25
-15
dB
Power Output @1dB
Compression
P1db
17
16.5
15.5
dBm
IP3
31
30
28
dBm
Third Order Output
Intercept Point
12
Rating
Symbol
Value
Unit
Supply Voltage (2)
VCC
7
V
(2)
ICC
300
mA
RF Input Power
Pin
10
dBm
Storage Temperature Range
Tstg
-65 to +150
°C
Junction Temperature (3)
TJ
150
°C
Supply Current
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150°C.
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 54 mA, TC = 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value (4)
Unit
RθJC
83
°C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3010NT1
1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small-Signal Gain (S21)
Characteristic
Gp
14
15
—
dB
Input Return Loss (S11)
IRL
—
-15
—
dB
Output Return Loss (S22)
ORL
—
-25
—
dB
Power Output @ 1dB Compression
P1dB
—
17
—
dBm
Third Order Output Intercept Point
IP3
—
31
—
dBm
Noise Figure
NF
—
4.5
—
dB
Supply Current (1)
ICC
46
54
63
mA
Supply Voltage (1)
VCC
—
5
—
V
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3010NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Functional Pin Description
Pin
Number
2
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22-A114)
1A (Minimum)
Machine Model (per EIA/JESD 22-A115)
A (Minimum)
Charge Device Model (per JESD 22-C101)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22-A113, IPC/JEDEC J-STD-020
Rating
Package Peak Temperature
Unit
1
260
°C
MMG3010NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
TC = 85°C
25°C
−10
S11
15
S11, S22 (dB)
Gp, SMALL−SIGNAL GAIN (dB)
20
-40°C
10
−20
S22
−30
VCC = 5 Vdc
ICC = 54 mA
VCC = 5 Vdc
−40
5
1
0
2
3
0
4
4
3
Figure 2. Small -Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
P1dB, 1 dB COMPRESSION POINT (dBm)
19
16
900 MHz
15
2140 MHz
1960 MHz
14
13
2600 MHz
12
3500 MHz
11
VCC = 5 Vdc
ICC = 54 mA
10
8
9
10
11
12
13
14
17
16
15
14
VCC = 5 Vdc
ICC = 54 mA
13
0.5
16
1
1.5
2
2.5
3
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
Figure 4. Small -Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
100
90
80
70
60
50
40
30
20
10
0
4
18
12
15
4.2
4.4
4.6
4.8
5
5.2
5.4
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Gp, SMALL−SIGNAL GAIN (dB)
2
f, FREQUENCY (GHz)
17
ICC, COLLECTOR CURRENT (mA)
1
f, FREQUENCY (GHz)
3.5
36
33
30
27
VCC = 5 Vdc
ICC = 54 mA
1 MHz Tone Spacing
24
21
0
1
2
3
VCC, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
4
MMG3010NT1
4
RF Device Data
Freescale Semiconductor
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS
36
33
30
27
24
f = 900 MHz
1 MHz Tone Spacing
21
4.95
4.9
5
5.05
5.1
33
32
31
30
29
28
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
27
26
−40
−20
40
60
80
100
Figure 9. Third Order Output Intercept Point
versus Case Temperature
105
−30
−40
MTTF (YEARS)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
20
T, TEMPERATURE (_C)
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
−50
−60
104
VCC = 5 Vdc
ICC = 54 mA
f = 900 MHz
1 MHz Tone Spacing
−70
−80
−3
103
0
6
3
9
12
120
15
125
Pout, OUTPUT POWER (dBm)
6
4
2
VCC = 5 Vdc
ICC = 54 mA
0
1
2
3
135
140
145
150
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 54 mA
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
8
0
130
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Third Order Intermodulation versus
Output Power
NF, NOISE FIGURE (dB)
0
4
−20
VCC = 5 Vdc, ICC = 54 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−40
−50
−60
−70
−3
0
3
6
9
12
f, FREQUENCY (GHz)
Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single -Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
15
MMG3010NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40-300 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
Z4
Z5
VCC
C1
Z1, Z5
Z2
Z3
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
RF
OUTPUT
C2
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
