FREESCALE MMG3014NT1

Freescale Semiconductor
Technical Data
Document Number: MMG3014NT1
Rev. 0, 4/2008
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3014NT1
Broadband High Linearity Amplifier
The MMG3014NT1 is a General Purpose Amplifier that is internally
input matched and internally output prematched. It is designed for a broad
range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 4000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small - signal RF.
40 - 4000 MHz, 19.5 dB
25 dBm
InGaP HBT
Features
• Frequency: 40 - 4000 MHz
• P1dB: 25 dBm @ 900 MHz
• Small - Signal Gain: 19.5 dB @ 900 MHz
• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
• Single 5 Volt Supply
• Active Bias
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
Table 1. Typical Performance (1)
3
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Table 2. Maximum Ratings
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small - Signal Gain
(S21)
Gp
19.5
15
10
dB
Input Return Loss
(S11)
IRL
- 25
- 12
-8
dB
Output Return Loss
(S22)
ORL
- 11
−13
- 19
dB
Power Output @1dB
Compression
P1db
25
25.8
25
dBm
IP3
40.5
40.5
40
dBm
Third Order Output
Intercept Point
12
Rating
Symbol
Value
Unit
Supply Voltage
VCC
6
V
Supply Current
ICC
300
mA
RF Input Power
Pin
15
dBm
Storage Temperature Range
Tstg
- 65 to +150
°C
Junction Temperature (2)
TJ
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 135 mA, TC = 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value (3)
Unit
RθJC
27.4
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3014NT1
1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small - Signal Gain (S21)
Characteristic
Gp
18.5
19.5
—
dB
Input Return Loss (S11)
IRL
—
- 25
—
dB
Output Return Loss (S22)
ORL
—
- 11
—
dB
Power Output @ 1dB Compression
P1dB
—
25
—
dBm
Third Order Output Intercept Point
IP3
—
40.5
—
dBm
Noise Figure
NF
—
5.7
—
dB
Supply Current (1)
ICC
110
135
160
mA
Supply Voltage (1)
VCC
—
5
—
V
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3014NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Functional Pin Description
Pin
Number
2
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Conditions/Test Methodology
Class
Human Body Model (per JESD 22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD 22 - A115)
A (Minimum)
Charge Device Model (per JESD 22 - C101)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
MMG3014NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
20
S11
S11, S22 (dB)
Gp, SMALL−SIGNAL GAIN (dB)
25
15
TC = −40°C
25°C
VCC = 5 Vdc
ICC = 135 mA
85°C
5
−10
0
1
2
3
1
0
4
2
3
4
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small - Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
23
P1dB, 1 dB COMPRESSION POINT (dBm)
26
VCC = 5 Vdc
ICC = 135 mA
21
900 MHz
19
17
1960 MHz
15
2140 MHz
13
2600 MHz
11
3500 MHz
9
6
10
25
VCC = 5 Vdc
ICC = 135 mA
24
14
18
22
0.5
26
1
1.5
2
2.5
3
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
Figure 4. Small - Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
200
180
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Gp, SMALL−SIGNAL GAIN (dB)
S22
10
VCC = 5 Vdc
ICC, COLLECTOR CURRENT (mA)
−5
3.5
42
40
VCC = 5 Vdc
ICC = 135 mA
1 MHz Tone Spacing
38
0
1
2
3
VCC, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
4
MMG3014NT1
4
RF Device Data
Freescale Semiconductor
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS
42
40
f = 900 MHz
1 MHz Tone Spacing
38
4.5
4.7
4.9
5.1
5.3
5.5
VCC, COLLECTOR VOLTAGE (V)
42
40
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