20
S21
S21, S11, S22 (dB)
10
R1
0
C4
C3
L1
−10
S11
C2
C1
−20
−30
S22
VCC = 5 Vdc
ICC = 54 mA
MMG30XX
Rev 2
−40
0
100
200
300
400
500
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3
0.01 µF Chip Capacitors
0603A103JAT2A
AVX
C4
1000 pF Chip Capacitor
0603A102JAT2A
AVX
L1
470 nH Chip Inductor
BK2125HM471
Taiyo Yuden
R1
0 W Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3010NT1
6
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 300-3600 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
Z4
Z5
VCC
C1
Z1, Z5
Z2
Z3
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
RF
OUTPUT
C2
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
20
S21, S11, S22 (dB)
10
S21
R1
0
C4
C3
L1
−10
S11
C2
C1
−20
−30
VCC = 5 Vdc
ICC = 54 mA
S22
−40
300
800
1300
1800
2300
2800
3300
MMG30XX
Rev 2
3800
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
150 pF Chip Capacitors
06035A151JAT2A
AVX
C3
0.01 µF Chip Capacitor
0603A103JAT2A
AVX
C4
1000 pF Chip Capacitor
0603A102JAT2A
AVX
L1
56 nH Chip Inductor
HK160856NJ-T
Taiyo Yuden
R1
0 W Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3010NT1
RF Device Data
Freescale Semiconductor
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S -Parameters at VCC = 5 Vdc, ICC = 54 mA, TC = 255C
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.1
0.18961
174.356
6.08599
176.121
0.10045
-1.147
0.01890
-117.716
0.15
0.18946
172.591
6.06991
173.709
0.10051
-1.684
0.01961
-119.073
0.2
0.18931
170.087
6.05558
171.476
0.10055
-2.764
0.02022
-121.834
0.25
0.18916
168.286
6.04027
169.492
0.10060
-3.23
0.02108
-123.647
0.3
0.18900
166.103
6.03125
167.447
0.10065
-3.883
0.02178
-125.155
0.35
0.18887
163.926
6.01832
165.299
0.10069
-4.61
0.02240
-127.572
0.4
0.18873
161.691
6.00664
163.288
0.10073
-5.218
0.02324
-129.668
0.45
0.18856
159.363
5.99750
161.184
0.10078
-5.914
0.02417
-131.224
0.5
0.18844
157.207
5.98612
159.055
0.10085
-6.577
0.02490
-133.739
0.55
0.18829
154.948
5.97231
157.036
0.10090
-7.176
0.02589
-135.854
0.6
0.18813
152.775
5.95537
154.979
0.10098
-7.816
0.02683
-137.345
0.65
0.18799
150.556
5.94078
152.921
0.10111
-8.444
0.02784
-139.784
0.7
0.18783
148.43
5.92660
150.895
0.10103
-9.124
0.02895
-141.384
0.75
0.18769
146.278
5.90891
148.835
0.10115
-9.76
0.03030
-143.84
0.8
0.18753
144.103
5.88998
146.803
0.10113
-10.388
0.03176
-145.852
0.85
0.18738
142.071
5.86905
144.751
0.10130
-11.106
0.03328
-147.52
0.9
0.18723
140.126
5.84578
142.751
0.10126
-11.715
0.03472
-148.773
0.95
0.18703
138.174
5.82588
140.772
0.10142
-12.347
0.03683
-150.721
1
0.18689
136.334
5.80670
138.776
0.10134
-13.049
0.03847
-153.215
1.05
0.18674
134.574
5.77963
136.782
0.10156
-13.635
0.04077
-155.358
1.1
0.18657
132.862
5.75495
134.777
0.10146
-14.317
0.04304
-159.06
1.15
0.18643
131.57
5.72982
132.79
0.10159
-14.945
0.04551
-162.691
1.2
0.18629
130.147
5.70191
130.817
0.10169
-15.594
0.04827
-166.671
1.25
0.18613
128.841
5.67762
128.866
0.10184
-16.271
0.05112
-170.497
1.3
0.18599
127.621
5.65132
126.933
0.10183
-16.958
0.05460
-174.453
1.35
0.18582
126.515
5.62394
124.986
0.10196
-17.615
0.05759
-178.275
1.4
0.18568
125.418
5.59479
123.074
0.10201
-18.236
0.06146
178.051
1.45
0.18567
124.471
5.56625
121.175
0.10211
-18.888
0.06306
174.258
1.5
0.18569
123.602
5.54822
119.257
0.10220
-19.552
0.06362
170.85
1.55
0.18591
122.392
5.52432
117.274
0.10258
-20.344
0.06362
163.521
1.6
0.18645
120.668
5.49674
115.354
0.10272
-20.962
0.06377
160.673
1.65
0.18767
119.047
5.46526
113.429
0.10283
-21.702
0.06570
158.125
1.7
0.18855
117.338
5.43646
111.53
0.10301
-22.327
0.06858
155.716
1.75
0.19030
115.719
5.40925
109.673
0.10315
-23.09
0.07094
153.133
1.8
0.19186
114.043
5.38177
107.795
0.10333
-23.804
0.07392
151.055
1.85
0.19364
112.379
5.35341
105.878
0.10340
-24.547
0.07711
148.881
1.9
0.19581