38
−40
−20
40
60
80
100
Figure 9. Third Order Output Intercept Point
versus Case Temperature
105
−30
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
20
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
MTTF (YEARS)
−40
−50
−60
−70
103
10
13
16
19
22
120
25
125
130
135
140
145
Pout, OUTPUT POWER (dBm)
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Third Order Intermodulation versus
Output Power
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 135 mA
8
6
4
2
VCC = 5 Vdc
ICC = 135 mA
0
1
2
3
4
150
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
10
0
104
VCC = 5 Vdc
ICC = 135 mA
f = 900 MHz
1 MHz Tone Spacing
−80
NF, NOISE FIGURE (dB)
0
−20
−30
VCC = 5 Vdc, ICC = 135 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
−40
−50
−60
−70
10
13
16
19
22
f, FREQUENCY (GHz)
Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent
Channel Power Ratio versus Output Power
25
MMG3014NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 800 - 1000 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
RF
OUTPUT
DUT
Z1
Z2
Z3
Z4
Z5
C5
Z7
Z8
C2
VCC
C1
Z1, Z8
Z2, Z7
Z3
Z4
Z6
C6
0.274″
0.073″
0.066″
0.509″
x 0.058″
x 0.058″
x 0.058″
x 0.058″
C7
Microstrip
Microstrip
Microstrip
Microstrip
Z5
Z6
PCB
0.172″ x 0.058″ Microstrip
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30
S21
20
R1
S21, S11, S22 (dB)
10
0
C1
S11
−10
C4
C3
C6
L1
C2
C5
C7
−20
S22
−30
−40
700
800
VCC = 5 Vdc
ICC = 135 mA
900
1000
MMG30XX
Rev 2
1100
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
220 pF Chip Capacitors
C0805C221J5GAC
Kemet
C3
0.1 μF Chip Capacitor
C0603C104J5RAC
Kemet
C4
2.2 μF Chip Capacitor
C0805C225J4RAC
Kemet
C5
0.2 pF Chip Capacitor
12065J0R2BS
AVX
C6
4.7 pF Chip Capacitor
C0603C479J5GAC
Kemet
C7
1.8 pF Chip Capacitor
C0603C189J5GAC
Kemet
L1
10 nH Chip Inductor
HK160810NJ - T
Taiyo Yuden
R1
0 Ω Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3014NT1
6
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 1800 - 2200 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
DUT
Z1
Z2
Z3
Z4
Z5
Z6
C2
VCC
C1
C5
Z1, Z7
Z2
Z3
Z4
0.347″
0.399″
0.176″
0.172″
Z7
RF
OUTPUT
C6
x 0.058″
x 0.058″
x 0.058″
x 0.058″
Microstrip
Microstrip
Microstrip
Microstrip
Z5
Z6
PCB
0.162″ x 0.058″ Microstrip
0.241″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
20
S21
R1
S21, S11, S22 (dB)
10
C1
0
C4
C3
C5
C2
L1
S11
−10
C6
VCC = 5 Vdc
ICC = 135 mA
−20
1600
S22
2000
1800
2200
MMG30XX
Rev 2
2400
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
22 pF Chip Capacitors
C0805C220J5GAC
Kemet
C3
0.1 μF Chip Capacitor
C0603C104J5RAC
Kemet
C4
2.2 μF Chip Capacitor
C0805C225J4RAC
Kemet
C5
1.5 pF Chip Capacitor
C0603C159J5RAC
Kemet
C6
1.1 pF Chip Capacitor
C0603C119J5GAC
Kemet
L1
15 nH Chip Inductor
HK160815NJ - T
Taiyo Yuden
R1
0 Ω Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3014NT1
RF Device Data
Freescale Semiconductor
7
50 OHM APPLICATION CIRCUIT: 2300 - 2700 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
Z2
Z3
Z4
Z5
x 0.058″
x 0.058″
x 0.058″
x 0.058″
Z7
C2
C5
0.347″
0.488″
0.087″
0.136″
Z6
VCC
C1
Z1, Z7
Z2
Z3
Z4
RF
OUTPUT
DUT
C6
Microstrip
Microstrip
Microstrip
Microstrip
Z5
Z6
PCB
0.036″ x 0.058″ Microstrip
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 20. 50 Ohm Test Circuit Schematic
20
S21
S21, S11, S22 (dB)
10
R1
C4
C3
0
C1
L1
S11
−10
C2
C5
C6
−20
VCC = 5 Vdc
ICC = 135 mA
−30
2100
2300
S22
2500
MMG30XX
Rev 2
2700
2900
f, FREQUENCY (MHz)
Figure 21. S21, S11 and S22 versus Frequency
Figure 22. 50 Ohm Test Circuit Component Layout
Table 10. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
22 pF Chip Capacitors
C0805C220J5GAC
Kemet
C3
0.1 μF Chip Capacitor
C0603C104J5RAC
Kemet
C4
2.2 μF Chip Capacitor
C0805C225J4RAC
Kemet
C5, C6
1.1 pF Chip Capacitors
C0603C119J5GAC
Kemet
L1
15 nH Chip Inductor
HK160815NJ - T
Taiyo Yuden
R1
0 Ω Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3014NT1
8
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 3400 - 3600 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
RF
OUTPUT
DUT
Z1
Z2
Z3
Z4
Z5
Z7
C5
0.347″
0.068″
0.419″
0.088″
C6
x 0.058″
x 0.058″
x 0.058″
x 0.058″
Z8
C2
VCC
C1
Z1, Z8
Z2
Z3
Z4, Z5
Z6
C7
Microstrip
Microstrip
Microstrip
Microstrip
Z6
Z7
PCB
0.084″ x 0.058″ Microstrip
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 23. 50 Ohm Test Circuit Schematic
20
S21
S21, S11, S22 (dB)
10
R1
C4
C3
0
C1
S11
C5
C2
L1
C6
−10
C7
S22
−20
VCC = 5 Vdc
ICC = 135 mA
−30
3400
MMG30XX
Rev 2
3450
3550
3500
3600
f, FREQUENCY (MHz)
Figure 24. S21, S11 and S22 versus Frequency
Figure 25. 50 Ohm Test Circuit Component Layout
Table 11. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
3.3 pF Chip Capacitor
C0805C339J5GAC
Kemet
C2
2.0 pF Chip Capacitor
C0805C209J5GAC
Kemet
C3
0.1 μF Chip Capacitor
C0603C104J5RAC
Kemet
C4
2.2 μF Chip Capacitor
C0805C225J4RAC
Kemet
C5
0.6 pF Chip Capacitor
06035J0R6BS
AVX
C6
0.9 pF Chip Capacitor
06035J0R9BS
AVX
C7
0.8 pF Chip Capacitor
06035J0R8BS
AVX
L1
56 nH Chip Inductor
HK160856NJ - T
Taiyo Yuden
R1
0 Ω Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3014NT1
RF Device Data
Freescale Semiconductor
9
50 OHM TYPICAL CHARACTERISTICS
Table 12. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 135 mA, TC = 25°C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.653
176.4
13.109
160.2
0.0309
1.8
0.435
- 170.7
150
0.650
175.5
12.721
156.3
0.0311
1.4
0.445
- 171.0
200
0.648
174.9
12.320
152.2
0.0312
0.9
0.450
- 171.5
250
0.643
174.1
11.911
148.2
0.0313
0.5
0.457
- 172.2
300
0.642
173.3
11.504
144.3
0.0314
0.1
0.464
- 172.9
350
0.639
172.4
11.094
140.4
0.0316
- 0.2
0.470
- 173.6
400
0.636
171.6
10.690
136.4
0.0317
- 0.6
0.478
- 174.3
450
0.635
170.9
10.276
132.6
0.0318
- 0.9
0.484
- 175.1
500
0.631
170.1
9.860
128.7
0.0319
- 1.1
0.491
- 175.7
550
0.630
169.4
9.450
125.0
0.0319
- 1.4
0.498
- 176.5
600
0.628
168.6
9.051
121.5
0.0320
- 1.5
0.503
- 177.4
650
0.628
167.8
8.675
118.2
0.0321
- 1.8
0.509
- 178.4
700
0.628
167.1
8.321
115.1
0.0321
- 1.9
0.513
- 179.3
750
0.629
166.7
7.989
112.2
0.0322
- 2.1
0.516
179.4
800
0.632
166.1
7.658
109.5
0.0321
- 2.3
0.521
178.1
850
0.633
165.4
7.355
106.9
0.0322
- 2.4
0.525
177.1
900
0.634
164.6
7.079
104.5
0.0323
- 2.6
0.529
176.4
950
0.638
163.9
6.813
102.2
0.0322
- 2.6
0.531
175.3
1000
0.639
163.2
6.570
100.0
0.0323
- 2.7
0.535
174.5
1050
0.641
164.4
6.349
97.9
0.0323
- 2.9
0.536
171.7
1100
0.642
163.6
6.157
95.8
0.0326
- 3.0
0.537
171.0
1150
0.644
162.8
5.976
93.7
0.0327
- 3.2
0.538
170.2
1200
0.645
162.0
5.805
91.8
0.0329
- 3.4
0.539
169.3
1250
0.647
161.0
5.635
89.8
0.0330
- 3.7
0.539
168.5
1300
0.648
160.1
5.476
87.9
0.0331
- 3.9
0.540
167.4
1350
0.649
159.4
5.326
86.1
0.0333
- 4.1
0.541
166.6
1400
0.651
158.5
5.184
84.4
0.0334
- 4.3
0.542
165.7
1450
0.656
157.8
5.054
82.7
0.0335
- 4.5
0.543
164.7
1500
0.658
157.0
4.924
81.0
0.0337
- 4.7
0.544
163.9
1550
0.661
156.3
4.801
79.4
0.0338
- 4.9
0.545
162.9
1600
0.664
155.5
4.687
77.8
0.0339
- 5.1
0.546
162.1
1650
0.666
154.7
4.573
76.3
0.0340
- 5.3
0.546
161.1
1700
0.670
154.0