110.938
5.32341
104.011
0.10356
-25.192
0.08039
147.016
1.95
0.19775
109.449
5.29221
102.117
0.10384
-25.884
0.08395
145.259
2
0.20022
108.079
5.25998
100.28
0.10401
-26.62
0.08764
143.574
2.05
0.20274
106.526
5.22900
98.422
0.10405
-27.296
0.09155
141.882
2.1
0.20483
105.054
5.20224
96.556
0.10413
-28.065
0.09523
140.434
2.15
0.20673
103.673
5.16895
94.728
0.10441
-28.819
0.09969
138.992
2.2
0.21006
102.263
5.13639
92.885
0.10441
-29.517
0.10388
137.594
2.25
0.21183
100.83
5.10466
91.074
0.10468
-30.238
0.10812
136.199
2.3
0.21443
99.385
5.07001
89.25
0.10472
-30.97
0.11217
134.891
2.35
0.21661
98.005
5.03818
87.453
0.10489
-31.768
0.11632
133.499
MMG3010NT1
8
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S -Parameters at VCC = 5 Vdc, ICC = 54 mA, TC = 255C (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2.4
0.21882
96.635
5.00516
85.611
0.10502
-32.469
0.12050
132.176
2.45
0.22193
95.395
4.97224
83.821
0.10521
-33.265
0.12557
130.946
2.5
0.22303
93.907
4.93831
82.052
0.10527
-34.008
0.12957
129.503
2.55
0.22524
92.5
4.90747
80.256
0.10541
-34.706
0.13384
128.151
2.6
0.22731
91.106
4.87540
78.504
0.10567
-35.467
0.13842
126.605
2.65
0.22921
89.599
4.84438
76.72
0.10587
-36.255
0.14269
125.06
2.7
0.23072
88.26
4.81170
74.931
0.10582
-37.021
0.14690
123.585
2.75
0.23259
86.873
4.77720
73.147
0.10600
-37.804
0.15188
122.036
120.364
2.8
0.23443
85.515
4.74514
71.382
0.10623
-38.579
0.15645
2.85
0.23625
84.122
4.71210
69.615
0.10637
-39.349
0.16075
118.48
2.9
0.23786
82.84
4.68334
67.904
0.10648
-40.152
0.16529
116.779
2.95
0.23979
81.448
4.64992
66.078
0.10664
-41.004
0.16969
114.827
3
0.24125
80.072
4.61988
64.334
0.10700
-41.819
0.17439
112.861
3.05
0.24422
78.711
4.58846
62.607
0.10702
-42.586
0.17909
111.23
3.1
0.24610
77.547
4.55812
60.863
0.10736
-43.392
0.18404
109.114
3.15
0.24792
76.337
4.52495
59.115
0.10733
-44.248
0.18914
107.101
3.2
0.25072
75.174
4.49699
57.356
0.10748
-45.078
0.19427
105.076
3.25
0.25383
73.947
4.46681
55.612
0.10765
-45.892
0.19983
102.924
3.3
0.25590
72.848
4.43561
53.877
0.10784
-46.753
0.20478
100.877
3.35
0.25874
71.738
4.40430
52.133
0.10813
-47.687
0.21036
98.897
3.4
0.26159
70.666
4.37458
50.384
0.10814
-48.565
0.21586
96.818
3.45
0.26531
69.68
4.34458
48.649
0.10821
-49.382
0.22115
94.763
3.5
0.26829
68.707
4.31385
46.916
0.10846
-50.314
0.22678
92.769
3.55
0.27180
67.687
4.28470
45.167
0.10856
-51.229
0.23264
90.836
3.6
0.27525
66.773
4.25389
43.44
0.10871
-52.108
0.23850
88.858
MMG3010NT1
RF Device Data
Freescale Semiconductor
9
1.7
7.62
0.305 diameter
2.49
3.48
5.33
2.54
1.27
1.27
0.58
0.86
0.64
3.86
Recommended Solder Stencil
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3010NT1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
3
4
4.70
4.40
A
1.87
1.79
0.15 M C A B
0.60
0.40
B
2X R0.15 TYP
1.70
1.40
3
4
2.70
2.40
2X 4° TYP
4.50
3.70
1.30
0.70
5
1
2
2X
3
0.20 M C B
0.48
0.38
0.48
0.38
0.15 M C A B
0.15 M C A B
0.58
0.48
0.46
0.40
0.15 M C A B
2X 4 ° TYP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE
BURRS SHALL NOT EXCEED 0.5MM PER END. DIMENSION DOES
NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD
FLASH OR PROTRUSION SHALL NOT EXCEED 0.5MM PER SIDE.
4. DIMENSIONS ARE DETERMINED AT THE OUTMOST EXTREMES
OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR
BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING
ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
E.P.
2X R0.20
4X
0.10 C
SEATING PLANE
0.65
0.55
1.35
1.25
C
1.50
1.50
1.65
1.55
STYLE 1:
PIN 1. RF INPUT
2. GROUND
3. RF OUTPUT
CASE 1514-01
ISSUE C
SOT -89
PLASTIC
BOTTOM VIEW
MMG3010NT1
RF Device Data
Freescale Semiconductor
11
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MMG3010NT1
Document Number: MMG3010NT1
Rev. 1, 8/2005
12
RF Device Data
Freescale Semiconductor