4.468
74.7
0.0341
- 5.5
0.547
160.3
1750
0.674
153.2
4.368
73.2
0.0343
- 5.7
0.548
159.4
1800
0.677
152.5
4.269
71.7
0.0344
- 6.0
0.549
158.5
1850
0.681
151.8
4.176
70.1
0.0345
- 6.3
0.550
157.4
1900
0.684
150.9
4.084
68.6
0.0346
- 6.5
0.551
156.4
1950
0.688
150.2
3.999
67.1
0.0347
- 6.8
0.552
155.4
2000
0.691
149.3
3.914
65.6
0.0348
- 7.2
0.553
154.4
2050
0.696
148.5
3.837
64.2
0.0349
- 7.5
0.553
153.5
2100
0.699
147.7
3.761
62.7
0.0350
- 7.8
0.553
152.5
2150
0.703
146.8
3.690
61.2
0.0351
- 8.2
0.553
151.5
2200
0.707
146.0
3.624
59.6
0.0352
- 8.6
0.553
150.6
2250
0.709
145.0
3.555
58.1
0.0353
- 9.2
0.554
149.6
2300
0.714
144.0
3.492
56.5
0.0355
- 9.6
0.554
148.5
(continued)
MMG3014NT1
10
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 12. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 135 mA, TC = 25°C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2350
0.716
142.9
3.430
54.9
0.0356
- 10.1
0.554
147.5
2400
0.720
141.8
3.364
53.3
0.0356
- 10.7
0.554
146.3
2450
0.724
140.7
3.305
51.7
0.0358
- 11.3
0.554
145.1
2500
0.727
139.5
3.244
50.1
0.0359
- 11.9
0.555
144.0
2550
0.732
138.4
3.184
48.6
0.0359
- 12.4
0.555
142.8
2600
0.734
137.2
3.129
47.0
0.0360
- 13.0
0.555
141.8
2650
0.736
135.9
3.070
45.4
0.0360
- 13.5
0.555
140.7
2700
0.739
134.6
3.017
43.9
0.0362
- 14.1
0.555
139.8
2750
0.742
133.3
2.965
42.4
0.0362
- 14.5
0.556
139.1
2800
0.745
132.0
2.913
40.9
0.0362
- 15.1
0.556
138.2
2850
0.749
130.7
2.866
39.4
0.0364
- 15.6
0.556
137.5
2900
0.753
129.5
2.818
38.0
0.0364
- 16.2
0.556
136.5
2950
0.756
128.2
2.771
36.5
0.0365
- 16.8
0.556
135.7
3000
0.759
126.9
2.728
35.0
0.0367
- 17.3
0.557
134.8
3050
0.761
125.6
2.682
33.6
0.0367
- 18.0
0.557
133.9
3100
0.764
124.3
2.639
32.2
0.0368
- 18.4
0.557
133.1
3150
0.767
123.1
2.599
30.9
0.0368
- 19.0
0.557
132.3
3200
0.770
121.8
2.559
29.5
0.0369
- 19.5
0.557
131.7
3250
0.773
120.8
2.522
28.2
0.0370
- 19.9
0.557
130.9
3300
0.777
119.7
2.487
26.9
0.0372
- 20.5
0.558
130.3
3350
0.779
118.7
2.451
25.6
0.0372
- 20.9
0.558
129.7
3400
0.783
117.8
2.421
24.4
0.0374
- 21.4
0.558
129.1
3450
0.785
116.9
2.387
23.1
0.0374
- 21.8
0.558
128.4
3500
0.788
116.0
2.358
21.9
0.0376
- 22.4
0.558
127.7
3550
0.792
115.2
2.329
20.7
0.0378
- 22.7
0.559
127.1
3600
0.793
114.4
2.298
19.5
0.0379
- 23.2
0.559
126.2
3650
0.797
113.6
2.273
18.3
0.0381
- 23.6
0.559
125.4
3700
0.797
112.8
2.244
17.1
0.0382
- 24.1
0.559
124.5
3750
0.800
112.0
2.219
15.9
0.0383
- 24.6
0.559
123.7
3800
0.800
111.2
2.193
14.8
0.0384
- 24.9
0.560
122.9
3850
0.799
110.3
2.167
13.7
0.0385
- 25.4
0.560
122.3
3900
0.800
109.3
2.146
12.5
0.0387
- 25.8
0.560
121.9
3950
0.800
108.4
2.125
11.4
0.0389
- 26.2
0.560
121.3
4000
0.802
107.0
2.092
10.3
0.0388
- 26.6
0.560
120.8
MMG3014NT1
RF Device Data
Freescale Semiconductor
11
1.7
7.62
0.305 diameter
2.49
3.48
5.33
2.54
1.27
1.27
0.58
0.86
0.64
3.86
Recommended Solder Stencil
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 26. Recommended Mounting Configuration
MMG3014NT1
12
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MMG3014NT1
RF Device Data
Freescale Semiconductor
13
MMG3014NT1
14
RF Device Data
Freescale Semiconductor
MMG3014NT1
RF Device Data
Freescale Semiconductor
15
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Apr. 2008
Description
• Initial Release of Data Sheet
MMG3014NT1
16
RF Device Data
Freescale Semiconductor
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MMG3014NT1
Document
Number:
RF
Device
Data MMG3014NT1
Rev. 0, 4/2008
Freescale
Semiconductor
17